6 Lake Street - Lawrence, MA 01841
Applications
Used in general purpose applications,where a low current controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
for problem free solderability
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/337
Available up to JANTXV-1 levels
"S" level screening available to SCDs
Silicon Switching Diode DO-35 Glass Package
1N4153,
1N4153-1
Maximum Ratings Symbol Value Unit
Peak Inverse Voltage PIV 75 (Min.) Volts
Average Rectified Current IAvg 150 mAmps
Continuous Forward Current IFdc 300 mAmps
Peak Surge Current (tpeak = 1 Sec.) Ipeak 0.25 Amp
BKC Power Dissipation TL = 50 oC, L = 3/8" from body Ptot 500 mWatts
Operating and Storage Temperature Range TOp & St -65 to +200 oC
Electrical Characteristics @ 25 oC* Symbol Minimum Maximum Unit
Forward Voltage @ IF = 100 µA VFVf 0.49 0.55 Volts
Forward Voltage @ IF = 250 µA VFVf 0.53 0.59 Volts
Forward Voltage @ IF = 1.0 mA VFVf 0.59 0.67 Volts
Forward Voltage @ IF = 2.0 mAVFVf 0.62 0.70 Volts
Forward Voltage @ IF = 10 mA VF 0.70 0.81 Volts
Forward Voltage @ IF = 20 mA VF 0.74 0.88 Volts
Reverse Leakage Current @ VR = 50 V IR 0.05(50 @ 150 oC) µA
Breakdown Voltage @ IR = 5.0 µA PIV 75 Volts
Capacitance @ VR = 0 V, f = 1mHz CT 2.0 pF
Reverse Recovery Time (note 1) trr 4.0 nSecs
Reverse Recovery Time (note 2) trr 2.0 nSec
Note 1: Per Method 4031-A with IF = IR = 10 mA, RL = 100 Ohms, C = 3 Pf. *Unless Otherwise Specified
Note2: Per Method 4031-A with IF = IR = 10 mA, Rr = 6 Volts, Rl=100 ohms.
DO-35 Glass Package
Dia.
0.06-0.09"
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
