G B PNEW ENGLAND SEMICONDUCTOR POWER MOSFET NES150/61 N CHANNEL 30 AMPERE REPETITIVE AVALANCHE RATINGS 100 VOLTS LOW Rps(on) 0.055 @ LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (T,. = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL VALUE UNITS Drain-Source Voltage Vos 100 Vv Gate-Source Voltage Vos +20 Vv Continuous Drain Current Te = 25C Ip 30 A Power Dissipation Te = 25C Py 125 WwW Operating Junction & Storage Temperature Range Ty Tote -55 to + 150 C Lead Temperature (1/16" from case for 10 secs.) Ty 300 C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYP. MAX. UNITS Junction-to-Case Raye 1.0 K/W MECHANICAL OUTLINE PIN OUT: 0.090" Ox. PIN 1: SOURCE _ 0.150" PIN 2: GATE [ose PIN 3: DRAIN . -~o] | Rae i. _- o.o7a 0-970" ig ee 206" . - 0.170" 3 meio O34" +] oases [oo | 1 0.42277 0.32571 0.975 | 0.640" 0.687" Pr" 0667" 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-920 REV: -- NES150/61 u B FNEW ENGLAND SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. MAX. | UNITS Drain-Source Breakdown Voltage Vos = OV, Ip = 250 UA Vesrypss 100 V Gate Threshold Voltage Vos = Ves Ip = 250 nA Vsaty 2.0 4.0 Vv Gate-Body Leakage Ves = At Rated Veg less +100 nA Zero Gate Voltage Drain Current Vps = 0.8 max Rating Vos = 0V loss 250 HA Zero Gate Voltage Drain Current Vos = 80% Vegrpss Vos = OV, Ty = 125C Ings 1000 HA Drain-Source On-State Resistance (2) Vos = IOV, Ip = 20A Dston) 0.55 Q Forward Transconductance (2) Vps = 15 V, Ip = 20A (Vps 2 Ineo X Rosro~ Max) Boe 9.0 S(Q) Input Capacitance Vos = OV Ciss 3000 Output Capacitance Vps = 25V Coss 1500 pF Reverse Transfer Capacitance f= 1.0MHz Coss 500 Total Gate Charge Vos = 80 %Veaypss Q, 120 Vos = 10 V, Gate-Source Charge (Gate charge is essentially Qus - nC independent of operating Gate -Drain Charge temperature.) QO - gd Turn-On Delay lime Vag = 24, Ip = 20A, d(on) 35 Rise Time Rg = 4.70 t ns r 100 Turn-Off Delay Time (Switching time is ; d(off) 125 essentially independent of Fall Time operating temperature. ) 'f 100 SOURCE-DRAIN DIODE RATINGS & CHARACTERISTICS (T, = 25C unless otherwise noted) PARAMETERS / TEST CONDITIONS SYMBOL MIN. TYP. MAX | UNITS Continuous Current Is 30 A Forward Voltage (2) Ip = 1s, Ves = OV Vsp 2.5 Vv Reverse Recovery Time I; = Iy, di/dt = 100 A/uS, Vpp = 50 v tr 600 ns Reverse Recovered Charge I, = Ig, di/dt= 100 A/S, Vpp = 50V Qi 3.0 uC (2)Pulse Test: Pulse width < 300 psec. Duty cycel s 2%. 6 Lake Street Lawrence,MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-920 REV: -- NEW ENGLAND SEMICONDUCTOR