F Semiconductor BET Moy fleets 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. IRFR420, IRFU420 July 1999 File Number 2411.3 Features * 2.5A, 500V * TDS(ON) = 3.0002 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds Linear Transfer Characteristics * High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Ordering Information Symbol PART NUMBER PACKAGE BRAND D IRFR420 TO-252AA IRFR420 IRFU420 TO-251AA IRFU420 G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., IRFR4209A. Ss Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN DRAIN GATE (FLANGE) GATE 4 ee DRAIN (FLANGE) DRAIN SOURCE 4-407 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-800-4-HARRIS or 407-727-9207 | Copyright Harris Corporation 1999IRFR420, [RFU420 Absolute Maximum Ratings = T = 25C, Unless Otherwise Specified IRFR420, IRFU420 ~ UNITS Drain to Source Voltage (Note 1).......00 0... ee Vos 500 Vv Drain to Gate Voltage (Rag = 20kQ) (Note 1)... 0... ee VpGR 500 Vv Continuous Drain Current ... 0. eee ID 2.5 A Te = 100C ne eee e nnn b nett e ees ID 1.6 A Pulsed Drain Current (Note 3)... 0.0... 0 eee IDM 8 A Gate to Source Voltage . 6 eee ee Ves +20 v Maximum Power Dissipation... 2.2... 0.0.0. eee eae Pp 50 WwW Linear Derating Factor... 6... tee 0.4 wc Single Pulse Avalanche Energy Rating (Note 4)........0.. 0.0.00. cee eee Eas 210 mJ Operating and Storage Temperature... 6... ee Ty, Tsta -55 to 150 C Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s.... 0... eee Th 300 sd Package Body for 10s, See Techbrief 334......0. 2.0.0 eee Tpkg 260 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Ty = 25C to 125C. Electrical Specifications T = 25C, Unless Otherwise Specitied PARAMETER SYMBOL TEST CONDITIONS MIN | TYP | MAX | UNITS Drain to Source Breakdown Voltage BVpss_ | Ip = 250A, Vag = OV (Figure 10) 500 - - Vv Gate Threshold Voltage VasctH) | Vas = Vos. Ip = 250A 2.0 - 4.0 Vv Zero Gate Voltage Drain Current Ipss Vps = Rated BVpss, Vas = 0V - - 25 LA Vps = 0.8 x Rated BVpgg, Vag = OV, Ty = 125C - - 250 pA On-State Drain Current (Note 2) ID(ON) =| YDS > !D(ON) X TDS(ON)MAX: Vas = 10V 2.5 - - A Gate to Source Leakage Current lass Vas = 20V - - +100 nA Drain to Source On Resistance (Note 2) 'DS(ON) |'!p = 1.3A, Vas = 10V (Figures 8, 9) - 2.9 3.0 Q Forward Transconductance (Note 2) Sts Vps 2 10V, Ip = 2.0A (Figure 12) 1.5 2.2 - $s Turn-On Delay Time tan) | Ypp = 250V, Ip = 2.5A, Rag = 18, RL = 1009, - 10 15 ns Rise Time tr MOSFET Switching Times are Essentially - 12 18 ns Turn-Off Delay Time ta(OFF) | Independent of Operating Temperature - 28 42 ns Fall Time tf - 12 18 ns Total Gate Charge QgtoT) | Vas = 10V, Ip = 2.5A, Vpg = 0.8 x Rated BVpss - 13 19 nC (Gate to Source + Gate to Drain) I@(REF) = 1.5mA (Figure 14) Q Gate Charge is Essentially Independent of gs Gate to Source Charge g Operating Temperature - 2.2 3.3 nG Gate to Drain Miller Charge Qga - 6.8 10 nG Input Capacitance Ciss Vos = 25V, Veg = OV, f = 1MHz - 350 - pF Output Capacitance Coss (Figure 11) - 54 - pF Reverse Transfer Capacitance Crss - 9.6 - pF Internal Drain Inductance Lp Measured From the Drain | Modified MOSFET - 4.5 - nH Lead, 6.0mm (0.25in) Symbol Showing the From Package to Center | Internal Device of Die Inductances Internal Source Inductance Ls Measured From the - - 7.5 - nH Source Lead, 6.0mm (0.25in) From Package to Source Bonding Pad Thermal Resistance, Junction to Case ReJc - - 2.5 | C/W Thermal Resistance, Junction to Ambient RoJaA Mounted on FR-4 Board with Minimum Mounting - - 110 | c/w pad 4-408 BARRISIRFR420, [RFU420 Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN | TYP | MAX | UNITS Continuous Source to Drain Current Isp Modified MOSFET Symbol D - - 2.5 A Pulse Source to Drain Current IspM Showing the Integral Re- - - 8 A (Note 3) verse P-N Junction Rectifier Ss Source to Drain