Copyright@DawinElectronics Corp. All right reserved
DB2F150N4S
DBC2F150N4S
Jan. 2007
Ultra-Fast Soft Recovery Diode Module
Description
Ultra-FRD module devices are optimized to reduce losses
and EMI/RFI in high frequency power conditioning electrical systems.
These diode modules are ideally suited for power converters,
motors drives and oth er ap plicatio ns wh ere switching losses
are significant portion of the total losses.
Features
☞Repetitive Reverse Voltage : VRRM = 400V
☞Low Forward Voltage Drop : VF(typ.) = 1.05V
☞Average Forward Current : IF(AV.) = 150A @ Tc = 100℃
☞Ultra-Fast Reverse Recovery Time : trr(typ.) = 100 ns
☞Extensive Characterization of Recov ery Paramete rs
☞Reduced EMI and RFI
☞Isolation Type Package
Applications
Motor Drives, Free wheel use, High Power Converters,Welders,
Various Switching and Telecommunication Power Supply.
Ordering Information
Absolute Maximum Ratings@ Tj=25℃(Per Leg)
Symbol Parameter Ratings UnitConditions
VRRM
VR(DC)
IF(AV)
IFSM
I2t
Tj
Tstg
Visol
Pd
-
-
-
Repetitive Peak Reverse Voltage
Reverse DC Voltage
Average Forward Current @ Tc = 25℃
@ Tc = 100℃
Surge(non-repetitive) Forward
Current
I2t for Fusing
Junction Temperature
Storage Temperatu re
Isolation Voltage
Maximum Power Dissipation
Mounting Torque
Terminal Torque
Weight
Resistive Load
One Half Cycle at 60Hz,
Peak Value
Value for One Cycle Current,
tw= 8.3ms, Tj= 25℃Start
@ AC 1 minutes
Typical Including Screws
400
320
300
150
2750
37.5* 103
-40 ~ 150
-40 ~ 125
2500
550
4.0
3.0
180
V
V
A
A
A
A2s
℃
℃
V
W
N.m
N.m
g
1/4
Device Name DB2F150N4S DBC2F150N4S
Common Side
Optional Information Common Center
Common CenterCommon Side
Equivalent Circuit and Package
Package : 5DM-2 Series
Please see the package Out line information
1 2 3 1 2 3
Copyright@DawinElectronics Corp. All right reserved
DB2F150N4S
DBC2F150N4S
Jan. 2007
Thermal Characteristics
Symbol Parameter Values UnitConditions
Rth(j-c) Thermal Resistance Junction to Case
Min. Typ. Max.
0.23 ℃/W
--
2/4
Electrical Characteristics @ Tj=25℃(unless otherwise specified)
Symbol Parameter Values Unit
Conditions
VR
VFM
IRRM
Trr
Cathode Anode Breakdown
Voltage
Maximum Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
IR= 100uA
IFM = 150A, Tc= 25℃
IFM = 150A, Tc=100℃
TC= 100℃, VRRM applied
IFM = 150A,
VR = 200V
di/dt=-100A/us
Min. Typ. Max.
-
1. 3
1.1
1.5
130
-
V
V
V
mA
ns
ns
400
-
-
-
-
-
-
1.05
0.95
-
100
130
Tc= 25℃
Tc= 100℃
Copyright@DawinElectronics Corp. All right reserved
DB2F150N4S
DBC2F150N4S
Jan. 2007
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Performance Curves
Fig. 3 : Transient Thermal Impedance(Zthjc)
Characteristics
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Rectangul ar Pulse D ur ati on[sec]
Thermal Responce Z thjc[
℃/w]
Fig. 1 : Typi c al Forw ard Volt age Dro p
vs. Instantaneous Forward Current
1
10
100
1000
0.511.52
F orward Voltage Drop VF[ V]
Forw ard Current IF[A]
Fig. 2 : Typical Reverse Recovery Time
vs. -di/dt
75
85
95
105
115
100 1000
di/dt[A/us]
Reverse Recovery Tim e,trr,[ns
0
20
40
60
80
100
120
140
160
60 80 100 120 140 160
Fig. ４: Forward Current Derating Curve
Case Temperature Tc[℃]
Average Forward Current IF(AVG) [A]
DC
P ackage Ou t L ine I n fo rmati on
5DM-2 Series
1
2
3
D W
80±0.3
23±0.5 23±0.5
93±0.3 M6 DP10.5
Φ6. 4 ±0. 2
Moun ting Hole
LABEL PLATE
6.1±0.5
32±0.5
14.5±0.3
35±0.5
5±0.2 18±0.2
1.2±0.05
14±0.2
20±0.2
MAX 31
22±0.5
90±0.5
16±0.5
Dimensions in m m
9.6
9.8±0.2
Bolt Depth
DBC2F150N4S
Jan. 2007
Copyright@Dawin Electronics Corp. All r ight reserved
DB2F150N4S
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