2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.220.05 V 10 mA Drain power dissipation (Ta = 25C) PD (Note 1) 150 mW Tj 125 C Tstg -55~125 C Junction Temperature Storage temperature range Note: 0.4 -20 IG Gate Current 0.80.05 VGDO Gate-Drain voltage Unit 1 0.4 Rating 0.80.05 3 2 0.50.05 Symbol 1.20.05 Characteristic 1.20.05 0.320.05 Absolute Maximum Ratings (Ta=25C) 0.130.05 * Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1.Drain 2.Source 3.Gate VESM JEDEC - JEITA - TOSHIBA Note 1: Mounted on FR4 board 2-1L1C Weight: 1.5mg (typ.) 0.5mm 0.45mm 0.45mm 0.4mm IDSS CLASSIFICATION A-Rank 140~240A B-Rank 210~350A BK-Rank 210~400A C-Rank 320~500A Marking Equivalent Circuit D Type Name 8 IDSS Classification Symbol A :A -Rank B :B-Rank BK-Rank C :C-Rank G S 1 2007-11-01 2SK4059MFV Electrical Characteristics (Ta=25C) Characteristic Symbol Min Typ. Max A 140 240 B 210 350 BK 210 400 C 320 500 A 125 260 B 190 370 BK 190 420 C 290 500 VGS(OFF) VDS = 2 V, ID = 1A -0.1 -1.0 V VDS = 2 V,VGS = 0V 1.35 1.85 mS -20 V 4.0 pF A -1.2 +0.9 B -0.2 +1.4 BK -0.2 +1.7 C +0.5 +1.8 0 -1 A -0.6 -1.1 B -0.8 -1.7 BK -1.1 -2.0 C -1.4 -3.2 A 33 75 B 38 80 BK 40 85 C 42 90 A 1.3 B 0.6 BK 0.5 C 0.1 100 200 Drain Current IDSS Drain Current ID Gate-Source Cut-off Voltage Forward transfer admittance Gate-Drain Voltage |Yfs| VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2k,Cg = 5pF V(BR)GDO IG=-10A Input capacitance Ciss Voltage Gain Gv Delta Voltage Gain Delta Voltage Gain Test Condition DGv(f) DGv(V) Noise Voltage VN Total Harmonic Distortion THD Time Output Stability tos VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz,vin=100mV VDD = 2V, RL= 2.2k,Cg = 5pF,f = 1kHz~100Hz,vin=100mV VDD = 2V~1.5V, RL= 2.2k,Cg = 5pF,f = 1kHz, vin=100mV VDD = 2V, RL= 1k,Cg = 10pF,Gv=80dB, A-Curve Filter VDD = 2V, RL= 2.2k,Cg = 5pF, f = 1kHz, vin=50mV VDD = 2V, RL= 2.2k,Cg = 5pF Unit A A dB dB dB mV % ms Time Output Stability Test Method a) TEST CIRCUIT b) TEST SIGNAL 2.2k VDD 2V VDD=2.0V 50% Vout 0V VDD-ID*RL 90% 5pF Vout 0V tos 2 2007-11-01 2SK4059MFV ID - VGS 600 IDSS=470A ID 400 300 Drain Current ID Drain Current (A) VDS=2V Common Source (A) 500 IDSS=250A 200 100 0 -1.0 IDSS=170A -0.8 -0.6 -0.4 -0.2 400 IDSS 500 Common Source Ta = 25 C 0 200 (dB) DGv(V) 300 Drain Current 100 200 300 400 IDSS 500 600 500 600 (A) DGv(V)- IDSS Delta Voltage Gain Voltage Gain Gv (dB) -100 400 IDSS 500 600 DGv:VDD=2V1.5V Cg=5pF RL= 2.2k, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V -2.5 -2.0 Common Source Ta = 25C -1.5 -1.0 -0.5 0 100 VGS (V) VGS(OFF):VDS=2V ID = 1A IDSS:VDS=2V VGS=0V -3.0 0.5 0 0 -200 Drain Current 1.0 0 -0.2 -300 (A) IDSS: VDS=2V VGS=0V Common Source Ta = 25C 1.5 -0.4 -400 0 600 Gv:VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV 2.0 -0.6 VGS(OFF) - IDSS Gv- IDSS 2.5 -0.8 -500 Gate-Source Cut-off Voltage VGS(OFF) (V ) Forward transfer admittance |Yfs| (mS) Drain Current Ta=-40 Gate - Source voltage |Yfs|:VDS=2V VGS=0V IDSS: VDS=2V VGS=0V Common Source Ta = 25 C 300 Ta=25 200 VGS (V) 2 200 Ta=85 300 0 -1.0 |Yfs| - IDSS 100 400 0 3 1 500 100 Gate - Source voltage 0 ID - VGS 600 VDS=2V Common Source Ta = 25 C 0 100 200 300 Drain Current (A) 3 400 IDSS (A) 2007-11-01 2SK4059MFV Gv - Cg VN - IDSS 10 60 IDSS=470A (mV) 50 0 VN 40 -5 Noise Voltage Voltage Gain Gv (dB) 5 30 IDSS=170A VDD=2V Cg=5pF RL= 2.2k, f=1kHz vin=100mV Common Source Ta = 25C -10 -15 -20 0 2 4 6 Electret Capacitance 8 Cg VN:VDD=2V Cg=10pF RL= 1k f=1kHz 80dB AMP A-Curve Filter 20 IDSS: VDS=2V VGS=0V Common Source Ta = 25C 10 0 10 0 500 600 (A) (pF) Ciss 0.5 0 5 1 Drain Current IDSS Input capacitance Total Harmonic Distortion THD (%) 1.0 300 400 Ciss - VDS 1.5 200 300 10 THD:VDD=2V Cg=5pF RL= 2.2k f=1kHz vin=50mV IDSS: VDS=2V VGS=0V Common Source Ta = 25C 100 200 Drain Current (pF) THD- IDSS 2.0 0 100 400 IDSS 500 600 VGS=0V f=1kHz Common Source Ta = 25C 1 Drain - Source voltage (A) 4 10 5 VDS (V) 2007-11-01 2SK4059MFV 5 2007-11-01 2SK4059MFV RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01