a fF ~ oF gg TOT MA46600 Series GaAs Tuning Varactors 276 Description The MA46600 series of microwave tuning varactors is a family of abrupt junction gallium arsenide devices featuring Q factors in excess of 8000. This series is specifically designed for broadband high Q tuning performance (up to 8000 at -4 volts and 50 MHz) from L through Ka band. Characteristics such as high reliability, low leakage and close capacitance tracking between diodes are typical of these devices. Standard capacitance matching is + 10%, but closer matching is available upon request. All diode types are available in a wide selection of ceramic packages as well as in chip form. The series is available in minimum breakdown voltage ranges of 30 volts and 45 volts. Features H HIGHEST Q lm LARGE CAPACITANCE VARIATION WITH VOLTAGE (ABRUPT JUNCTION) @ CUSTOM TAILORED DESIGNS AVAILABLE ON REQUEST Applications. The MA46600 series of tuning varactors can be used for both broad and narrow band tuning through Ka-band. Typical applications include solid state tuning of VCOs using transistors, Gunns or IMPATTs, as well as voltage tunable filters and amplifier circuits. The GaAs abrupt junction tuning varactors offer the highest Q of any tuning varactors and are utilized in high frequency applications where Q is premium. M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 5-33M/A-COM SEMICOND.BRLNGTON 5-34 RE or pee eee MA46600 Series GaAs Tuning Varactors Specifications @ Ta = 25C 11D MM Sb42224 GOOL235 4 mEMIC Fog! t Voltage Ratiot3 Model Breakdown Cuts Q@ -4 Volts? Cro/C,VB (pF) Number (Volts) + 10% (pF) Minimum (Typical) MA46600 30 0.3 8000 1.9 MA46601 30 0.4 7500 2.1 MA46602 30 05 . 7000 2.5 MA46603 30 0.6 6500 2.8 MA46604 30 0.8 6000 3.2 MA46605 30 1.0 5700 3.4 MA46606 30 1.2 5300 3.6 MA46607 30 1.5 5000 3.8 MA46608 30 1.8 4500 3.9 MA46609 30 2.2 4000 4.0 MA46610 45 0.5 6000 2.7 MA46611 45 0.6 500 3.1 MA46612 45 0.8 5000 3.6 MA46613 45 1.0 4600 3.9 MA46614 45 1.2 4300 4.2 MA46615 45 1.5 4000 4.5 MA46616 45 1.8 3800 4.7 MA46617 45 2.2 3600 4.9 MA46618 45 2.7 3300 5.1 MA46619 45 3.3 3000 5.3 NOTES 1, Capacitance is measured at 1 MHz on a bridge which has been balanced with shielded test holders connected in place but open circuited. 2. Diode Q Is measured by the DeLoach technique and extrapolated to ~4 voits and 60 MHz. 3. All GaAs tuning varactors are available in any case style shown in this bulletin as well as in chip form. When ordering, specify the desired case by adding the case designation as a suffix to the type number. For exam- ple, a MA46601-30 specifies a 30 volt tuning diode in a case style 30 with 8 C144 between .36 and .44 pF and a Q at -4 volts and 60 MHz = 7500. The capacitance values and capacitance ratios are for case style 30. Other case styles or chips will have slightly different values. MAXIMUM RATINGS Temperature: Operating -65C to +200C Storage -65C to +200C