Intemational Rectifier PD-9.756 IRFP264 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low Voss = 250V Rosvon) = 0.0750 s Ip = 38A on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC Absolute Maximum Ratings Parameter Max | Units Ip @ Te = 25C Continuous Drain Current, Vag @ 10 V 38 Ip @ Te = 100C | Continuous Drain Current, Vas @ 10 V 24 A lom Pulsed Drain Current 150 Pp @ Tc = 25C | Power Dissipation 280 Ww Linear Derating Factor 2.2 wre Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 1000 mJ lar Avalanche Current 38 A Ear Repetitive Avalanche Energy 28 mJ dv/dt Peak Diode Recovery dv/dt 48 , Vins Ty Operating Junction and -55 to +150 | Tsta Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) , Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) | Thermal Resistance ee sPraatrameter _ Min. Typ. Max. Units Rec Junction-to-Case _ 0.45 | Rocs Case-to-Sink, Flat, Greased Surface 0.24 C/W [Ran ____| Junetion-to-Ambient = 40 983IRFP264 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Ver)pss Drain-to-Source Breakdown Voltage 250 | _ V__ | Ves=0V, Ip= 250nA AV(aryoss/ATy) Breakdown Voltage Temp. Coefficient | 0.37 | | VPC | Reference to 25C, Ip= 1mA Rosvon) Static Drain-to-Source On-Resistance _ -- |0.075; Q | Vas=10V, IpD=23A Vasith) Gate Threshold Voltage 2.0 _ 4.0 V_ | Vos=Ves, Ip= 250nA ts Forward Transconductance 20 _ _ S| Vos=50V, Ip=23A Ipss Drain-to-Source Leakage Current =| | 25 pA Vos=250V, VasrOV 250 Vps=200V, Vas=0V, Ty=125C less Gate-to-Source Forward Leakage | => 100 na Vas=20V Gate-to-Source Reverse Leakage ~ | -100 Ves=-20V Qg Total Gate Charge = = | 210 Ip=38A Qgs Gate-to-Source Charge _ _ 35 | NC | Vog=200V Qoa Gate-to-Drain ("Miller") Charge _ = 98 Vas=10V See Fig. 6 and 13 @ ta(on) Turn-On Delay Time _ 22 _ Vpp=125V ty Rise Time = 99 _ ns Ip=38A tayotty Turn-Off Delay Time ; 110 | Re=4.3Q tt Fall Time _ 92 Ro=3.2Q See Figure 10 @ Lo Internal Drain Inductance _ 5.0 _ Somme al nH | from package (le: | Ls Internal Source Inductance _ 13 _ and center of die contact 8 Ciss Input Capacitance | 5400) Vas=0V Coss Output Capacitance | 870 | PF | Vps= 25V Crss Reverse Transfer Capacitance _~ 150 _ f=1.0MHz: See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 38 : MOSFET symbol o (Body Diode) A showing the Ism Pulsed Source Current _ | 480 integral reverse @ (Body Diode) p-n junction diode. 8 Vsp Diode Forward Voltage _ 1.8 V__ | Ty=25C, Is=38A, Vas=0V tir Reverse Recovery Time {| 410 | 620 | ns_ | Ty=25C, IF=38A Qn Reverse Recovery Charge 5.7 | 86 | uC | di/dt=100A/is @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: . Repetitive rating; pulse width limited by Isp<38A, di/dts210A/us, Vpps<ViBR)pss, max. junction temperature (See Figure 11) Tys150C Vpp=50V, starting Ty=25C, L=1.14mH @ Pulse width < 300 ys; duty cycle <2%. RG=250, las=38A (See Figure 12) 984IRFP264 @ @ 2. a E E = < = = @ 5 5 3 3 = 10! & 104 s a a 2 2 20us PULSE WIOTH 20us PULSE WIDTH To = 250 Te = 180C sgt so! tort 409 10! Vps, Drain-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, Tco=25C To=150C 150C 250 Ip, Drain Current (Amps) Rps(on), Drain-to-Source On Resistance (Normalized) Vps = 50V 20us PULSE WIDTH 00 Ves = 10V 4 5 6 7 4 9 10 60 -40 -20 0 20 40 60 80 100 120 440 160 Vas, Gate-to-Source Voltage (volts) Ty, Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 985IRFP264 12000 Capacitance (pF) Ves, Gate-to-Source Voltage (volts) SEE FIGURE 13 ooo 401 % 50 100 450 200 250 Vos, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY Fos (ON) Ip, Drain Current (Amps) T Isp, Reverse Drain Current (Amps) Tyg=1509C Veg = OV SINGLE 0.0 0.5 1.0 1.5 2.0 4 2 5 49 2 5 492 2 5 493 Vsp, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 986Ip, Drain Current (Amps) 26 50 IRFP264 Vos > + ~Vbo Jhiov Pulse Width < 1ps Duty Factor < 0.1% 75 100 125 4150 Tc, Case Temperature (C) tdon) ty tacotty tf Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature Thermal Response (Zg jc) Fig 11. Oo. 10 SINGLE PULSE (THERMAL RESPONSE) Po retell NOTES: 4. DUTY FACTOR, D=t1/t2 2. PEAK Ty=Ppy x Ztnjc + Te 10 to 10-4 103 10? 0.4 4 10 t;, Rectangular Pulse Duration (seconds) Maximum Effective Transient Thermal Impedance, Junction-to-Case 987IRFP264 Vary tp to obtain Vos> required las Ip TOP 17h 248 BOTTOM 36A 0.010, be eB Eas, Single Pulse Energy (mJ) Dp = 50V Vos 25 50 75 100 125 150 Starting Tj, Junction Temperature(C) As TTF Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator r Ip Ig Charge + Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1511 Appendix C: Part Marking Information See page 1517 International Rectifier 988