HAL501...HAL506, HAL508 Hall Effect Sensor ICs Ys MICRONAS INTERMETALL Wnt MICRONAS Edition May 5, 1997 6251-405-1DS INTERMETALLHAL501...HAL506 HAL508 Hall Effect Sensor IC in CMOS technology Common Features: switching offset compensation at 62 kHz operates from 3.8 V to 24 V supply voltage overvoltage and reverse-voltage protection extremely robust against mechanical stress short-circuit protected open-drain output operates with magnetic fields from DC to 10 kHz on-chip temperature compensation circuitry mini- mizes shifts in on and off points and hysteresis over temperature and supply voltage the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hystere- sis ideal sensor for ignition timing, anti-lock brake sys- tems and revolution counting in extreme automotive and industrial environments EMC corresponding to DIN 40839 Specifications The types differ according to the magnetic fiux density values for the magnetic switching points, the tempera- ture behavior of the magnetic switching points, and the mode of switching. HAL501 switching type: bipolar, very sensitive output turns low with magnetic south pole on branded side of package output state can change if magnetic field is removed HAL502, HAL503, HALS05 switching type: latch output turns low with magnetic south pole on branded side of package output state does not change if magnetic field is re- moved HAL504, HAL506, HAL508 - switching type: unipolar output turns low with magnetic south pole on branded side of package output turns high if magnetic field is removed MICRONAS INTERMETALLHAL5S01...HAL506, HAL508 Marking Code Type Temperature Range A E Cc Nateorya | Sot | SO1E | s01C NaLeopua | 502A | so2e | s02c aLeoaua | 503A | SO3E | 503C NaLeoaa | S040 | S04E | 504C NACsceua | 505A | S05E | s0sc NAL eoeua | 500A | S06E | 506C NaLsosua | 508A | SBE | 508C HAL XXXPP-T | A: Ty =-40 C to +170 C E: Ty =40 C to +100 C C: Ty = 0 C to +100 C Designation of Hall Sensors Temperature Range: A, E, or C Operating Junction Temperature Range Package: UA for TO-92UA, S for SOT-89A Type: 501...506, 508 Example: HAL501UA-E Type: 501 Package: TO-92UA Temperature Range: T; = 40 C to +100 C Solderability Package SOT-89A: according to IEC68-2-58 Package TO-92UA: according to IEC68-2-20 Fig. 1: Pin configuration Vv Reverse Temperature . Short Circuit 8 3 Voltage& [J Dependent _| Hysteresis Overvoltaga 1 Overvoltage Bias Control Protection Protection Hl Plate re 71 Comparator OUT Switch [4 > Lt output 3 Clock GND I 2 Fig. 2: HAL50x block diagram MICRONAS INTERMETALLHAL501...HAL506, HAL508 Functional Description This Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines at right angles to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bounce. Magnetic offset caused by mechanical stress is com- pensated for by using the switching offset compensa- tion technique. Therefore, an internal oscillator pro- vides a two phase clock. The hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and momentary hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the