UT54ACS541/UTS54ACTS541 Radiation-Hardened Octal Buffers & Line Drivers, Three-State Outputs FEATURES PINOUTS Three-state outputs drive bus lines or buffer memory address registers 1.2, radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QML Q or V processes Flexible package - 20-pin DIP - 20-lead flatpack DESCRIPTION The UTS4ACS541 and the UTS4ACTSS4 1 are non-inverting octal buffers and line drivers which improve the performance and density of three-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The devices are characterized over full military temperature range of -55C to +125C. FUNCTION TABLE INPUTS OUTPUT 1G 2G Ya L L H x LOGIC SYMBOL ze 2G A (18) yy A2 Y2 AS Y3 Aa v4 AS 5 AG Y6 AT Y7 AB Ye Note: 1. This symbols is in accordance with ANSI/AIEEE Std 91-1984 and IEC Publication 617-12. 20-Pin DIP Top View 7Cj1 2017) Yoo Altj2 19 [7] 26 A2C)3 18] 1 A314 17/7] Y2 a4(|s = 16[7) 3 A5(]6 15[_} v4 AGC 7 14(7] 5 A7[]s 13{_] 6 A8(]9 42[_] 7 Vss(]10 11 [7 8 20-Lead Flatpack Top View 1 2 3 4 5 6 7 8 9 = o 20 19 18 7 16 18 14 13 12 1 Voo 1 Y2 3 ya Y5 Y6 8 197 Rad-Hard MSI Logic UT54ACS541/UTS4ACTS541 LOGIC DIAGRAM As Av AG AS A4 A3 A2 Al 2616 (9) (8) (7) (8) (5) (4) (3) (2) (199) 11) (11) 12) (43) (14) (15) (16) (17) (18) Y8 Y7 Y6 5 4 3 Y2 Y1 RADIATION HARDNESS SPECIFICATIONS ! PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU & SEL Threshold 2 80 MeV-cm2/mg Neutron Fluence 1.0E14 n/em2 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table .2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER LIMIT UNITS Vpp Supply voltage -0.3 to 7.0 Vv Vuo Voltage any pin -.3 to Vpp +.3 Vv Tste Storage Temperature range -65 to +150 c Ty Maximum junction temperature +175 C TLs Lead temperature (soldering 5 seconds) +300 c ic Thermal resistance junction to case 20 C/W I DC input current +10 mA Pp Maximum power dissipation 1 Ww Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rad-Hard MSI Logic 198 UTS4ACS541/UT54ACTSS541 RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMIT UNITS Vpp Supply voltage 4505.5 Vv Vin Input voltage any pin 0t0 Vpp v Tc Temperature range -55 to + 125 C DC ELECTRICAL CHARACTERISTICS 7 (Vpp = 5.0V 10%; Vsg = OV , 55C < Te < +125C) SYMBOL PARAMETER CONDITION MIN MAX UNIT Vin Low-level input voltage ! ACTS . 0.8 v ACS 3Vpp Vin High-level input voltage ! ACTS 5Vpp Vv ACS Npp In Input leakage current ACTS/ACS Vin = Vpp or Vs -1 1 pA Vor Low-level output voltage 3 ACTS Toy = 12.0mA 0.40 Vv ACS Toy = 100HA 0.25 Vou High-level output voltage 3 ACTS Toy = -12.0mA TVpp Vv ACS Toy = -100HA Vpp - 0.25 Ipz Three-state output leakage current Vo = Ypp and Vgs -30 30 pA Ios Short-circuit output current 24 ACTS/ACS Vo = Ypp and Vsg -300 300 mA Protal Power dissipation C_ = SOpF 2.1 mW/ MHz Ippo Quiescent Supply Current Vpp = 5.5V 10 pA Cn Input capacitance 4 f = IMHz @ 0V 15 pF Cout Output capacitance 5 f = IMHz @ 0V 15 pF Notes: 1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: Viz = Vy4(min) + 20%, - 0%; Vip = Vy_ (max) + 0%, - 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but are guaranteed to V1};(min) and Vj, (max). 2. Supplied as a design limit but not guaranteed or tested. 3, Per MIL-M-38510, for current density < 5.0E5 amps/cm, the maximum product of load capacitance (per output buffer) times frequency should not exceed 3,765 pF MHz. 4. Not more than one output may be shorted at a time for maximum duration of one second. 5, Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and Vgg at frequency of [MHz and a signal amplitude of 50mV mms maximum. 6, Maximum allowable relative shift equals SOmV. 7. All specifications valid for radiation dose < 1E6 rads(Si). 8. Power does not include power contribution of any TTL output sink current. 9. Power dissipation specified per switching output. 199 Rad-Hard MSI Logic AC ELECTRICAL CHARACTERISTICS 2 (Vpp = 5.0V 10%; Vos = OV !, -55C < Te < +125C) UT5S4ACS541/UTS4ACTS541 SYMBOL PARAMETER MINIMUM MAXIMUM UNIT tplH An to Yn 1 11 ns tpyL An to Yn 1 14 ns tpz, _| G low & Yn active 2 14 ns tpzy _| low to Yn active 2 15 ns tp_z | G high to Yn three-state 2 12 ns tpHz _'| & high to Yn three-state 2 13 ns ttLH _| Output transition time ? 1 6 ns trat _| Output transition time 3 1 7 ns Notes: 1, Maximum allowable relative shift equals 50m V. 2. All specifications valid for radiation dose $ 1E6 rads(Si). 3. This is controlled via design or process parameters. These values are characterized upon initial design release and upon design changes which effect these characteristics. These are not directly tested. Rad-Hard MSI Logic 200