SD1020CS – SD10100CS 1 of 3 © 2002 Won-Top Electronics
SD1020CS – SD10100CS
10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip A C
! Guard Ring Die Construction for B J
Transient Protection D
! High Current Capability
! Low Power Loss, High Eff icienc y
! High Surge Current Capability E
! For Use in Low Voltage, High Frequency K
Inverters, Free Wheeling, and Polarity G
Protection Applications H
L
P P
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD- 750, Met hod 2026
! Polarity: Cathode Band PIN 1 - +
! Weight: 0.4 grams (approx.) PIN 3 - Case PIN 2
! Mounting Position: Any Potive CT
! Marking: Type Number
! Standard Packaging: 16mm Tape (EIA-481)
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol SD
1020CS SD
1030CS SD
1040CS SD
1050CS SD
1060CS SD
1080CS SD
10100CS Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR20 30 40 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V
Average Rectified Output Current @TL = 100°C IO10 A
Non-Repetiti ve P eak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 100 A
Forward Voltage (Note 1) @IF = 5.0A VFM 0.55 0.75 0.85 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 0.2
50 mA
Typic al Junction Capacitance (Note 2) Cj600 pF
Typic al Therm al Resistance Junction to Ambient RJA 60 K/W
Operating Temperature Range Tj-50 to +125 °C
Storage Temperature Range TSTG -50 to +150 °C
Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
D PAK/TO-252AA
Dim Min Max
A6.4 6.8
B5.0 5.4
C2.35 2.75
D—1.60
E5.3 5.7
G2.3 2.7
H0.4 0.8
J0.4 0.6
K0.3 0.7
L0.50 Typi cal
P—2.3
All Dimensions in mm
PIN 1 2 3