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ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
ISL9R1560G2, ISL9R1560P2,
ISL9R1560S2, ISL9R1560S3S
15 A, 600 V, STEALTHTM Diode
Features
Applications
•SMPS
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter RatingsUnit
VRRM Repetitive Peak Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified F orward Current (TC = 145oC) 15 A
IFRM Repetitive Peak Sur ge Current (20kHz Square Wave ) 30 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 200 A
K
A
CATHODE
(FLANGE) CATHODE
ANODE
JEDEC STYLE TO-262(I2-PAK)
JEDEC TO-220AC-2L
CATHODE
(FLANGE)
ANODE
N/C
CATHODE
(FLANGE)
CATHODE
ANODE JEDEC TO-263AB(D2-PAK)
CATHODE
(BOTTOM SIDE
CATHODE
ANODE
METAL)
JEDEC STYLE TO-247-2L
Package Symbol
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2,
ISL9R1560S3S is a STEALTH™ diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH™ family exhibits low reverse recovery current
(Irr) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or
boost diode in power supplies and other power switching
applications. The low Irr and short ta phase reduce loss in
switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may be
operated without the use of additional snubber circuitry.
Consider using the STEALTH™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
•Stealth Recovery trr = 29.4 ns (@ IF = 15 A)
• Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
•600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com1
Description
November 2013
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unl e ss ot he rwise noted
Off State Characteristics
On State Charac t eris ti cs
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
PDPower Dissipation 150 W
EAVL Avalanche Energy (1 A, 40 mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Te mperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260 °C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Symbol P arameter Test Conditions Min Typ Max Unit
IRInstantaneous Reverse Current VR = 600 VTC = 25°C - - 100 µA
TC = 125°C--1.0mA
VFInstantaneous Forward Voltage IF = 15 ATC = 25°C-1.82.2V
TC = 125°C - 1.65 2.0 V
CJJunction Capacitance VR = 10 V, IF = 0 A- 62 - pF
trr Reverse Recovery Time IF = 1 A, diF/dt = 100 A/µs, VR = 30 V- 25 30 ns
IF=15 A, diF/dt = 100 A/µs, VR = 30 V- 35 40 ns
trr Reverse Recovery Time IF = 15 A,
diF/dt = 200 A/µs,
VR = 390 V, TC = 25°C
- 29.4 - ns
Irr Reverse Recovery Current - 3.5 - A
Qrr Reverse Recovered Charge - 57 - nC
trr Reverse Recovery Time IF = 15 A,
diF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
-90-ns
S Softness Factor (tb/ta)-2.0-
Reverse Recovery Current - 5.0 - A
Reverse Recovered Charge - 275 - nC
trr Reverse Recovery Time IF = 15 A,
diF/dt = 800 A/µs,
VR = 390 V,
TC = 125°C
-52-ns
S Softness Factor (tb/ta) - 1.36 -
Reverse Recovery Current - 13.5 - A
Reverse Recovered Charge - 390 - nC
diM/dt Maximum di/dt during tb- 800 - A/µs
RθJC Thermal Resistance Junction to Case - - 1.0 °C/W
RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 - - 62 °C/W
Symbol Parameter RatingsUnit
Irr
Qrr
Irr
Qrr
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
2
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
ISL9R1560G2 ISL9R1560G2 TO-247-2L Tube N/A N/A 30
ISL9R1560P2 ISL9R1560P2 TO-220AC-2L Tube N/A N/A 50
ISL9R1560S2 ISL9R1560S2 TO-262(I2-PAK) Tube N/A N/A 50
ISL9R1560S3ST ISL9R1560S3S TO-263(D2-PAK) Reel 13" dia 24mm 800
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. ta and tb Curves vs diF/dt
Figure 5. Maximum Reverse Recovery Current
vs Forward Current Figure 6. Maximum Reverse Recovery Current
vs diF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
30
25
20
00.5 1.0 1.25 2.0 2.25
175oC
25oC
100oC
125oC
150oC
15
10
5
0.75 1.5 1.75
10
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
100
100 200 500 600400
1000
1
0.1
175oC
25oC
100oC
300
4000
75oC
150oC
125oC
IF, FORWARD CURRENT (A)
0
0
20
40
60
80
100
10 30
t, RECOVERY TIMES (ns)
tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs
VR = 390V, TJ = 125°C
5152025
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
0
20
40
60
80
100
t, RECOVERY TIMES (ns)
VR = 390V, TJ = 125°C
t
b
AT I
F
= 30A, 15A, 7.5A
1000 16001400400200 600 800 1200
ta AT IF = 30A, 15A, 7.5A
IF, FORWARD CURRENT (A)
2
6
8
10
12
14
16
Irr, MAX REVERSE RECOVERY CURRENT (A)
diF/dt = 800A/µs
diF/dt = 500A/µs
diF/dt = 200A/µs
VR = 390V, TJ = 125°C
010 305 152025
4
diF/dt, CURRENT RATE OF CHANGE (A/µs)
0
5
10
15
20
25
1000 1600
VR = 390V, TJ = 125°C
I
F
= 30A
I
F
= 7.5A
I
F
= 15A
1400400200 600 800 1200
Irr, MAX REVERSE RECOVERY CURRENT (A)
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
3
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
Figure 7. Reverse Recovery Softness Factor
vs diF/dt
Figure 9. Junction Capacitance
vs Reverse Voltage Figure 10. DC Current Derating Curve
Figure 11. Normaliz ed Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
diF/dt, CURRENT RATE OF CHANGE (A/µs)
0.5
1.0
1.5
2.0
2.5
V
R
= 390V, T
J
= 125°C
I
F
= 30A
IF = 15A
I
F
= 7.5A
S, REVERS E RECOVERY SOFTNESS FACTOR
1000 16001400400200 600 800 1200 200
300
400
500
600
700 VR = 390V, TJ = 125°C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
QRR, REVERSE RECOVERED CHARGE (nC)
1000 16001400400200 600 800 1200
400
0
800
600
200
1200
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0.1 1 10010
1000
4
0150 155 165140 175160
12
14
16
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
170145
2
10
6
8
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01 10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
4
Figure 7. Reverse Recovered Charge vs diF/dt
diF/dt, CURRENT RATE OF CHANGE (A/µs)
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Ava lan che Cur rent and Voltage
Waveforms
Typical Performance Curves (Continued)
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTRO L IF
RG CONTROL dIF/dt
+
-
dt
diF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
V
DD
= 50V
IV
t0t1t2
IL
VAVL
t
IL
Test Circuit and Waveforms
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
5
6www.fairchildsemi.com
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
Mechanical Dimensions
Figure 16. TO-247 2L - TO247,MOLDED,2LD, JEDEC OPTION AB
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a F airchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002.
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
www.fairchildsemi.com
7
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
Mechanical Dimensions
Figure 17. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a F airchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2.
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
8www.fairchildsemi.com
Mechanical Dimensions
Figure 18. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a F airchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002.
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
9www.fairchildsemi.com
Mechanical Dimensions
Figure 19. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or da te on the d rawing and contact a Fairchild Semicondu ctor re presentative to verify o r
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’ s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002.
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S — STEALTH™ Diode
www.fairchildsemi.com
10
©2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
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The following includes re gistered and unregistere d trademarks and service marks, owned by Fairchild S emiconductor and/or its global subsidiar ies, and is not
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Definition of Terms
AccuPower™
AX-CAP®*
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Build it Now™
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®*
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TRUECURRENT®*
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UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
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