1
FEATURES APPLICATIONS
COM1
NO1
V+
NC4
COM4
NO4
IN3-4
NC3
COM3
NO3
GND
NC2
NC1
IN1-2NO2
COM2
PW PACKAGE
(TOP VIEW)
2
3
4
5
6
7
8
1
15
14
13
12
11
10
9
16
RGT PACKAGE
(TOP VIEW)
COM1
NO1
V+
NC4
COM4
NO4
IN3-4
NC3
COM3
NO3
GND
NC2
NC1
IN1-2
NO2
COM2
2
3
4
5678
1
15 14 13
12
11
10
9
16
RSV PACKAGE
(TOP VIEW)
COM2
NO2
IN1-2
NC1
COM1
NO1
V+
NC4
COM4
NO4
IN3-4
NC3
NC2
GND
NO3
COM3
1 12
211
310
4
5
16
6
15
7
14
8
13
9
DESCRIPTION/ORDERING INFORMATION
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
0.45- ΩQUAD SPDT ANALOG SWITCHQUAD-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER WITH TWO CONTROLS
•Cell Phones•Specified Break-Before-Make Switching
•PDAs•Low ON-State Resistance ( < 0.5 Ω)
•Portable Instrumentation•Control Inputs Are 1.8-V Logic Compatible
•Audio and Video Signal Routing•Low Charge Injection
•Low-Voltage Data-Acquisition Systems•Excellent ON-State Resistance Matching
•Communication Circuits•Low Total Harmonic Distortion (THD)
•Modems•1.65-V to 4.3-V Single-Supply Operation
•Hard Drives•Latch-Up Performance Exceeds 100 mA
•Computer PeripheralsPer JESD 78, Class II
•Wireless Terminals and Peripherals•ESD Performance Tested Per JESD 22– 2000-V Human-Body Model(A114-B, Class II)– 1000-V Charged-Device Model (C101)
The TS3A44159 is a quad single-pole double-throw (SPDT) analog switch with two control inputs, which isdesigned to operate from 1.65 V to 4.3 V. This device is also known as a dual double-pole double-throw (DPDT)configuration. It offers low ON-state resistance and excellent ON-state resistance matching with thebreak-before-make feature, to prevent signal distortion during the transferring of a signal from one channel toanother. The device has an excellent total harmonic distortion (THD) performance and consumes very lowpower. These features make this device suitable for portable audio applications
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2007 – 2008, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
NC4
COM4
NO4
IN3-4
NC3
COM3
NO3
COM1
IN1-2
NO1
NC2
NC1
NO2
COM2
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
ORDERING INFORMATION
T
A
PACKAGE
(1) (2)
ORDERABLE PART NUMBER TOP-SIDE MARKING
RGT – QFN Tape and reel TS3A44159RGTR ZWH– 40 ° C to 85 ° C RSV – QFN Tape and reel TS3A44159RSVR ZWHPW – TSSOP Tape and reel TS3A44159PWR YC4159
(1) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging .(2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .
