ZLLS2000
Document number DS32060 Rev. 7 2
1 of 5
www.diodes.com
July 2016
© Diodes Incorporated
ZLLS2000
40V HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
Product Summary
VRRM (V)
IO(A)
IR Max (A)
@ 30V +25°C
40
2
40
Description and Applications
A surface mount Schottky Barrier Diode featuring low forward voltage
drop suitable for high frequency rectification and reverse voltage
protection.
DC DC Converters
Strobes
Mobile Phones
Charging Circuits
Motor Control
Features and Benefits
Low Equivalent on Resistance
Extremely Low Leakage
Low VF, Fast Switching Schottky
Package Thermally Rated to +150°C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe;
(Lead-Free Plating) Solderable per MIL-STD-202, Method 208
Weight: 0.016 grams (Approximate)
Ordering Information
Device
Packaging
Shipping
ZLLS2000TA
SOT26
3,000/Tape & Reel
ZLLS2000TC
SOT26
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For Packaging Details, go to our website at http:// www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Pin Out
Device Symbol
SOT-26
Top View
C
C
A
C
C
A
LL20 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
ZLLS2000
Document number DS32060 Rev. 7 2
2 of 5
www.diodes.com
July 2016
© Diodes Incorporated
ZLLS2000
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Continuous Reverse Voltage
VRRM
40
V
Forward Current
IF
2.2
A
Peak Repetitive Forward Current
Rectangular Pulse Duty Cycle
IFPK
3.55
A
Non Repetitive Forward Current t 100μs
t 10ms
IFSM
36
12
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation @TA = +25°C
Single Die Continuous
Single Die Measured at t < 5 secs
PD
-
1.1
1.71
-
W
W
Junction to Ambient (Note 5)
RθJA
113
°C/W
Junction to Ambient (Note 6)
RθJA
73
°C/W
Storage Temperature Range
TSTG
-55 to +150
°C
Junction Temperature
TJ
+150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device mounted on FR-B PCB measured at t < 5secs.
020 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Derating Curve
Temperature (OC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
20
40
60
80
100
120 TAMB=25OC
Rectangular Pulse
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (OC/W)
Pulse Width (s)
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
V(BR)R
40
-
-
V
IR = 1mA
Forward Voltage (Note 7)
VF
-
285
-
mV
IF = 50mA
-
305
-
IF = 100mA
-
335
-
IF = 250mA
-
365
390
IF = 500mA
-
403
430
IF = 1A
-
433
490
IF = 1.5A
-
461
540
IF = 2A
-
509
600
IF = 3A
-
450
-
IF = 2A,TA = +100°C
Reverse Current
IR
-
-
10
0.6
40
-
μA
mA
VR = 30V
VR = 30V, TA = +85°C
Diode Capacitance
CD
-
65
-
pF
f = 1MHz, VR = 30V
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
-
-
6
685
-
-
ns
nC
Switched from IF = 500mA to VR = 5.5V
Measured @ IR 50mA. di /dt = 500mA/ ns.
RSOURCE = 6Ω; RLOAD = 10Ω
Note: 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle < 2%.
ZLLS2000
Document number DS32060 Rev. 7 2
3 of 5
www.diodes.com
July 2016
© Diodes Incorporated
ZLLS2000
0.0 0.2 0.4 0.6
100n
10μ
100μ
1m
10m
100m
1
10
010 20 30 40
10p
100p
1n
10n
100n
10μ
100μ
1m
10m
100m
0.01 0.1 1 10
20
40
60
80
100
120
140
160
0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
110
20
40
60
80
100
120
140
160
100m 110
0
50
100
150
200
250
300
350
400
150oC
85oC
25oC
-55oC
IF v VF
IF - Forward Current (A)
VF - Forward Voltage (V)
-15oC
-55oC
+25oC
+85oC
+150oC
IR v VR
IR - Reverse Current (A)
VR - Reverse Voltage (V)
Rth=113oC/W
Rectangular Pulse
D = 1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
TC v IF(AV)
TJ - Initial Junction Temp (A)
IF(PK) - Peak Fwd Current (A)
TJ=150oC
Rectangular Pulse
D = 1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
PF(AV) v IF(PK)
PF(AV) - Avg Power Diss (W)
IF(PK) - Peak Fwd Current (A)
TJ=150oC
Rth(j-a) = 10oC/W
Rth(j-a) = 50oC/W
Rth(j-a) = 113oC/W
Rth(j-a) = 200oC/W
Rth(j-a) = 300oC/W
TA v VR
TA - Max Ambient Temp (oC)
VR - Continuous Reverse Voltage (V)
f = 1MHz
CD v VR
VR - Reverse Voltage (V)
CD - Diode Capacitance (pF)
100μ
10μ
1μ
100μ
10μ
1μ
ZLLS2000
Document number DS32060 Rev. 7 2
4 of 5
www.diodes.com
July 2016
© Diodes Incorporated
ZLLS2000
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
c
0.10
0.20
0.15
D
2.90
3.10
3.00
e
-
-
0.95
e1
-
-
1.90
E
2.70
3.00
2.80
E1
1.50
1.70
1.60
L
0.35
0.55
0.40
a
-
-
a1
-
-
All Dimensions in mm
Dimensions
Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
C1
Y1 G
X
Y
C
ZLLS2000
Document number DS32060 Rev. 7 2
5 of 5
www.diodes.com
July 2016
© Diodes Incorporated
ZLLS2000
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(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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