STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 0.0017 typ., 180 A, STripFETTM F7 Power MOSFETs in H2PAK-2 and H2PAK-6 Datasheet - production data Features Order code TAB TAB VDS RDS(on) max ID 80 V 0.0021 180 A STH275N8F7-2AG STH275N8F7-6AG 2 7 3 1 1 H2PAK-2 * Designed for automotive applications and AEC-Q101 qualified H2PAK-6 * Among the lowest RDS(on) on the market * Excellent figure of merit (FoM) * Low Crss/Ciss ratio for EMI immunity Figure 1. Internal schematic diagram ' 7$% * High avalanche ruggedness Applications * Switching applications Description * These N-channel Power MOSFETs utilize STripFETTM F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Table 1. Device summary Order code Marking Package H2PAK-2 STH275N8F7-2AG 275N8F7 STH275N8F7-6AG March 2016 This is information on a product in full production. Packaging H2PAK-6 DocID027223 Rev 3 Tape and reel 1/19 www.st.com Contents STH275N8F7-2AG, STH275N8F7-6AG Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Test circuits 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 .............................................. 8 5.1 H2PAK-2, STH275N8F7-2AG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2 H2PAK-6, STH275N8F7-6AG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage 20 V ID(1) Drain current (continuous) at TC = 25 C 180 A ID (1) Drain current (continuous) at TC = 100 C 180 A Drain current (pulsed) 720 A Total dissipation at TC = 25 C 315 W Single pulse avalanche energy 1.16 J IDM (2) PTOT (3) (4) EAS TJ Operating junction temperature range Tstg Storage temperature range C -55 to 175 C 1. Limited by package 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-c 4. Starting Tj = 25C, Id = 65 A, Vdd = 50 V Table 3. Thermal resistance Symbol Parameter Rthj-case Rthj-pcb (1) Value Unit Thermal resistance junction-case 0.48 C/W Thermal resistance junction-pcb 35 C/W 2 1. When mounted on FR-4 board of 1 inch , 2oz Cu DocID027223 Rev 3 3/19 19 Electrical characteristics 2 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS= 0 V, ID = 1 mA Min. Typ. Max. 80 Unit V VGS = 0 V, VDS = 80 V 1 A VGS = 0 V, VDS = 80 V, TC=125 C (1) 100 A 100 nA 4.5 V IDSS Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = +20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 A RDS(on) Static drain-source on- resistance VGS= 10 V, ID= 90 A 2.5 0.0017 0.0021 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS=0 V, VDS =50 V, f=1 MHz VDD=40 V, ID = 180 A VGS =10 V Figure 14 Min. Typ. Max. Unit - 13600 - pF - 2050 - pF - 236 - pF - 193 - nC - 96 - nC - 46 - nC Min. Typ. Max. Unit - 56 - ns - 180 - ns - 98 - ns - 42 - ns Table 6. Switching times Symbol td(on) tr td(off) tf 4/19 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD=40 V, ID= 90 A, RG=4.7 , VGS= 10 V Figure 13 Fall time DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 180 A Source-drain current (pulsed) - 720 A 1.2 V Forward on voltage VGS=0 V, ISD = 90 A - trr Reverse recovery time - 78 ns Qrr Reverse recovery charge - 182 nC IRRM Reverse recovery current ISD = 180 A, di/dt = 100 A/s, VDD=64 V, Tj=150 C - 4.7 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% DocID027223 Rev 3 5/19 19 Electrical characteristics (curves) 3 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15670v1 ID (A) AM15684v1 K d=0.5 is e a n) ar i s DS(o h t in ax R ion m at by r e d Op ite Lim 100 10 0.2 0.1 100s 0.1 0.05 0.02 0.01 1ms 1 10ms Single pulse Tj=175C Tc=25C Single pulse 0.1 0.1 10 1 VDS(V) Figure 4. Gate charge vs gate-source voltage AM15683v1 VGS (V) VDD=40V ID=180A 12 0.01 10 -5 10 -4 10 -2 10 -3 tp(s) Figure 5. Output characteristics ID (A) 350 AM15672v1 VGS=8, 9, 10V 7V 300 10 250 8 200 6 150 6V 4 100 2 50 5V 0 0 0 50 200 Qg(nC) 150 100 Figure 6. Transfer characteristics 0 2 4 6 8 VDS(V) Figure 7. Normalized V(BR)DSS vs temperature AM15682v1 AM15681v1 V(BR)DSS ID (A) (norm) 350 VDS=2V ID=1 mA 1.04 300 250 1.02 200 1 150 100 0.98 50 0 0 6/19 1 2 3 4 5 6 7 8 9 VGS(V) 0.96 -75 -50 -25 0 25 50 75 100 125 150 TJ(C) DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics (curves) Figure 8. Static drain-source on-resistance AM15674v1 RDS(on) (m) VGS=10V 1.74 Figure 9. Capacitance variations C (pF) 16000 AM15676v1 14000 Ciss 12000 1.72 10000 8000 1.70 6000 4000 1.68 2000 0 0 1.66 0 20 40 60 80 100 120 140 160 180 ID(A) Figure 10. Source-drain diode forward characteristics AM15680v1 VSD (V) 10 20 30 40 50 60 Coss Crss VDS(V) Figure 11. Normalized gate threshold voltage vs temperature AM15677v1 VGS(th) (norm) 1.2 TJ=-50C 1 1.1 ID=250A 1 0.9 0.9 TJ=25C 0.8 0.8 TJ=150C 0.7 0.7 0.6 0.6 0.5 0.5 0 20 40 60 80 100 120 140 160 ISD(A) 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ(C) Figure 12. Normalized on-resistance vs temperature AM15678v1 RDS(on) (norm) 2 ID=90 A VGS=10 V 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 TJ(C) DocID027223 Rev 3 7/19 19 Test circuits 4 STH275N8F7-2AG, STH275N8F7-6AG Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F IG=CONST VDD VGS 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/19 0 DocID027223 Rev 3 10% AM01473v1 STH275N8F7-2AG, STH275N8F7-6AG 5 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. DocID027223 Rev 3 9/19 19 Package mechanical data 5.1 STH275N8F7-2AG, STH275N8F7-6AG H2PAK-2, STH275N8F7-2AG Figure 19. HPAK-2 drawing B' 10/19 DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG Package mechanical data Table 8. HPAK-2 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 - L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0 8 DocID027223 Rev 3 11/19 19 Package mechanical data STH275N8F7-2AG, STH275N8F7-6AG Figure 20. HPAK-2 recommended footprint (in mm) B' 12/19 DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG 5.2 Package mechanical data H2PAK-6, STH275N8F7-6AG Figure 21. HPAK-6 drawing 8159693_Rev_F DocID027223 Rev 3 13/19 19 Package mechanical data STH275N8F7-2AG, STH275N8F7-6AG Table 9. HPAK-6 mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 - 14/19 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0 8 DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG Package mechanical data Figure 22. HPAK-6 recommended footprint (dimensions are in mm) footprint_Rev_F DocID027223 Rev 3 15/19 19 Packaging information 6 STH275N8F7-2AG, STH275N8F7-6AG Packaging information Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 16/19 DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG Packaging information Figure 24. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 10. Tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027223 Rev 3 Min. Max. 330 13.2 26.4 30.4 17/19 19 Revision history 7 STH275N8F7-2AG, STH275N8F7-6AG Revision history Table 11. Document revision history 18/19 Date Revision Changes 27-Nov-2014 1 First release. 05-Mar-2015 2 Document status promoted from preliminary to production data. Updated title and feature in cover page. 10-Mar-2016 3 Updated Table 4. Minor text changes. DocID027223 Rev 3 STH275N8F7-2AG, STH275N8F7-6AG IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. 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