SUMMARY OF CHARACTERISTICS
(1)
Quad 2:1 Multiplexer/DemultiplexerConfiguration
(4 × SPDT or 2 × DPDT)Number of channels 4ON-state resistance (r
on
) 0.45 Ω(max)ON-state resistance match ( Δr
on
) 0.07 Ω(max)ON-state resistance flatness (r
ON(flat)
) 0.1 Ω(max)Turn-on/turn-off time (t
ON
/t
OFF
) 23 ns/32 nsBreak-before-make time (t
BBM
) 30 nsCharge injection (Q
C
) 139 pCBandwidth (BW) 35 MHzOFF isolation (O
ISO
) – 71 dBCrosstalk (X
TALK
) – 73 dBTotal harmonic distortion (THD) 0.003%Power-supply current (I
+
) 0.4 µAPackage option 16-pin QFN
(1) V
+
= 4.3 V, T
A
= 25 ° C
FUNCTION TABLE
NC TO COM, NO TO COM,IN
COM TO NC COM TO NO
L ON OFFH OFF ON
LOGIC DIAGRAM
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Product Folder Link(s): TS3A44159
ABSOLUTE MAXIMUM RATINGS
(1) (2)
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
V
+
Supply voltage range
(3)
– 0.5 4.6 VV
NC
V
NO
Analog voltage range
(3) (4) (5)
– 0.5 V
+
+ 0.5 VV
COM
I
K
Analog port diode current V
NC
, V
NO
, V
COM
< 0 – 50 mAI
NC
ON-state switch current – 200 200I
NO
V
NC
, V
NO
, V
COM
= 0 to V
+
mAON-state peak switch current
(6)
– 400 400I
COM
V
I
Digital input voltage range – 0.5 4.6 VI
IK
Digital input clamp current
(3) (4)
V
I
< 0 – 50 mAI
+
Continuous current through V
+
100 mAI
GND
Continuous current through GND – 100 mAPW package 108θ
JA
Package thermal impedance
(7)
RGT package TBD ° C/WRSV package TBDT
stg
Storage temperature range – 65 150 ° C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods maydegrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyondthose specified is not implied.(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(3) All voltages are with respect to ground, unless otherwise specified.(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.(5) This value is limited to 4.6 V maximum.(6) Pulse at 1-ms duration < 10% duty cycle(7) The package thermal impedance is calculated in accordance with JESD 51-7.
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TS3A44159
ELECTRICAL CHARACTERISTICS FOR 4.3-V SUPPLY
(1)
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 ° C 0.3 0.45ON-state V
NO
or V
NC
= 2.5 V, Switch ON,r
on
4.3 V Ωresistance I
COM
= – 100 mA, See Figure 16
Full 0.5ON-state 25 ° C 0.05 0.07V
NO
or V
NC
= 2.5 V, Switch ON,resistance match Δr
on
4.3 V ΩI
COM
= – 100 mA, See Figure 16
Full 0.1between channelsON-state V
NO
or V
NC
= 1 V, 25 ° C 0.02 0.1Switch ON,resistance r
on(flat)
1.5 V, 2.5 V, 4.3 V ΩSee Figure 16
Full 0.1flatness I
COM
= – 100 mA,V
NO
or V
NC
= 0.3 V, 25 ° C – 20 5 20NC, NO V
COM
= 3.0 V,I
NO(OFF)
,OFF leakage or See Figure 17 4.3 V nAI
NC(OFF)
Full – 90 90current V
NO
or V
NC
= 3.0 V,V
COM
= 0.3 V,V
NO
or V
NC
= 0.3 V, 25 ° C – 20 5 20NC, NO V
COM
= Open,I
NO(ON)
,ON leakage or See Figure 18 4.3 V nAI
NC(ON)
Full – 90 90current V
NO
or V
NC
= 3.0 V,V
COM
= Open,V
NO
or V
NC
= Open, 25 ° C – 20 5 20COM V
COM
= 0.3 V,ON leakage I
COM(ON)
or See Figure 18 4.3 V nAFull – 90 90current V
NO
or V
NC
= Open,V
COM
