JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC114TE/DTC114TUA
DTC114TKA/DTC114TCA /DTC114TSA
DIGITAL TR ANSIST OR (NPN)
FEATURES
Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completel y
Eliminating parasitic effects.
Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
(1) Emitter
(2) Collector
(3) Base
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 04
SOT-523
Addreviated symbol:04
SOT-23-3L SOT-23
SOT-323
TO-92S
DTC114TE DTC114TUA
DTA114ECA DTC114TCA DTC114TKA
DTC114TSA
Addreviated symbol: 04
Addreviated symbol: 04
MAXIMUM RATINGS* TA=25 unless otherwise noted
LIMITS(DTC114T)
Symbol Parameter
E UA KA CA SA
Units
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 100 mA
PC Collector Dissipation 150 200 300 mW
Tj Junction temperature 150
TJ, Tstg Junction and St orage Temperature -55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=50µA,IE=0 50 V
Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 50 V
Emitter-base breakdow n voltage V(BR)EBO IE=50µA,IC=0 5 V
Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA
DC current gain hFE VCE=5V,IC=1mA 100 300 600
Collector-emitter saturation voltage VCE(sat) I
C=10mA,IB=1mA 0.3 V
Transition frequency fT VCE=10V,IE=-5mA, f=100MHz 250 MHz
Imput resistor R1 7 10 13
kΩ
Typical Characteristics