ap- propriate state. The time from crossing the magnetic switch level to switching of output can vary between zero and 1/fose- Shunt protection devices clamp voltage peaks at the Output-Pin and Vpp-Pin together with external series resistors. Reverse currentis limited at the Vpp-Pin by an internal series resistor up to 15 V. No external reverse protection diode is needed at the Vpp-Pin for values ranging from O V to -15 V. fose Vout 4 Von Vor F Inn} h A: Mfogg = 16 ps Fig. 3: Timing diagram Outline Dimensions sensitive area position of hall sensor Teferenced to the center of package x=0+0.1mm y=0.3+40.1mm (0.25 mm x 6.12 mm) top view Fig. 4: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm 4.5901 4.060" ws sensitive area position of hall sensor referenced to the center of package x=0+0.1 mm y=05+0.1mm {0.25 mm x 0.12 mm) 03 rt 0.36 0.4 1.27|1.27 | 2.54 branded side Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm MICRONAS INTERMETALLHAL501...HAL506, HAL508 Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit Vpp Supply Voltage 1 15 281) V Vp Test Voltage for Supply 1 -24?) - V -lpp Reverse Supply Current 1 - 501) mA Ippz Supply Current through 1 -3009) 3003) mA Protection Device Vou Output High Voltage 3 - 281) V lo Continuous Output On Current 3 - 30 mA lomax Peak Output On Current 3 - 2509) mA loz Output Current through 3 -3003) 300) mA Protection Device Ts Storage Temperature Range -65 150 C Ty Junction Temperature Range 40 150 C 40 1704) 1) as long as Tmax is not exceeded 2) with a 220 Q series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t<1000h Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Concitions/Characteristics of this specification is not implied. Exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol Parameter Pin No. Min. Typ. Max. Unit Vop Supply Voltage 1 3.8 - 24 Vv lo Continuous Output On Current 3 0 - 20 mA Extended Operational Range Within the extended operating range, the ICs operate as mentioned in the functional description. The functionality has been tested on samples, whereby the characteristics may lie outside the specified limits. Symbol Parameter Pin No. Min. Typ. Max. Unit Vop Supply Voltage 1 3.3 - 25 Vv lo Continuous Output On Current 3 - - 30 mA MICRONAS INTERMETALLHAL501 HAL508 ..HAL506, Electrical Characteristics at T) = 40 C to +170 C , Vpp = 3.8 V to 24 V, as not otherwise specified Typical Characteristics for Ty = 25 C and Vpp = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions lbp Supply Current 1 2.6 3.2 3.8 mA Ty = 25C lbp Supply Current over 1 1.6 3.2 5.2 mA Temperature Range Vppz Overvoltage Protection 1 ~ 28.5 32 Vv lop = 25 mA, Ty = 25C, at Supply t=20 ms Voz Overvoltage Protection atOutput | 3 - 28 32 Vv lon = 25 mA, Ty = 25C, t=20 ms Vor Output Voltage 3 - 130 180 mv lot = 20 mA, Ty = 25 C, Vop = 4.5 V to 24 V VoL Output Voltage over 3 - 130 400 mv lor = 20 mA Temperature Range lou Output Leakage Current 3 - 0.06 0.1 pA B< Borr, Ty = 25 C, Vou = 3.8 to 24 V lou Output