= 3.0 V,
Digital Control Inputs (IN1-2, IN3-4)
(2)
Input logic high V
IH
Full 4.3 V 1.5 4.3 VInput logic low V
IL
Full 4.3 V 0 1 V25 ° C 0.5 10Input leakage
I
IH
, I
IL
V
IN
= 3.6 V or 0 4.3 V nAcurrent
Full 50
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
4Submit Documentation Feedback Copyright © 2007 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3A44159
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
ELECTRICAL CHARACTERISTICS FOR 4.3-V SUPPLY (continued)T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 17 23V
COM
= V
+
,Turn-on time t
ON
C
L
= 35 pF 4.3 V nsR
L
= 50 Ω,
Full 2525 ° C 12 32V
COM
= V
+
,Turn-off time t
OFF
C
L
= 35 pF 4.3 V nsR
L
= 50 Ω,
Full 3525 ° C 2 9 30Break-before-make V
NC
= V
NO
= V
+
,t
BBM
C
L
= 35 pF 4.3 V nstime R
L
= 50 Ω,
Full 1 35V
GEN
= 0,Charge injection Q
C
C
L
= 1 nF 25 ° C 4.3 V 139 pCR
GEN
= 0,NC, NO V
NC
or V
NO
= V
+
orC
NC(OFF)
,off GND, See Figure 19 25 ° C 4.3 V 50 pFC
NO(OFF)capacitance Switch OFF,V
NC
or V
NO
= V
+
orNC, NO C
NC(ON)
,
GND, See Figure 19 25 ° C 4.3 V 160 pFON capacitance C
NO(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 19 25 ° C 4.3 V 160 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND 25 ° C 4.3 V 2.5 pFcapacitance
Bandwidth BW R
L
= 50 Ω, Switch ON 25 ° C 4.3 V 35 MHzR
L
= 50 Ω,OFF isolation O
ISO
Switch OFF 25 ° C 4.3 V – 71 dBf = 100 kHz,R
L
= 50 Ω,Crosstalk X
TALK
Switch ON 25 ° C 4.3 V – 73 dBf = 100 kHz,Total harmonic R
L
= 600 Ω,THD f = 20 Hz to 20 kHz 25 ° C 4.3 V 0.003 %distortion C
L
= 50 pF,
Supply
25 ° C 0.15 0.4Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 4.3 V µAcurrent
Full 1.2
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Link(s): TS3A44159
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY
(1)
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 ° C 0.37 0.55ON-state V
NO
or V
NC
= 2.0 V, Switch ON,r
on
3 V Ωresistance I
COM
= – 100 mA, See Figure 16
Full 0.6ON-state V
NO
or V
NC
= 2.0 V, 0.8 25 ° C 0.06 0.07Switch ON,resistance match Δr
on
V, 3 V ΩSee Figure 16
Full 0.1between channels I
COM
= – 100 mA,ON-state 25 ° C 0.05 0.1V
NO
or V
NC
= 2.0 V, 0.8 V Switch ON,resistance r
on(flat)
3 V ΩI
COM
= – 100 mA, See Figure 16
Full 0.1flatness
V
NO
or V
NC
= 0.3 V, 25 ° C – 15 5 15NC, NO V
COM
= 3.0 V,I
NO(OFF)
,OFF leakage or See Figure 17 3.6 V nAI
NC(OFF)
Full – 50 50current V
NO
or V
NC
= 3.0 V,V
COM
= 0.3 V,V
NO
or V
NC
= 0.3 V, 25 ° C – 15 5 15NC, NO V
COM
= Open,I
NO(ON)
,ON leakage or See Figure 18 3.6 V nAI
NC(ON)
Full – 50 50current V
NO
or V
NC
= 3.0 V,V
COM
= Open,V
NO
or V
NC
= Open, 25 ° C – 15 5 15COM V
COM
= 0.3 V,ON leakage I
COM(ON)
or See Figure 18 3.6 V nAFull – 50 50current V
NO
or V
NC
= Open,V
COM
= 3.0 V,
Digital Control Inputs (IN1-2, IN3-4)
(2)
Input logic high V
IH
Full 1.25 4.3 VInput logic low V
IL
Full 0 0.8 V25 ° C 0.5 10Input leakage
I
IH
, I
IL
V
IN
= 3.6 V or 0 3.6 V nAcurrent
Full 50
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6Submit Documentation Feedback Copyright © 2007 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3A44159
