NJM2675
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ABSOLUTE MAX IMUM RA TINGS (Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
Maximum Supply V olt age VMM 60 V
Logic Supply Voltage VCC 7 V
Input V olt age Range VIN -0.3 to 7 V
Output Current IOUT 1.5 A
Power dissipation (SOP pa ckage) PD 1.3 (Note1) W
Operating Junction Temperature Topr -40 ∼ 85 °C
S torage Temperature Tstg -55 ∼ 150 °C
Note1 Specified board : EIA / JEDEC specification (76. 2×114.3×h1.6mm, 2-layer , FR4)
RECOMENNDO OPERATING CONDITIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Supply Voltage VMM 4 - 55 V
Logic Voltage Range VCC 4.75 5.00 5.25 V
Maximum Output Current IOUT - - 1.2 A
Operating junction temperature Tj -20 - 125
°C
ELECTRICAL CHARACTERISTIC S
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
GENERAL
Quiescent current Icc Enable=H,IN1=L,IN2=H - 20 - mA
Thermal shut down Ttsd - 170 - °C
Off-State leak curren t Itsd-LEAK TSD ARM=5V - - 50 µA
Thermal alarm outp ut saturation Vtsd Io=5mA - 0.5 0.7 V
Dead time protection Td - 1 - µs
LOGIC
Input LOW volt age ViL - - 0.6 V
Input HIGH volt age ViH 2 - -
V
Input HIGH current IiH Vi=2.4V - -
20 µA
Input LOW current IiL Vi=0.4V -0.4 - - mA
OUTPUT VOU1 Io=1000mA - 1.3 1.5 V
Upper transistor satura tion VOU2 Io=1300mA - 1.5 1.8 V
VOL1 Io=1000mA - 0.5 0.8 V
Lower transistor satura tion VOL2 Io=1300mA - 0.8 1.3 V
VfU1 Io=1000mA - 1.3 1.6 V
Upper diode forward VfU2 Io=1300mA - 1.6 1.9 V
VfL1 Io=1000mA - 1.3 1.6 V
Lower diode forward VfL2 Io=1300mA - 1.6 1.9 V
Output leakage curr ent Lo-LEAK VMM=50V - - 1 mA
Upper diode recoverly time TrrU - 250 - ns
Lower diode recoverly time TrrL - 250 - ns