Leakage Current over | 3 - - 10 pA B< Borg, Ty < 150 C, Temperature Range Vou = 3.8 to 24 V fose Internal Oscillator - 52 62.5 73 kHz Ty = 25 C, Chopper Frequency Vop = 4.5 V to 24 V fose Internal Oscillator Chopper Fre- | - 45 62.5 79 kHz Vpp = 3.8 V to 24 V quency over Temperature Range ten(o) Enable Time of Output after 1 - 30 70 pS Vpp = 12 V, B< Bon-2 mT, Setting of Vpp B > Bore +2 mT t Output Rise Time 3 - 75 400 ns Vop = 12 V, RL = 820 Ohm, Cy = 20 pF t Output Fall Time 3 - 50 400 ns Vop = 12 V, RL = 820 Ohm, CL =20 pF Rihuss Thermal Resistance Junction - - 150 200 KW Fiberglass Substrate case to Substrate Backside 30 mm x 10 mm x 1.5mm, SOT-89A pad size see Fig. 7 Rihsa Thermal Resistance Junction - - 150 200 KAW case to Soldering Point TO-92UA MICRONAS INTERMETALLHAL501...HAL506, HAL508 Magnetic Characteristics at Tj = ~40 C to +170 C, Vpp = 3.8 V to 24 V, Typical Characteristics for Vpp = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter 40C 25C 100 C 170C Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. On point Bon HAL5O1 | -0.8 | 0.65 | 25 0.35] 063 | 225 | -088] 059 | 25 -0.9 | 055 | 25 mT HAL502 | 1 3 5 1 2.75 | 45 0.95 | 26 4.4 0.9 24 43 mT HAL503 | 6.4 8.6 10.8 | 6 8 10 5.6 7.2 9.7 5.1 6.4 9.3 mT HAL504 | 10.3 | 13 157 | 95 12 145 | 9 WA 14.1 8.5 10.2 | 13.7 | mT HAL505 | 11.8 15 18.3 | 11 14 17 10.2 | 13 166 | 9.4 12 16.1 | mT HAL506 | 4.3 59 77 38 55 7.2 3.6 5.1 7 3.4 47 6.8 mT HAL508 | 15.5 | 19.2 | 21.9 | 15 18 20.7 | 139 | 1665] 20.4 | 127 | 153 | 20 mT Off point Borr HAL5O1 | -25 | -0.65/] 08 -2.25| 063} 035 | -25 | 0.59] 088 | -25 | -0.55| 09 mT HAL502 | -5 -3 -1 45 | -2.75}| -1 44 | -26 | -0.95] -43 | -24 | +09 | mT HAL503 ] -108|] -86 | -64 | -10 -8 6 ~97 | -72 | -56 | -93 | -64 | -51 | mT HAL504 | 5.3 7.5 9.6 5 7 9 46 645 | 875 | 42 5.9 8.5 mT HAL505 | -18.3 | 15 -11.8 | ~17 -14 -11 -16.6 | -13 10.2] -16.1] -12 ~9.4 | mT HAL506 | 2.1 3.8 5.4 2 3.5 5 185 | 33 4.9 1.7 3 47 mT HAL508 | 14 17 20 13.5 | 16 19 125 | 148 | 187 | 11.4 | 136 | 183 | mT Hysteresis Buys HAL501 | 0.5 1.3 2 0.5 1.25 | 19 05 118 | 185 | 05 11 1.8 mT HAL502 | 4.5 6 7.2 45 55 7 4 5.2 6.8 35 48 6.8 mT HAL503 | 14.6 17.2 | 206 | 136 | 16 18 12.3) 148 | 176 | 11 13.6 | 17.6 | mT HAL504 | 4.4 5.4 6.5 4 5 6.5 3.6 47 6.4 3.2 43 6.4 mT HAL505 | 26 30 34 24 28 32 22 26 31.3 | 20 24 31.3 | mT HALS506 | 1.6 2.1 2.8 1.5 2 27 1.2 1.9 2.6 1.0 17 2.6 mT HAL508 | 1.6 24 2.8 1.5 2 27 1.2 185 | 26 1.0 17 26 mT Magnetic Offset (Bon + Borry/2 HALS501 | - 0 - 1.3 | 0 1.3 - 0 - - 0 - mT HAL502 | 0 - 15 | 0 1.5 - 0 - - 0 - mT HAL503 | 0 - -15 | 0 15 - 0 - - 0 - mT HAL504 | - 10.1 - 7.2 95 Wa | - 875 | - - 8 - mT HAL505 | - 0 - -15 | 0 15 - 0 - - 3) - mT HAL506 | - 48 - 3 45 6.2 - 418 | - - 3.85 | - mT HALS08 | 18.1 | - 14 17 20 - 158 | - - 145 | - mT 5.0 Output Voltage ze a, . | AO: Boer min Buys Bon max __ 3975. 