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)V
+
= 3 V to 3.6 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 3 V 20 38V
COM
= V
+
,Turn-on time t
ON
C
L
= 35 pF ns3 V toR
L
= 50 Ω,
Full 403.6 V25 ° C 3 V 14 34V
COM
= V
+
,Turn-off time t
OFF
C
L
= 35 pF ns3 V toR
L
= 50 Ω,
Full 353.6 V25 ° C 3 V 3 11 35Break-before-make V
NC
= V
NO
= V
+
,t
BBM
C
L
= 35 pF ns3 V totime R
L
= 50 Ω,
Full 2 553.6 VV
GEN
= 0,Charge injection Q
C
C
L
= 1 nF 25 ° C 3 V 109 pCR
GEN
= 0,NC, NO C
NC(OFF)
, V
NC
or V
NO
= V
+
or GND,
See Figure 19 25 ° C 3 V 51 pFOFF capacitance C
NO(OFF)
Switch OFF,NC, NO C
NC(ON)
, V
NC
or V
NO
= V
+
or GND,
See Figure 19 25 ° C 3 V 162 pFON capacitance C
NO(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 19 25 ° C 3 V 162 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND 25 ° C 3 V 2.5 pFcapacitance
Bandwidth BW R
L
= 50 Ω, Switch ON 25 ° C 3 V 35 MHzR
L
= 50 Ω,OFF isolation O
ISO
Switch OFF 25 ° C 3 V – 71 dBf = 100 kHz,R
L
= 50 Ω,Crosstalk X
TALK
Switch ON 25 ° C 3 V – 73 dBf = 100 kHz,Total harmonic R
L
= 600 Ω,THD f = 20 Hz to 20 kHz 25 ° C 3 V 0.003 %distortion C
L
= 50 pF,
Supply
25 ° C 0.015 0.2Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 3.6 V µAcurrent
Full 0.7
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Link(s): TS3A44159
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY
(1)
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
V
+
= 2.3 V to 2.7 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 ° C 0.45 0.6ON-state V
NO
or V
NC
= 1.8 V, Switch ON,r
on
2.3 V Ωresistance I
COM
= – 100 mA, See Figure 16
Full 0.7ON-state 25 ° C 0.045 0.07resistance match V
NO
or V
NC
= 1.8 V, 0.8 V, Switch ON,Δr
on
2.3 V Ωbetween I
COM
= – 100 mA, See Figure 16
Full 0.1channels
ON-state 25 ° C 0.06 0.15V
NO
or V
NC
= 1.8 V, 0.8 V Switch ON,resistance r
on(flat)
2.3 V ΩI
COM
= – 100 mA, See Figure 16
Full 0.2flatness
V
NO
or V
NC
= 0.3 V, 25 ° C – 10 0.5 10NC, NO V
COM
= 2.3 V,I
NO(OFF)
,OFF leakage or See Figure 17 2.7 V nAI
NC(OFF)
Full – 20 20current V
NO
or V
NC
= 2.3 V,V
COM
= 0.3V,V
NO
or V
NC
= 0.3 V, 25 ° C – 10 0.1 10NC, NO V
COM
= Open,I
NO(ON)
,ON leakage or See Figure 18 2.7 V nAI
NC(ON)
Full – 20 20current V
NO
or V
NC
= 2.3 V,V
COM
= Open,V
NO
or V
NC
= Open, 25 ° C – 10 0.1 10COM V
COM
= 0.3 V,ON leakage I
COM(ON)
or See Figure 18 2.7 V nAFull – 20 20current V
NO
or V
NC
= Open,V
COM
= 2.3 V,
Digital Control Inputs (IN1-2, IN3-4)
(2)
Input logic high V
IH
Full 1.2 4.3 VInput logic low V
IL
Full 0 0.6 V25 ° C 0.5 10Input leakage
I
IH
, I
IL
V
IN
= 3.6 V or 0 2.7 V nAcurrent
Full 50
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
8Submit Documentation Feedback Copyright © 2007 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3A44159
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)V
+
= 2.3 V to 2.7 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 2.5 V 2.6 47V
COM
= V
+
,Turn-on time t
ON
C
L