Voltage Breakdown Voltage Power Dissipation (derate linearly to zero at 200C) Cj = 1.0 pF max. @ 50mW Cj = 1.0 pF min. @100mW ENVIRONMENTAL RATINGS Method Levels Temperature, Storage 1031 See Maximum Ratings Temperature, Operating See Maximum Ratings Temperature, Cycling 1051 5 cycles, -65 to +150 C Shock 2016 500 gs Vibration 2056 15 g's Constant Acceleration 2006 20,000 gs Moisture Resistance 1021 10 days 4. All junctions are abrupt ie., y = 0.50 + .03 where Co (Q+VR)y Cy 5. Total capacitance ratios will vary with case choice due to differences in case capacitance (Gp). Figure 1 shows the ratio for the 30 case style. 6. Case parasitics (Cp and Lg) are given for most case styles. 7. Breakdown voltage (Vp) is measured at -10 pA. Cj (v) = Typical Performance Curve 1 ~1 0 Crolry (RATIO) = 0.5pF 1 20 3040 1 234 6 810 VOLTAGE (VOLTS) FIGURE 1. Capacitance Change Ratios for GaAs Tuning Varactors in Case Style 30 M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464io 7 M7A-COM SEMICOND,BRLNGTON bi Case Styles D MW Sb4eel4 0001236 b MMIC MA46600 Series GaAs Tuning Varactors 30 <A DIA.> > DIA. A 0.127 t B 0.064 E Cc 0.225 i ae | D 0.097 E 0.064 dD | ; F 0,064 } G G 0.024 A A H 0.083 Y GaAs: Cp = 0.18 pF Typical B Lg = 0.60 nH Typical 3 DIA. 31 P< A DIA. > INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. oA | A 0.119 | 0.127 3,02 3,23 e B 0.085 0.097 2,16 2,46 I - C 0.016 0.024 0,41 0,61 4 | D 0.077 0.083 1,96 2,11 { ~~? Cp = 0.18 pF Typical f ts = 0.60 nH Typical 36 ere INCHES MILLIMETERS > . DIM. MIN. [| MAX. MIN. | MAX. bia. A 0.119 0.125 3,02 3,18 B 0.143 0.163 3,63 4,14 e Y Cc 0.060 0.064 1,52 1,63 I B D 0.060 0.064 1,52 1,63 | | E == 70.035 0,64 Ef ] F 0.077 0.083 1,96 2,11 } * G 0.086 0.096 2,18 2,44 LK. A DIA, > GaAs: Cp = 0.18 pF Typical lg = 0.60 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 5-35OO OE eee SSS a. NZA=COM SENTCONDSBRENGTON T OTF 34 > mm Sb422)4 0003237 8 MMIC | mmanre MA4seuvu Sertes GaAs Tuning Varactors Case Styles (Contd) . = 91 E + ia . MIN. Ht-D -l DIA. ; 0.119 K 0.115 c 0.060 e 1 & 0.060 I 0.077 gc | 0.016 . v F | Cp = 0.30 pF Typical Lg = 0.40 nH Typical aA DIA.?} 92 on. INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. ora. A 0119 | 0127 |]|_3,02 3,25 B 0.174 0.194 4,42 4,93 A Cc 0.060 | 0.064 1,52 1,63 ' D 0.077 0.083 1,96 2,11 I _ E 0.060 0.062 1,52 1,57 G ' B F 0.016 0.024 0,41 0,61 Yor i G 0.055 | 0.065 1,40 1,65 t c Cp = 0.30 pF Typical Lg = 0.40 nH Typical p! E |q DIA, 94 D "| bia. INCHES MILLIMETERS e DIM. MIN. | MAX. MIN. | MAX. 4 | A 0.078 | 0.086 || 1,98 2,18 8 . B 0.040 0.050 1,02 1,27 c C _ 0.015 = 0,38 A D 0.047 0.053 1,19 1,35 pia. > : - Cp = 0.15 pF Typical 0.17 nH Typical peo M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 5-36_ GTON 2b D MM 5642224 0001238 T MENIC | T0719 MZA-COM SEMICOND +BRLN - 4 MA46600 Series GaAs Tuning Varactors 5 Case Styles (Contd) 7 95 <s>| INCHES MILLIMETERS e | a 0.078 0.086 18 CDIA 0.070 0.080 2,03 I 0.02410 haved ~ 0.040 P| Di< 0. 