10 Fig. 6: Definition of magnetic switching points and Fig. 7: Recommended pad size SOT-89A hysteresis Dimensions in mm MICRONAS INTERMETALL 7HAL501...HAL506, HAL508 Note: In the following diagrams Magnetic switch points versus ambient temperature on pages 8 and 9, the curves for Bonmin, Bonmax, Borrmin, and Borrmax refer to junction temperature, whereas typical curves refer to ambient temperature. Magnetic switch points versus temperature mT HAL502 6 ~~ Bonmax Bon [Tare Borr a B 2 ontyp Bonmin 0 = Vpo = 3.8V Vpp = 4.5 V...24V TT Borrmax ~2 a Borrtyp ~4 _ eT Boremin -6 50 0 50 100 150 200C Ta Ty Magnetic switch points versus temperature mT HAL501 6 Bon Borr * 2 iad Vpo = a8 Vv Vpp = 4.5 V...24V -50 0 50 100 150 200C ~* Ta, Ty Magnetic switch points versus temperature mT HAL503 12 10 Bon Bore 6 _ Bonmin ~~ 4 Vop = 3.8 V 0 Vop = 4.5 V...24 V 2 4 Borrmax___ 6 -8 10 Borrmin -12 50 0 50 100 150 200C Ta Ty MICRONAS INTERMETALLHAL501...HAL506, HAL508 Magnetic switch points versus temperature Magnetic switch points versus temperature mT HAL504 mT HAL505 18 20 Bonmax 16 TTT Bon ~~ Bon ' Borr r~ | Bonmax Borr 1 = is 4 = 10 Bonmin 12 <= ~~. 5 beer = 10 | o=~_1 4 Bontyp Voo 38N ~ TE ~~ Bonmin Vv =4,5V...24V ~~ S_= ee 0 8 Borrmax be [rene ee -5 6 pst Borrtyp _ PT ~10 Borrmax 4 Borremin t _ Vpop = 3.8 V 2 po 15 : _ =4.5V... -s4- i 4.5 V...24 Y Bossmin 0 -20 50 0 50 100 150 200C -50 0 50 100 150 200C * Ta Ty Ta Ty Magnetic switch points Magnetic switch points versus temperature versus temperature mT HAL506 mT HAL508 8 25 Re | Bonmax Bon Bon ~~. | Bonmax Borr BorF 29 LO -rs 6 ~~ _Borrmax | ney ST a ~~, 1 [~~] Le ome a 5 Bor + = Bontyp 15 >> rc Bontyp FFmax ~~ Le ~ ~L OSS Borrtyp 4 Bo : ~~ Pr . Amn ~~ min Pa} ON | ah Oy 3 EK Borrtyp 10 OFF _ min 2 2orF a Vpo=3.8V 7 5 f f ' an Vpp = 3.8 V - Vpn = 4.5 V...24V Vp = 4.5 V...24V 0 0 -50 0 50 100 386150 = =200C Ta; Ty -50 0 50 100 150 200C Ta, Ty MICRONAS INTERMETALLHAL501...HAL506, HAL508 Supply current versus supply voltage mA HAL50x 5.0 45 Ibo 4.0 3.0 2.5 2.0 1.5 1.0 0.5 Supply current versus supply voltage mA HAL50x 25 20 Ipp 15 10 5 0 -5 -10 45-10-50 5 10 15 20 25 30 35V 4r Vop Supply current versus ambient temperature mA HAL50x 5 Ip 4 NO Q Vpp = 24V 3S vit tev N = 2 Vop = 3.8 V TN 1 0 Internal chopper frequency versus supply voltage kHz HAL50x 100 90 fosc 80 60 50 40 30 20 10 0 5 10 15 20 25 30V Voo 10 MICRONAS INTERMETALLHAL501...HAL506, HAL508 Internal chopper frequency versus supply voltage kHz HAL50x 400 90 fosc 80 60 50 40 30 20 10 ~ Vopo Internal chopper frequency versus ambient temperature kHz HAL50x 100 90 fose 80 Vpp = 3.8 V el Yor __ 60 7 Vop = 4.5 V...24V /|/ 50 40 30 20 10 50 0 50 100 =6150 =. 200C Output low voltage versus supply voltage mv HAL50x 400 1 Ip = 20 mA 350 Vor 300 |__| \. Ta= 170C 250 200 Ta = 100C 150|_\ Ta= 25C Ta =40C 100 50 0 5 10 #15 20 2 30V Voo Output low voltage versus supply voltage mv HAL50x 600 lo = 20 mA 500 Vou 400 300 \ NY Ta= 170C 200 PS Ta= 100C DN _| Ta = 25C t 100 ee Ta =40 C 0 3 4 5 6 7V MICRONAS INTERMETALL 11HAL501...HAL506, HAL508 Output low voltage versus ambient temperature mv HAL50x 400 Vop = 3.8 V VoL DD J 300 L Vpp = 4.5 V 2 Nino = 24 NA Ge 100 K- 50 0 50 100 =6150 =. 