= 35 pF ns2.3 V toR
L
= 50 Ω,
Full 502.7 V25 ° C 2.5 V 16.5 34V
COM
= V
+
,Turn-off time t
OFF
C
L
= 35 pF ns2.3 V toR
L
= 50 Ω,
Full 352.7 V25 ° C 2.5 V 4 15 35Break-before- V
NC
= V
NO
= V
+
,t
BBM
C
L
= 35 pF ns2.3 V tomake time R
L
= 50 Ω,
Full 3 352.7 VV
GEN
= 0,Charge injection Q
C
C
L
= 1 nF 25 ° C 2.5 V 84 pCR
GEN
= 0,NC, NO C
NC(OFF)
, V
NC
or V
NO
= V
+
or GND,
See Figure 19 25 ° C 2.5 V 52 pFOFF capacitance C
NO(OFF)
Switch OFF,NC, NO C
NC(ON)
, V
NC
or V
NO
= V
+
or GND,
See Figure 19 25 ° C 2.5 V 163 pFON capacitance C
NO(ON)
Switch OFF,COM
C
COM(ON)
V
COM
= V
+
or GND, See Figure 19 25 ° C 2.5 V 163 pFON capacitance
Digital input
C
I
V
I
= V
+
or GND 25 ° C 2.5 V 2.5 pFcapacitance
Bandwidth BW R
L
= 50 Ω, Switch ON 25 ° C 2.5 V 35 MHzR
L
= 50 Ω,OFF isolation O
ISO
Switch OFF 25 ° C 2.5 V – 71 dBf = 100 kHz,R
L
= 50 Ω,Crosstalk X
TALK
Switch ON 25 ° C 2.5 V – 73 dBf = 100 kHz,Total harmonic R
L
= 600 Ω,THD f = 20 Hz to 20 kHz 25 ° C 2.5 V 0.009 %distortion C
L
= 50 pF,
Supply
25 ° C 0.004 0.1Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 2.5 V µAcurrent
Full 0.5
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TS3A44159
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY
(1)
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
V
+
= 1.65 V to 1.95 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Analog Switch
Analog signal V
COM
,
0 V
+
Vrange V
NO
, V
NC
25 ° C 0.5 0.7ON-state V
NO
or V
NC
= 1.5 V, Switch ON,r
on
1.65 V Ωresistance I
COM
= – 100 mA, See Figure 16
Full 0.8ON-state 25 ° C 0.05 0.07resistance match V
NO
or V
NC
= 1.5 V, 0.6 V Switch ON,Δr
on
1.65 V Ωbetween I
COM
= – 100 mA, See Figure 16
Full 0.1channels
ON-state V
NO
or V
NC
= 1.5 V, 0.6 V 25 ° C 0.5 0.7Switch ON,resistance r
on(flat)
1.5 V, 2.5 V, 1.65 V ΩSee Figure 16
Full 0.8flatness I
COM
= – 100 mA,V
NO
or V
NC
= 0.3 V, 25 ° C – 10 0.5 10NC, NO V
COM
= 1.65 V,I
NO(OFF)
,OFF leakage or See Figure 17 1.95 V nAI
NC(OFF)
Full – 20 20current V
NO
or V
NC
= 1.65 V,V
COM
= 0.3 V,V
NO
or V
NC
= 0.3 V, 25 ° C – 10 0.1 10NC, NO V
COM
= Open,I
NO(ON)
,ON leakage or See Figure 18 1.95 V nAI
NC(ON)
Full – 20 20current V
NO
or V
NC
= 1.65 V,V
COM
= Open,V
NO
or V
NC
= Open, 25 ° C – 10 0.1 10COM V
COM
= 0.3V,ON leakage I
COM(ON)
or See Figure 18 1.95 V nAFull – 20 20current V
NO
or V
NC
= Open,V
COM
= 1.65 V,
Digital Control Inputs (IN1-2, IN3-4)
(2)
Input logic high V
IH
Full 1 4.3 VInput logic low V
IL
Full 0 0.4 V25 ° C 0.5 10Input leakage
I
IH
, I
IL
V
IN
= 3.6 V or 0 1.95 V nAcurrent
Full 50
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at V
+
or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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Product Folder Link(s): TS3A44159
TS3A44159
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......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)V
+
= 1.65 V to 1.95 V, T
A
= – 40 ° C to 85 ° C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS T
A
V
+
MIN TYP MAX UNIT
Dynamic
25 ° C 1.8 V 40 70V