Diode Voltage (Note 2) Vsp Ty = 25C, Isp = 2.5A, Vag = OV (Figure 13) - - 1.6 Vv Reverse Recovery Time ter Ty = 25C, Isp = 2.5A, digp/dt = 100A/ys 130 270 540 ns Reverse Recovery Charge QrRR Ty = 25C, Isp = 2.5A, digp/dt = 100A/us 0.57 1.2 2.3 ve NOTES: 2. Pulse test: pulse width < 300us, duty cycle < 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. Vpp = 50V, starting Ty = 25C, L = 60MH, Re = 25Q, peak lag = 2.5A. Typical Performance Curves Unless Otherwise Specified N \ 1.2 2.5 oc wo4 5 .O a 2.0 Fa < 5 ~ 2 0.8 z Ww z ao 1.5 9 5 E 06 5 a z A a 1.0 = a a (4 & = w + 0.5 s a 5 0.2 a 0 0 0 50 100 150 25 Tc, CASE TEMPERATURE (C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 0.1 Zosc, THERMAL IMPEDANCE SINGLE PULSE 104 10 10 50 75 Tc, CASE TEMPERATURE (C) CASE TEMPERATURE NOTES: 100 125 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs DUTY FACTOR: D = ty/tp PEAK Ty = Ppw X Zouc + Tc 0.1 ty, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 1 ty te 10 4-409 BARRISIRFR420, [RFU420 Typical Performance Curves Ip, DRAIN CURRENT (A) Ip, DRAIN CURRENT (A) 'ps(oNn): DRAIN TO SOURCE OPERATION IN THIS AREA IS LIMITED BY rps(on) Ty = MAX RATED SINGLE PULSE A -10 -100 -1000 Vps, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 5 PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX 0 4 8 12 16 20 Vps; DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 0 PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX > a ao ON RESISTANCE (S) Nn 0 2 4 6 8 10 Ip, DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT Unless Otherwise Specified (Continued) PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX oy oa Vag = 5.5V Nn Ip, DRAIN CURRENT (A) = 0 50 100 150 200 250 Vps;, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 0 PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX Vps 2 50V = Ty = 150C Ty = 25C Ip, DRAIN CURRENT (A) 0 2 4 6 8 10 Vas, GATE TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 3.0 PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX Vgg = 10V, Ip = 1.3A N bh N \ \ \ \ NORMALIZED DRAIN TO SOURCE ON RESISTANCE \ -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 4-410 BARRISIRFR420, [RFU420 Typical Performance Curves unless Otherwise Specified (Continued) 1.25 750 Ip = 250A Vas = OV, f = 1MHz W ciss = Cas +Cep oc 145 600 RSS = Cep 38 LT c Cogs ~ Cps + Cap = | c eo | a > O 1.05 a 450 z 2 aA a o FS aA EF ~ oO 2 6 0.95 a 300 cia 3 3 8 (0.85 150 Pa 0.75 0 -40 0 40 80 120 160 1 2 5 10 2 5 102 Ty, JUNCTION TEMPERATURE (C) Vps; DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VOLTAGE vs JUNCTION TEMPERATURE 0 100 PULSE DURATION = 80us PULSE DURATION = 80us DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX Ty = 25C = o Ty = 150C Ty = 150C Ofs, TRANSCONDUCTANCE (S) Isp, SOURCE TO DRAIN CURRENT (A) 0 0.8 1.6 24 3.2 4.0 O16 0.3 0.6 0.9 1.2 1.5 Ip, DRAIN CURRENT (A) Vgp, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 Vps = 400V Vps = 250V Vps = 100V = = ao Nn a Vas, GATE TO SOURCE (V) oy 0 4 8 12 16 20 Qg(roT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-411 BARRISIRFR420, [RFU420 Test Circuits and Waveforms Vps L VARY tp TO OBTAIN * REQUIRED PEAK las Re i A = Vpp _ Ves . DUT __ tp ov las 0.012 AAA - vv FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT AAA vv a r Rg IL 1 FIGURE 17. SWITCHING TIME TEST CIRCUIT Vos CURRENT [ CeOPLyS REGULATOR ) uv SAME TYPE AS DUT = 12V | BATTERY | | a L4 DUT Vps = Ip CURRENT SAMPLING RESISTOR Ig CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT BVpss a tp Vps / las vl _ ee / \ Vpp f 7 \ / \ \ 7 7 \ , \ 7 \ O - Gem te | tav |< FIGURE 16. UNCLAMPED ENERGY WAVEFORMS torr |* ta(OFF)| | tt [= Vos = Ps F 90% o--- 10% 90% Vas 50% = _ PULSE WIDTH 0 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS IG@(REF) FIGURE 20. GATE CHARGE WAVEFORMS 4-412 BARRIS