200C pA 104 103 toy 102 10! 10 10-1 10-2 10-3 10+ 10-5 10-6 Output high current versus output voltage HAL50x 15 20 25 30 35 V Vou Output leakage current versus ambient temperature HA HAL50x 102 101 f lou Von = 24V yf 10 ff} OY o J) Voy =13.8 V 1o Z| | A 10-5 / -50 0 50 100 150 200C 12 MICRONAS INTERMETALLHAL501...HAL506, HAL508 Vop Magnetic switch points Magnetic switch points versus supply voltage versus supply voltage mT HAL501 mT HAL501 3 3 Bon 5 Bay Bon Borr JON Borr 1 = 1 SEE 0 0 oS 1 Borr 7 1 Tan are 2 Ta = 25 C 2 Ta = 25 C -- Ta= 100C Ta= 100C Tp 74e 7" Ta = 170C 3 35 5 10 15 20 25 30 V 3 35 40 45 50 55 60V * Vopo ~ Vop Magnetic switch points Magnetic switch points versus supply voltage versus supply voltage mT HAL502 mT . HAL502 6 6 Bon Bon 4 4 Borr Borr Bon Bon 9 Yoo Sap. 2 SwRI I os Tan 06 Taz 40 0 0 | Ta = 25C 0 t Ta= 25C |- Ta= 100C |-~ Ta = 100C ~~ Ta = 170 C t+ Ta= 170C -2 - -2 ote Am ITN Eee af Tm ATIes Borr Borr -4 -4 a 6 3 35 40 45 50 55 60V * Vop MICRONAS INTERMETALL 13HAL501...HAL506, HAL508 Magnetic switch points versus supply voltage mT HAL503 12 Bon a Bon Borr A ed 4 Ts = 4 C 6 _ Ta =25 C L_ Ta= 100 C LTa= 170C 4 Aaa SO OS Borr -12 5 10 #15 20 2 30V ~ Voo Magnetic switch points versus supply voltage mT HAL503 12 Bo Bon N ~ 7 Borr 8 ~~ 4 . Ta = 0 C 0 Ta =25 C L_t%,= 100 C L~Ta= 170C 4 a<t_fllalTe - | a Borr -12 3 35 40 45 50 55 60V Vbo Magnetic switch points versus supply voltage mr HAL504 18 16 Bon Borr T=-40C | Borr Ta= 25" 2 _ = Ta= 100C + Ta= 170C 0 5 10 15 20 2 30V ~ Vop Magnetic switch points versus supply voltage mT HAL504 18 16 Bon Borr Ta= C Ta= 25) 2 = Ta= 100C +- Ta = 170 C 3 35 40 45 50 55 60V Vopo 14 MICRONAS INTERMETALLHAL501...HAL506, HAL508 Magnetic switch points Magnetic switch points versus supply voltage versus supply voltage mT HAL505 mT HAL505 20 20 Bon 15 Bon 15 Borr Borr 10 10 5 5 0 0 -5 5 -10 -10 15 -15 -20 -20 3 35 40 45 50 55 60V _ Vop Magnetic switch points Magnetic switch points versus supply voltage versus supply voltage mT HAL506 mT HAL506 8 8 Bon Bon Borr : Borr Bon 6 Bon 6 Lf Let RS N ON ae ed ce, | nun umeser vofene neve venir te ee Lee rate aur seen 4 4 o ss ey ee ee Fe ae " a ee | cree eee Lene Pf ee Ld Borr Borr 2 . Ta = 40 C 2 _ Ta = ~40 C T= 285 c | Ta= 25 rc =~ Ta= 100C 7- Ta= 100C won bem Ta = 170 C L- poinge 0 0 | 0 5 10 15 20 2 30V 3 35 40 45 50 55 60V Vpp _ Voo MICRONAS INTERMETALL 15HAL501...HAL506, HAL508 Magnetic switch points versus supply voltage mr HAL508 25 Bon BorF 29 15 10 5 0 0 5 10 15 20 25 30 V * Vop Spectrum of supply current dByA HAL50x 30 | Vpp=12V Ta = 25C 20 -+ Quasi-Peak- lop \ Measurement max. spurious 10 Y signals \ \ \ 0 x \ \ -10 \ \ \ ~20 \. \ \ \ -30 0.01 0.10 1 10 100 1000 MHz __ f Magnetic switch points versus supply voltage mT HAL508 25 Bon Borr 20 15 10 5 0 3 35 40 45 50 55 6.0V Vop Spectrum at supply voltage dBpv HALS5Ox 80 Vp=12V Ta = 25C 70 Quasi-Peak- Vop Measurement test circuit 2 60 N NJ 50 N \ max. spurious \ signals 40 T \ 30 N \ 20 \ \ \ 10 \ 0 \ 0.01 0.10 1 10 100 1000 MHz 16 MICRONAS INTERMETALLHAL501...HAL506, HAL508 Application Note For electromagnetic immunity, it is recommended to ap- ply a 4.7 nF capacitor between Vpp (pin 1) and Ground (pin 2). For automotive applications, a 220 series resistor to pin 1 is recommended. The series resistor and the capacitor should be placed as close as possible to the IC. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature Ty) is higher than the temperature outside the package (ambient tem- perature Ta). Ty=Ta+ AT At static conditions, the following equations are valid: for SOT-89A: AT=I!Ipp* Vpp* Rihuss for TO-92UA: AT=Ipp* Vpp * Rita For typical values, use the typical parameters. For worst case calculation, use the max. parameters for Ipp and Rth, and the max. value for Vopp from the application. Test Circuits for Electromagnetic Compatibility Test pulses Veyc corresponding to DIN 40839. Ry 220 2 = < 9 o a rc 1 Vemc [rete Vp r | , { ! [ poo 47 nF | | 720 pF L ve Fig. 8: Test circuit 2: test procedure for class A ooo Fig. 9: Test circuit 1: test procedure for class C MICRONAS INTERMETALL 17HAL501...HAL506, HAL508 Interferences conducted along supply lines in 12 V onboard systems Product standard: DIN 40839 part 1 Pulse Level U,inV Test Puises/ Function Remarks circuit Time Class 1 IV -100 1 5000 Cc 5 s pulse interval 2 IV 100 1 5000 Cc 0.5 s pulse interval 3a IV 150 2 ih A 3b IV 100 2 th A 4 IV 7 2 5 A 5 IV 86.5 1 10 Cc 10 s pulse interval Electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines Product standard: DIN 40839 part3 Pulse Level U,inV Test Pulses/ Function Remarks circuit Time Class 1 IV -30 2 500 A 5's pulse interval 2 IV 30 2 500 A 0.5 s pulse interval 3a IV 60 2 10 min A 3b IV 40 2 10 min A Radiated Disturbances Product standard: DIN 40839 part4 Test Conditions Temperature: Room temperature (22...25 C) Supply voltage: 13V Lab Equipment: TEMcell 220 MHz (VW standard) with adaptor board 455 mm, device 80 mm over ground Frequency range: 5...220 MHz; 1 MHz steps ~ Test circuit 2 with Ry = 1.2 kQ tested with static magnetic fields Tested Devices and Results Type Field Modulation | Result Strength HAL 50x > 200 V/m - output voltage stable on the level high or low) HAL 50x > 200 V/m 1kHz 80%] output voltage stable on the level high or low) 1) low level < 0.4 V, high level > 90% of Vpp 18 MICRONAS INTERMETALLHAL501...HAL506, HAL508 MICRONAS INTERMETALL 19HAL501...HAL506, HAL508 Data Sheet History 1. Final data sheet: HAL501...HAL506, HAL508 Hall Effect Sensor ICs, May 5, 1997, 6251-405-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice @ intermetall.de Internet: http://www.intermetall.de Printed in Germany by Simon Druck GmbH & Co., Freiburg (05/97) Order No. 6251-405-1DS All information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shail they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are ex- clusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. How- ever, our prior consent must be obtained in all cases. 20 MICRONAS INTERMETALL