COM
= V
+
,Turn-on time t
ON
C
L
= 35 pF ns1.65 V toR
L
= 50 Ω,
Full 751.95 V25 ° C 1.8 V 22 45V
COM
= V
+
,Turn-off time t
OFF
C
L
= 35 pF ns1.65 V toR
L
= 50 Ω,
Full 501.95 V25 ° C 1.8 V 5 25 70Break-before- V
NC
= V
NO
= V
+
,t
BBM
C
L
= 35 pF ns1.65 V tomake time R
L
= 50 Ω,
Full 4 751.95 VV
GEN
= 0,Charge injection Q
C
C
L
= 1 nF 25 ° C 1.8 V 64 pCR
GEN
= 0,NC, NO C
NC(OFF)
, V
NC
or V
NO
= V
+
or GND,
See Figure 19 25 ° C 1.8 V 52 pFOFF capacitance C
NO(OFF)
Switch OFF,NC, NO C
NC(ON)
, V
NC
or V
NO
= V
+
or GND,
See Figure 19 25 ° C 1.8 V 164 pFON capacitance C
NO(ON)
Switch OFF,COM V
COM
= V
+
or GND,C
COM(ON)
See Figure 19 25 ° C 1.8 V 164 pFON capacitance Switch ON,Digital input
C
I
V
I
= V
+
or GND 25 ° C 1.8 V 2.5 pFcapacitance
Bandwidth BW R
L
= 50 Ω, Switch ON 25 ° C 1.8 V 35 MHzR
L
= 50 Ω,OFF isolation O
ISO
Switch OFF 25 ° C 1.8 V – 71 dBf = 100 kHz,R
L
= 50 Ω,Crosstalk X
TALK
Switch ON 25 ° C 1.8 V – 73 dBf = 100 kHz,Total harmonic R
L
= 600 Ω, f = 20 Hz toTHD 25 ° C 1.8 V 0.1 %distortion C
L
= 50 pF, 20 kHz
Supply
25 ° C 0.001 0.05Positive supply
I
+
V
I
= V
+
or GND, Switch ON or OFF 1.95 V µAcurrent
Full 0.15
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): TS3A44159
TYPICAL PERFORMANCE
V (V)
COM
r ( )
on Ω
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.00
0.14
0.28
0.41
0.55
0.69
0.83
0.97
1.10
1.24
1.38
1.52
1.66
1.79
1.93
2.07
2.21
T =
A25ºC
T =
A85ºC
T = –40ºC
A
V (V)
COM
r( )
on Ω
0.00
0.50
1.00
1.50
2.00
2.50
0.00
0.10
0.20
0.30
0.40
0.50
0.59
0.69
0.79
0.89
0.99
1.09
1.19
1.29
1.39
1.49
1.58
T =
A25ºC
T =
A85ºC
T = –40ºC
A
V (V)
COM
r ( )
on Ω
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.00
0.26
0.52
0.77
1.03
1.29
1.55
1.81
2.06
2.32
2.58
2.84
3.10
3.35
3.61
3.87
4.13
T =
A25ºC
T =
A85ºC
T = –40ºC
A
V (V)
COM
r ( )
on Ω
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.00
0.18
0.36
0.54
0.72
0.90
1.08
1.26
1.44
1.62
1.80
1.98
2.16
2.34
2.52
2.70
2.88
T =
A25ºC
T =
A85ºC
T = –40ºC
A
V (V)
COM
r ( )
on Ω
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
0.00
0.10
0.20
0.30
0.40
0.50
0.59
0.69
0.79
0.89
0.99
1.09
1.19
1.29
1.39
1.49
1.58
1.65 V
2.3 V
3 V
4.3 V
Q (pC)
C
VCOM (V)
–250
–200
–150
–100
–50
0
50
100
150
200
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.5 2.7 3.0 3.3 3.6 3.9 4.2 4.3
1.8 V
2.5 V
3.3 V
4.3 V
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
Figure 1. r
on
vs V
COM
Figure 2. r
on
vs V
COM(V
+
= 1.65 V) (V
+
= 2.3 V)
Figure 3. r
on
vs V
COM
Figure 4. r
on
vs V
COM(V
+
= 3 V) (V
+
= 4.3 V)
Figure 5. r
on
vs V
COM
Figure 6. Charge Injection (Q
C
) vs V
COM(All Voltages) (T
A
= 25 ° C)
12 Submit Documentation Feedback Copyright © 2007 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3A44159
0
2
4
6
8
10
12
14
16
18
–40 25 85
Temperature (°C)
t /t (ns)
ON OFF
tON
tOFF
Frequency (Hz)
Attenuation (dB)
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9
Frequency (Hz)
Gain (dB)
–14
–12
–10
–8
–6
–4
–2
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9
