3LP04CH Ordering number : ENA1212 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP04CH General-Purpose Switching Device Applications Features * 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --30 10 V ID --200 mA --800 mA Drain Current (Pulse) IDP PW10s, duty cycle1% Allowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) Channel Temperature Storage Temperature V 0.6 W Tch 150 C Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --30 V VDS=--30V, VGS=0V --1 A 10 A IGSS VGS(off) VGS=8V, VDS=0V VDS=--10V, ID=--100A --0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--100mA 190 ID=--100mA, VGS=--4V 1.8 2.4 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--50mA, VGS=--2.5V 2.4 3.4 ID=--10mA, VGS=--1.5V 4.5 9.0 Cutoff Voltage --1.4 320 V mS Input Capacitance Ciss VDS=--10V, f=1MHz 35 pF Output Capacitance Coss VDS=--10V, f=1MHz 7.2 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 2.1 pF Marking : WA Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52808PE TI IM TC-00001369 No. A1212-1/4 3LP04CH Continued from preceding page. Parameter Symbol Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Ratings Conditions min 75 ns See specified Test Circuit. 170 ns See specified Test Circuit. 550 ns See specified Test Circuit. 350 ns 0.58 nC 0.17 nC Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--4V, ID=--200mA VDS=--10V, VGS=--4V, ID=--200mA VDS=--10V, VGS=--4V, ID=--200mA Diode Forward Voltage VSD IS=--200mA, VGS=0V Package Dimensions 0.12 nC --0.89 --1.2 V Switching Time Test Circuit unit : mm (typ) 7015A-004 VDD= --15V VIN 0V --4V 0.6 2.9 0.15 ID= --100mA RL=150 VOUT VIN 3 D 0.2 PW=10s D.C.1% 1.6 0.05 Rg G 1 0.6 Unit max See specified Test Circuit. Total Gate Charge 2.8 typ 2 0.95 1 : Gate 2 : Source 3 : Drain 3LP04CH P.G 50 S 0.9 0.2 0.4 SANYO : CPH3 5C --8.0 V --100 --80 V VGS= --1.5 --60 --40 25 C Ta= -2 VDS= --10V --200 --150 --100 Ta= 75 C --25 C --120 25 C --2 . --250 --6.0 --140 --2 Drain Current, ID -- mA --160 .0V 5V V --5.0 V --4.0 V --180 ID -- VGS --300 75C ID -- VDS --200 Drain Current, ID -- mA Rg=5k --50 --20 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 --0.5 IT11698 --3.0 IT11699 RDS(on) -- Ta 7 9 Static Drain-to-Source On-State Resistance, RDS(on) -- Static Drain-to-Source On-State Resistance, RDS(on) -- Ta=25C 8 ID= --100mA 7 --50mA 6 --10mA 5 4 3 2 6 , I D= --1.5V V GS= 5 A --10m 4 A --50m V, I D= 3 --2.5 V GS= mA = --100 4.0V, I D -= V GS 2 1 1 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT11700 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT11701 No. A1212-2/4 3LP04CH 2 -25 =- C C 75 Ta 100 7 C 5 2 5 3 3 2 --10 7 5 3 2 2 10 --1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT11702 Drain Current, ID -- mA 0 --0.2 --0.4 --0.6 Ciss, Coss, Crss -- pF tf 3 2 tr --1.4 IT11703 f=1MHz 5 5 --1.2 7 Ciss 1000 7 --1.0 Ciss, Coss, Crss -- VDS 100 VDS= --15V VGS= --4V td (off) --0.8 Diode Forward Voltage, VSD -- V SW Time -- ID 2 Switching Time, SW Time -- ns --100 7 5 --25 C 3 3 2 25C 5 VGS=0V 5C 7 IS -- VSD --1000 7 5 Source Current, IS -- mA Forward Transfer Admittance, yfs -- mS VDS= --10V Ta= 7 yfs -- ID 1000 3 2 10 Coss 7 5 3 100 td(on) Crss 2 7 1.0 5 --10 2 5 3 7 2 --100 5 3 Drain Current, ID -- mA --1.0 7 5 --3.0 --2.5 --2.0 --1.5 --15 --20 --25 3 2 --30 IT11705 ASO 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --200mA --3.5 --5 IT11704 VGS -- Qg --4.0 IDP= --800mA 100s ID= --200mA PW10s DC --0.1 7 5 1m 10 s ms 10 0m s op era tio 3 2 n( Ta = Operation in this area is limited by RDS(on). 25 C ) --0.01 7 5 --1.0 3 2 --0.5 0 0 0.1 0.2 0.3 0.4 0.5 Total Gate Charge, Qg -- nC 0.6 0.7 IT11706 PD -- Ta 0.8 Allowable Power Dissipation, PD -- W 0 7 Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT13693 When mounted on ceramic substrate (900mm20.8mm) 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13694 No. A1212-3/4 3LP04CH Note on usage : Since the 3LP04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2008. Specifications and information herein are subject to change without notice. PS No. A1212-4/4