MCH3456
No.8162-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8162A
MCH3456 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 15 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID1.8 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 7.2 A
Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 15 V
Zero-Gate Voltage Drain Current IDSS VDS=15V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=1A 1.5 2.6 S
RDS(on)1 ID=1A, VGS=4V 120 160 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=0.5A, VGS=2.5V 165 240 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 230 350 mΩ
RDS(on)4 ID=0.1A, VGS=1.5V 310 750 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 105 pF
Output Capacitance Coss VDS=10V, f=1MHz 30 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 24 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7.8 ns
Rise Time trSee specified Test Circuit. 27 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 18 ns
Fall T ime tfSee specified Test Circuit. 22 ns
Marking : LH Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
80906 / 12006PE MS IM TB-00002043 / D1504PE TS IM TB-00000382
MCH3456
No.8162-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=10V, VGS=4V, ID=1.8A 1.86 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=1.8A 0.33 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=1.8A 0.55 nC
Diode Forward Voltage VSD IS=1.8A, VGS=0V 0.88 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm
7019A-003
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65 0.3
0.85
0.15
12
3
0 to 0.02
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=1A
RL=10Ω
VDD=10V
VOUT
MCH3456
VIN
4V
0V
VIN
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS RDS(on) -- Ta
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--60 --40 --20 0 20 40 60 80 100 120 140 160
021346785910
IT08579
0
0
0.4
0.8
1.6
0.2
1.2
0
50
100
150
200
250
300
350
400
0
0.4 0.6 0.80.1 0.3 0.5 0.7
IT08577
0 0.2 0.4 0.6 1.00.8 1.2 1.4 1.6 2.01.8
IT08578
IT08580
50
100
150
200
250
300
350
400
0
ID=1.0A, VGS=4.0V
ID=0.5A, VGS=2.5V
ID=0.1A, VGS=1.8V
8.0V
VDS=10V
--25
°
C
Ta=75
°
C
Ta= --25
°C
ID=0.1A 1.0A
Ta=25°C
25°C
75°C
25°C
6.0V 4.0V
3.0V
2.5V
1.5V
2.0V
VGS=1.0V
0.5A
MCH3456
No.8162-3/4
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
y
fs-- ID
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
0 0.4 0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IT08585
0.01 0.1 1.0
23 57 23 2357
10
7
5
3
2
100
7
5
3
2
3
2
1.0
VDD=10V
VGS=4V
td(on)
td(off)
tr
tf
IT08583
IT08581
0.01 0.1
23 57 2 2357
1.0 3
1.0
0.1
7
5
3
2
7
5
3
2
VDS=10V
75°
C
25
°
C
Ta= --25°
C
IT08582
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.01
0.1
1.0
7
5
3
2
7
5
3
2
3
2VGS=0V
--25
°
C
25°
C
Ta=75
°
C
024 8610121614
10
100
2
7
5
3
2
3
IT08584
Ciss
Coss
Crss
f=1MHz
VDS=10V
ID=1.8A
IT08695
2
3
5
7
2
3
5
7
2
2
3
5
7
10
1.0
0.1
0.01 23 57 23 57 23 57
0.01 0.1 1.0 10 23
IDP=7.2A
ID=1.8A
Operation in this
area is limited by RDS(on).
100ms
100µs
DC operation (Ta=25°C)
1ms
10ms
IT08696
0.2
0.4
0.6
1.0
0.8
00 20 40 60 80 100 120 140 160
Mounted on a ceramic board (900mm2✕0.8mm)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
<10µs
MCH3456
No.8162-4/4
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
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PS
Note on usage : Since the MCH3456 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
This catalog provides information as of January, 2006. Specifications and information herein are subject
to change without notice.