Frequency (Hz)
Attenuation (dB)
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9
Frequency(Hz)
THD(%)
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0.160
1 10 100 1000 10000 100000
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
TYPICAL PERFORMANCE (continued)
Figure 7. t
ON
and t
OFF
vs Supply Voltage Figure 8. t
ON
and t
OFF
vs Temperature(T
A
= 25 ° C) (V
+
= 4.3 V)
Figure 9. Bandwidth Figure 10. OFF Isolation
Figure 11. Crosstalk Figure 12. Total Harmonic Distortion vs Frequency(V
+
= 1.8 V)
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): TS3A44159
Frequency (Hz)
THD (%)
0.0029
0.0029
0.0030
0.0030
0.0031
0.0031
0.0032
0.0032
0.0033
1 10 100 1000 10000 100000
Frequency(Hz)
THD(%)
0.000
0.002
0.004
0.006
0.008
0.010
0.012
1 10 100 1000 10000 100000
Frequency (Hz)
THD (%)
0.000
0.001
0.001
0.002
0.002
0.003
0.003
0.004
1 10 100 1000 10000 100000
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
TYPICAL PERFORMANCE (continued)
Figure 13. Total Harmonic Distortion vs Frequency Figure 14. Total Harmonic Distortion vs Frequency(V
+
= 2.5 V) (V
+
= 3.3 V)
Figure 15. Total Harmonic Distortion vs Frequency(V
+
= 4.3 V)
14 Submit Documentation Feedback Copyright © 2007 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3A44159
PARAMETER MEASUREMENT INFORMATION
V+
ICOM
ron =ICOM
GND
Channel ON
NC
VI
NO
COM VCOM
VI= VIH or VIL
VNO
VNC
+
+
IN
W
VCOM –VNO or VNC
Channel OFF
OFF-State Leakage Current
VI= VIH or VIL
V+
GND
NC
VI
NO
COM VCOM
VNO
VNC
+
+
+
IN
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
Figure 16. ON-state Resistance (r
ON
)
Figure 17. OFF-State Leakage Current(I
NC(OFF)
, I
NC(PWROFF)
, I
NO(OFF)
, I
NO(PWROFF)
, I
COM(OFF)
, I
COM(PWROFF)
)
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): TS3A44159
Channel ON
ON-State Leakage Current
VI= VIH or VIL
V+
GND
NC
VI
NO
COM VCOM
VNO
VNC
+
+
IN
V+
GND
VBIAS VI
VI = V+ or GND
VBIAS = V+ or GND
Capacitance is measured at NC,
NO, COM, and IN inputs during
ON and OFF conditions.
Capacitance
Meter
VCOM
VNO
VNC
COM
NO
NC
IN
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 18. ON-State Leakage Current(I
COM(ON)
, I
NC(ON)
, I
NO(ON)
)
Figure 19. Capacitance(C
I
, C
COM(ON)
, C
NC(OFF)
, C
NO(OFF)
, C
NC(ON)
, C
NO(ON)
)
16 Submit Documentation Feedback Copyright © 2007 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3A44159
CL(2) RL
VCOM
V+
GND
NC or NO VNC or VNO
VI
NC or NO
COM
(1)
V+
VCOM
50 Ω
RLCL
35 pFtON
TEST
V+
50 Ω35 pFtOFF
50%
tON tOFF
50%
90% 90%
Logic
Input
(VI)
V+
(VNC or VNO)
0
CL(2) RL
IN
V+
GND
NC or NO
VNC or VNO
VI
NC or NO COM VCOM
CL(2) RL
tBBM
50%
90% 90%
Logic
Input
(VI)
(VCOM)
V+
0
IN
VNC or VNO = V+
RL = 50 W
CL = 35 pF
Logic
Input(1)
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
PARAMETER MEASUREMENT INFORMATION (continued)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 20. Turn-On (t
ON
) and Turn-Off Time (t
OFF
)
A. C
L
includes probe and jig capacitance.B. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.
