BCP69
1 Jul-23-2001
PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
VPS05163
123
4
Type Marking Pin Configuration Package
BCP69
BCP69-10
BCP69-16
BCP69-25
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-emitter voltage VCES 25 V
Collector-base voltage VCBO 25 V
Emitter-base voltage VEBO 5
DC collector current IC1 A
Peak collector current ICM 2
Base current IB100 mA
Peak base current IBM 200
Total power dissipation, TS = 124 °C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCP69
2 Jul-23-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0 V(BR)CEO 20 - - V
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 V(BR)CES 25 - -
Collector-base breakdown voltage
IC = 10 µA, IB = 0 V(BR)CBO 25 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 25 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 100 µA
DC current gain 1)
IC = 5 mA, VCE = 10 V hFE 50 - - -
DC current gain 1)
IC = 500 mA, VCE = 1 V
BCP69
BCP69-10
BCP69-16
BCP69-25
hFE
85
85
100
160
-
100
160
250
375
160
250
375
DC current gain 1)
IC = 1 A, VCE = 1 V hFE 60 - -
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA VCEsat - - 0.5 V
Base-emitter voltage 1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE(ON)
-
-
0.6
-
-
1
AC Characteristics -
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz - 100
fTMHz
1) Pulse test: t ≤=300µs, D = 2%
BCP69
3 Jul-23-2001
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00283BCP 69
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = f(TS)
0 20 40 60 80 100 120 °C 150
TS
0
0.2
0.4
0.6
0.8
1
1.2
W
1.6
Ptot
DC current gain hFE = f (IC)
VCE = 1V
10
EHP00285BCP 69
04
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
2
10
˚C
5
100
25 ˚C
˚C
-50
Collector cutoff current ICBO = f (TA)
VCB = 25V
0
10
EHP00284BCP 69
A
T
150
0
5
10
Ι
CBO nA
50 100
1
10
2
10
4
10
˚C
typ
max
103
BCP69
4 Jul-23-2001
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0
10
EHP00287BCP 69
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
˚C
100
25
˚C
-50
˚C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00286BCP 69
CEsat
V
0.4 V 0.8
0
10
1
10
2
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
˚C
100
25
˚C
-50
˚C
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00288BCP 69
-6 -5
10
1
10s
-1
10
2
10
3
10
5
5
10
-4
10
-3
10
-2
10
1
0.0
0.2
0.1
0.05
0.02
0.01
0.005
=
D
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
