AUIRFP4409
HEXFET® Power MOSFET
D
S
G
TO-247AC
G D S
Gate Drain Source
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized device de-
sign that HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for
use in Automotive and a wide variety of other applications.
Ordering Information
Base part number Package Type Standard Pack Complete Part Number
Form Quantity
AUIRFP4409 TO-247AC Tube 25 AUIRFP4409
VDSS 300V
RDS(on) typ. 56m
max 69m
ID 38A
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27
IDM Pulsed Drain Current  152
PD @TC = 25°C Maximum Power Dissipation 341 W
Linear Derating Factor 2.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally limited) Single Pulse Avalanche Energy  541mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175
°C
Soldering Temperature, for 10 seconds
(1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.44
°C/W
RCS Case-to-Sink, Flat Greased Surface 0.24 –––
RJA Junction-to-Ambient  ––– 40
S
G
D
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.
1 www.irf.com © 2013 International Rectifier July 10, 2013
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRFP4409
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.24 ––– V/°C Reference to 25°C, ID = 3.5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 56 69 m VGS = 10V, ID = 24A 
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =300 V, VGS = 0V
––– ––– 250 VDS =300V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 1.3 ––– 
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance 45 ––– ––– S VDS = 50V, ID =24A
Qg Total Gate Charge ––– 83 125
nC
ID = 24A
Qgs Gate-to-Source Charge ––– 28 42 VDS = 150V
Qgd Gate-to-Drain Charge ––– 26 39 VGS = 10V
td(on) Turn-On Delay Time ––– 18 –––
ns
VDD = 195V
tr Rise Time ––– 23 ––– ID = 24A
td(off) Turn-Off Delay Time ––– 34 ––– RG= 2.2
tf Fall Time ––– 20 ––– VGS = 10V
Ciss Input Capacitance ––– 5168 –––
pF
VGS = 0V
Coss Output Capacitance ––– 300 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 77 ––– ƒ = 1.0MHz
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 196 ––– VGS = 0V, VDS = 0V to 240V
See Fig.11
Coss eff.(TR) Output Capacitance (Time Related) ––– 265 ––– VGS = 0V, VDS = 0V to 240V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 40
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 160 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 24A,VGS = 0V 
trr Reverse Recovery Time ––– 302 ––– ns TJ = 25°C VDD = 255V
––– 379 ––– TJ = 125°C IF = 24A,
Qrr Reverse Recovery Charge ––– 1739 ––– nC TJ = 25°C di/dt = 100A/µs 
––– 2497 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 13 ––– A TJ = 25°C
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Recommended max EAS limit, starting TJ = 25°C, L = 2.05mH, RG = 50, IAS = 24A, VGS =10V.
I
SD 24A, di/dt 1771A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994 http://www.irf.com/technical-info/ app notes/an-994.pdf
Ris measured at TJ approximately 90°C
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AUIRFP4409
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level TO-247AC N/A
ESD
Machine Model Class M4 (+/- 500V)††
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)††
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000)††
AEC-Q101-005
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
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Fig 1. Typical Output Characteristics
2 4 6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 50V
60µs PULSE WIDTH
Fig 4. Normalized On-Resistance vs. Temperature
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
60µs PULSE WIDTH
Tj = 25°C
5.0V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM 5.0V
110 100 1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 24A
VGS = 10V
0 20 40 60 80 100 120
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 240V
VDS= 150V
VDS= 60V
ID = 24A
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AUIRFP4409
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
270
280
290
300
310
320
330
340
350
360
370
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 3.5mA
Fig 8. Maximum Safe Operating Area
-50 0 50 100 150 200 250 300 350
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Energy (µJ)
Fig 11. Typical Coss Stored Energy Fig 12. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
Fig 9. Maximum Drain Current vs. Case Temperature
-75 -25 25 75 125 175 225
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
6.0
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 10. Drain-to–Source Breakdown Voltage
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
7
14
21
28
35
42
ID, Drain Current (A)
Fig 7. Typical Source-Drain Diode Forward Voltage
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
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Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0200 400 600 800 1000
diF /dt (A/µs)
1000
1500
2000
2500
3000
3500
QRR (nC)
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
10
20
30
40
50
IRRM (A)
IF = 16A
VR = 255V
TJ = 25°C
TJ = 125°C
Fig 16. Typical Stored Charge vs. dif/dt Fig 17. Typical Stored Charge vs. dif/dt
Fig 14. Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
10
20
30
40
50
60
IRRM (A)
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
1000
1500
2000
2500
3000
3500
4000
4500
5000
QRR (nC)
IF = 24A
VR = 255V
TJ = 25°C
TJ = 125°C
Fig 15. Typical Recovery Current vs. dif/dt
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
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Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 19a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 20a. Switching Time Test Circuit
Fig 21a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 20b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 21b. Gate Charge Waveform
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
2x
c
"A"
"A"
E
E2/ 2
Q
E2
2X
L1
L
D
A
e
2x b2 3x b
LEAD TIP
SEE
VIEW "B"
b4
B
A
Ø .010 BA
A2
A1
Ø .010 BA
D1
S
E1
THERMAL PAD
-A-
Ø P
Ø .010 BA
VI EW: "B"
SECTION: C-C, D- D, E-E
(b, b2, b4)
(c)
BASE META
L
PLATI NG
VI EW: "A" - "A"
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
AUFP4409
Lot Code
Part Number
IR Logo
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AUIRFP4409
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services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
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AUIRFP4409