Figure 21. Break-Before-Make Time (t
BBM
)
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Link(s): TS3A44159
V+
GND
NC
VI
NO
COM
50
50
VNC
VCOM
Channel ON: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
DC Bias = 350 mV
Network Analyzer
Source
Signal
+
VI = V+ or GND
IN
NC
NO
COM
VNC
VCOM
Channel OFF: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
50
V+
GND
50
50
Network Analyzer
Source
Signal
VI
+
VI = V+ or GND
IN
DC Bias = 350 mV
NC
NO
50
50
VNC VCOM
Channel ON: NC to COM
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50- load)
50
GND
VNO
Source
Signal
Channel OFF: NO to COM
Network Analyzer
VI
+
VI = V+ or GND
IN
DC Bias = 350 mV
V+
TS3A44159
SCDS225A – MARCH 2007 – REVISED JUNE 2008 .........................................................................................................................................................
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 22. Bandwidth (BW)
Figure 23. OFF Isolation (O
ISO
)
Figure 24. Crosstalk (X
TALK
)
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Product Folder Link(s): TS3A44159
GND
NC or NO
IN
RGEN
VI
NC or NO
COM VCOM
CL(2)
OFF
VCOM
ON OFF
∆VCOM
VGEN +
VI= VIH or VIL
CL= 1 nF
VGEN = 0 to V+
RGEN = 0
QC= CL×⋅∆VCOM
VIH
VIL
Logic
Input
(VI)
Logic
Input(1)
V+
GND
NO
COM
10 mF
CL(1)
RL10 mF
IN
VI
600 W600 W
600 W
Audio Analyzer
Source
Signal
Source Signal = 20 Hz to 20 kHz
Channel ON: COM to NO VI= VIH or VIL RL = 600 W
CL = 50 pF
V+/2
V+
VSOURCE = V+ P-P
TS3A44159
www.ti.com
......................................................................................................................................................... SCDS225A – MARCH 2007 – REVISED JUNE 2008
PARAMETER MEASUREMENT INFORMATION (continued)
A. All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz, Z
O
= 50 Ω, t
r
< 5 ns,t
f
< 5 ns.B. C
L
includes probe and jig capacitance.
Figure 25. Charge Injection (Q
C
)
A. C
L
includes probe and jig capacitance.
Figure 26. Total Harmonic Distortion (THD)
Copyright © 2007 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 19
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PACKAGE OPTION ADDENDUM
www.ti.com 16-May-2011
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TS3A44159PWR ACTIVE TSSOP PW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3A44159PWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3A44159RGTR ACTIVE QFN RGT 16 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3A44159RGTRG4 ACTIVE QFN RGT 16 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3A44159RSVR ACTIVE UQFN RSV 16 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TS3A44159RSVRG4 ACTIVE UQFN RSV 16 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
PACKAGE OPTION ADDENDUM
www.ti.com 16-May-2011
Addendum-Page 2
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TS3A44159PWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
TS3A44159RGTR QFN RGT 16 3000 330.0 12.4 3.3 3.3 1.0 8.0 12.0 Q2
TS3A44159RSVR UQFN RSV 16 3000 177.8 12.4 2.0 2.8 0.7 4.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TS3A44159PWR TSSOP PW 16 2000 367.0 367.0 35.0
TS3A44159RGTR QFN RGT 16 3000 346.0 346.0 35.0
TS3A44159RSVR UQFN RSV 16 3000 202.0 201.0 28.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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