0.047 96 <- B INCHES MILLIMETERS _ 0.078 0.086 18 r 0.070 0.080 DIA. Cola. 0.047 0.053 mN ~ E 0.024 0.026 Fo] ee} TE Ie elo le G _ 0.015 Cp = 0.15 pF Typical o> tg = 0.47 nH Typical 97 <____-p-__ | INCHES MILLIMETERS LG be DIM. MIN. | MAX. MIN. | MAX. e { A 0.078 0.086 1,98 2,18 B 0.100 0.110 2,54 2,79 LC DIA C 0.024 0.026 0,61 0,66 D _ 0.015 _ 0,38 | E 0.040 0.050 1,02 1,27 pet be F 0.004 0.010 0,10 0,25 a G 0.029. ] 0.031 0,74 0,79 =P H 0.047 0.053 1,19 1,35 <- EP Cp = 0.15 pF Typical ls = 0.17 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 37 5.M/A-COM SEMICOND.BRLNGTON dd MA46600 Series GaAs Tuning Varactors - Case Styles (Contd) 118 a A p! DIA. 4 _ c oO DIA. |_| | { 1 | t e | B { 4 1 G U \ >|r} sasuncze 120 poe DIA. > B v . C 126 5 e- EP] DIA. e Oo - et: CO- ho Me Sb4eek4 0001239 v 1 MMIC MILLIMETERS MIN. MAX. Cp = 0.22 pF Typical Lg = 0.16 nH Typical INCHES MILLIMETERS A 0.051 0.055 B 0.040 0. Cp = 0.13 pF Typical Lg = 0.40 nH Typical INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.079 0.087 2,01 2,21 B .- 0.030 0.038 0,76 0,97 Cc 0.002 0.006 0,05 0,15 D 0.009 0.015 0,23 0,38 E 0.047 0.053 . 1,19 1,35 Cp = 0.23 pF Typicat Lg = 0.20 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 - 5-38M/A=COM SEMICOND,BRLNGTON 13 D WM SbYeel4 o00Le40 & MENIC oo , nd MA46600 Series GaAs Tuning Varactors Case Styles (Contd) 128 - INCHES MILLIMETERS 0 0.0545 | 0.0675 1 1,715 0.022 0.028 0,56 0,71 0.0295 | 0.0325 749 0 0.007 0 8 G 0.010 0.015 0,25 0,38 Cp = 0.23 pF Typical Ls = 0.20 nH Typical 138 D DIA. [om c "INCHES MILLIMETERS \1 + let { DIM. MIN. | MAX. MIN. | MAX. 441 _! A 0.113 0.118 2,87 3,00 : B 0.140 0.145 3,56 3,68 f FT C 0.016 0.019 0,41 0,48 | Hj B D 0.027 0.034 0,69 0,86 4 ' E 0.015 0.025 0,38 0,64 SG F 0.068 0.070 1,73 1,78 | pl EN G 0.025 | 0.045 || 0,64 1,14 E Ke se NC 2A H 0.018 | 0.022 0,46 0,56 ro ; J 0.015 0.025 0,38 0,64 Cp = 0.18 pF Typicat Ls = 0.10 nH Typical 168 F DIA. H DIA. 0.079 0.084 0.008 0.028 0.028 0.024 ~ 0.024 , 0.049 r AD Cp = 0.23 pF Typical ~ DIA, te = 0.20 nH Typical M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 * (617) 272-3000 TWX 710-392-6789 * TELEX 94-9464M/A-COM SEMI er 7 COND,BRLNGTON 1) D = 5b4eeL4 0001241 T MENIC T-07-19 MA46600 Series GaAs Tuning Varactors Case Styles (Contd) i 186 INCHES MILLIMETERS DIM. MIN. | MAX. MIN. | MAX. A 0.094 0.102 2,39 2,59 B 0.031 0.044 0,79 1,12 C 0.019 0.021 0,48 0,53 D 0.003 0.006 0,76 0,15 E 0.130 0.170 3,30 4,32 - Ff Cp = 0.15 Typical D Lg = 0.40 nH Typical 276 MIN. to 0.010 B 0.040 F 0.051 i 0.200 0.019 0.021 Cp = 0.13 pF Typical . f Lg = 0.40 nH Typical < E>} Chip Style 277 |< ao] INCHES MILLIMETERS C) | 0.010 | 0.012 |[_ 0 0,31 0.004 0.005 0,10 0,13 ait. ae M/A-COM SEMICONDUCTOR PRODUCTS OPERATION Burlington, MA 01803 (617) 272-3000 TWX 710-332-6789 TELEX 94-9464 5-40 ,