BYS11-90-M3
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Reivision: 09-Dec-13 1Document Number: 89409
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, oring diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 90 V
IFSM 40 A
VF0.75 V
TJ max. 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS11-90 UNIT
Device marking code BYS109
Maximum repetitive peak reverse voltage VRRM 90 V
Maximum average forward rectified current IF(AV) 1.5 A
Peak forward surge current single half sine-wave
superimposed on rated load
8.3 ms IFSM
40 A
10 ms 30
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Junction and storage temperature range TJ, TSTG -55 to +150 °C
BYS11-90-M3
www.vishay.com Vishay General Semiconductor
Reivision: 09-Dec-13 2Document Number: 89409
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYS11-90 UNIT
Maximum instantaneous forward voltage 1.0 A VF (1) 750 mV
Maximum DC reverse current VRRM
TJ = 25 °C IR (1) 100 μA
TJ = 100 °C 1 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYS11-90 UNIT
Maximum thermal resistance, junction to lead RJL 25 °C/W
Maximum thermal resistance, junction to ambient
RJA (1) 150
°C/WRJA (2) 125
RJA (3) 100
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYS11-90-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel
BYS11-90-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel
10
1
0.1
0.01
0.001
TJ = 150 °C
TJ = 25 °C
00.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Forward Voltage (V)
Forward Current (A)
0 40 80 120 160 200
2.0
1.6
1.2
0.8
0.4
0
VR = VRRM, Half Sine-Wave, RthJA = 25 K/W
Ambient Temperature (°C)
Average Forward Current (A)
BYS11-90-M3
www.vishay.com Vishay General Semiconductor
Reivision: 09-Dec-13 3Document Number: 89409
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
VR = 0 V, Half Sine-Wave
RthJA = 25 K/W
100 K/W
125 K/W
150 K/W
0 40 80 120 160 200
2.0
1.6
1.2
0.8
0.4
0
Ambient Temperature (°C)
Average Forward Current (A)
V
R
= V
RRM
0 40 80 120 160 200
1000
100
10
1
0.1
Junction Temperature (°C)
Reverse Current (mA)
RthJA = 25 K/W
100 K/W
VR = VRRM
0 40 80 120 100 200
2.0
1.6
1.2
0.8
0.4
0
Max. Reverse Power Dissipation (W)
Junction Temperature (°C)
f = 1 MHz
0.1 1 10 100
Reverse Voltage (V)
180
160
140
120
100
80
60
40
20
0
Diode Capacitance (pF)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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Revision: 08-Feb-17 1Document Number: 91000
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