PRODUCT: ZEN098V230A16LS PolyZen DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 1 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies Specification Status: Released GENERAL DESCRIPTION Littefuse PolyZen devices are polymer-enhanced, precision Zener diode micro-assemblies. They offer resettable protection against multi-Watt fault events and spare the need for large heavy heat sinks. A unique feature of the PolyZen micro-assembly is that the Zener diode is thermally coupled to a resistively non-linear, polymer PTC (Positive Temperature Coefficient) layer. This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This polymer PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as "tripping". A tripped PTC will limit current and generate voltage drop. It helps to protect both the Zener diode and the follow-on electronics and effectively increases the diode's power handling capability. The Zener diode used for voltage clamping in the PolyZen micro-assembly was selected due to its relatively flat voltage vs current response. This helps improve output voltage clamping, even when input voltage is high and diode current is large. The polymer-enhanced Zener diode helps protect sensitive portable electronics from damage caused by inductive voltage spikes, voltage transients, incorrect power supplies, and reverse bias conditions. The PolyZen ZEN098V230A16LS devices are particularly useful for portable electronics and other low-power DC devices. BENEFITS Stable Zener diode helps shield downstream electronics from overvoltage and reverse bias Trip events shut out overvoltage and reverse bias sources Analog nature of trip events minimizes upstream inductive spikes Minimal power dissipation requirements Single component placement FEATURES Overvoltage transient suppression Stable VZ vs fault current Time delayed, overvoltage trip Time delayed, reverse bias trip Multi-Watt power handling capability Integrated device construction RoHS Compliant and Halogen Free TARGET APPLICATIONS DC power port protection in portable electronics DC power port protection for systems using barrel jacks for power input Internal overvoltage & transient suppression DC output voltage regulation TYPICAL APPLICATION BLOCK DIAGRAM Power Supply PolyZen Protected Electronics (External or Internal) 2 VIN 1 + PolyZen Device GND VOUT 3 Regulated Output (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 RLoad Protected downstream electronics littelfuse.com PRODUCT: ZEN098V230A16LS PolyZen Polymer Enhanced Zener Diode Micro-Assemblies DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 2 OF 8 CONFIGURATION INFORMATION Pin Configuration (Top View) Pad Dimensions 2 VIN 0.94 mm (0.037") GND 2.21 mm (0.087") 1 3 0.33 mm (0.013") 0.94 mm (0.037") VOUT 0.56 mm (0.022") 2.88 mm (0.1135") 0.56 mm (0.022") PIN DESCRIPTION Pin Number 1 2 3 Pin Name VIN GND VOUT Pin Function VIN. Protected input to Zener diode. GND VOUT. Zener regulated voltage output BLOCK DIAGRAM Polymer PTC VIN Zener Diode VOUT GND DEFINITION of TERMS IPTC IFLT IOUT Trip Event Trip Endurance Current flowing through the PTC portion of the circuit RMS fault current flowing through the diode Current flowing out the VOUT pin of the device A condition where the PTC transitions to a high resistance state, thereby significantly limiting I PTC and related currents. Time the PTC portion of the device remains in a high resistance state. (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 IPTC, IHOLD IOUT VIN VOUT IFLT GND littelfuse.com PRODUCT: ZEN098V230A16LS PolyZen DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 3 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies GENERAL SPECIFICATIONS Operating Temperature Storage Temperature -40 to +85C -40 to +85C ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified) VZ4 (V) Izt4 (A) Min Typ Max 9.6 9.8 10.0 0.1 IHOLD5 @ 20C (A) 2.3 VInt Max8 (V) Leakage Current Test Voltage Max Current (mA) 9.5 5.0 R Typ6 (Ohms) R1Max7 (Ohms) 0.04 0.06 VINT Max (V) Tripped Power Dissipation 10 Max IFLT Max9 Test Current (A) IFLT Max (A) Test Voltage (V) Value (W) Test Voltage (V) 5A +3.5 -40 +16 -12 1.0 16 16V Note 1: Electrical characteristics determined at 25C unless otherwise specified. Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact, Littelfuse Circuit Protection Division directly. Note 3: Specifications developed using 1.0 ounce 0.045" wide copper traces on dedicated FR4 test boards. Performance in your application may vary. Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request. Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent the diode from acting as a heat source. Testing is conducted with an "open" Zener. Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature. Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow soldering. Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (V IN-VOUT). VINT Max is defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24 hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating. Note 9: IFLT Max: IFLT Max relates to the steady state current flowing through the diode portion of the PolyZen device in a fault condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots) survived 100 test cycles. RMS fault current above I FLT Max may permanently damage the diode portion of the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. "Test voltage" is defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating. Note 10: The power dissipated by the device when in the "tripped" state, as measured on Littelfuse test boards (see note 3). Note 11: Specifications based on limited qualification data and subject to change. MECHANICAL DIMENSIONS Length L Width W Height H Length Diode Height Diode (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 Min 3.85 mm (0.152") 3.85 mm (0.152") 1.4mm (0.055") Ld - Hd - Offset O1 - Offset O2 - Typical 4 mm (0.16") 4 mm (0.16") 1.7 mm (0.067") 3.0 mm (0.118") 1.0 mm (0.039") 0.6 mm (0.024") 0.7 mm (0.028") Max 4.15 mm (0.163") 4.15 mm (0.163") 2.0 mm (0.081") - littelfuse.com PolyZen Polymer Enhanced Zener Diode Micro-Assemblies PRODUCT: ZEN098V230A16LS DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 4 OF 8 SOLDER REFLOW RECOMMENDATIONS: Classification Reflow Profiles Profile Feature Average Ramp-Up Rate (Tsmax to Tp) Preheat * Temperature Min (Tsmin) * Temperature Max (Tsmax) * Time (tsmin to tsmax) Time maintained above: * Temperature (TL) * Time (tL) Peak/Classification Temperature (Tp) Time within 5 C of actual Peak Temperature (tp) Ramp-Down Rate Time 25 C to Peak Temperature (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 Pb-Free Assembly 3 C/second max. 150 C 200 C 60-180 seconds 217 C 60-150 seconds 260 C 20-40 seconds 6 C/second max. 8 minutes max. littelfuse.com PolyZen Polymer Enhanced Zener Diode Micro-Assemblies PRODUCT: ZEN098V230A16LS DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 5 OF 8 PACKAGING Packaging Tape & Reel Standard Box ZENXXXVXXXAXXLS 3,000 15,000 Reel Dimensions for PolyZen Devices Amax = 330 Nmin = 102 W1 = 8.4 W2 = 11.1 Matte Finish These Area Nmin Amax Taped Component Dimensions for PolyZen Devices (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 littelfuse.com PRODUCT: ZEN098V230A16LS PolyZen DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 6 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies TYPICAL CHARACTERISTICS Typical I-V (300 sec pulse) Typical Fault Response: ZEN098V230A16LS 16 V/3.5 A Current Limited Source (IOUT=0) 18 14 11.00 A = VIN (V) B = VOUT (V) C = IFLT (A) 10.75 A 12 Voltage: VOUT (V) VIN / VOUT (V) or IFLT (A) 16 B 10 8 6 4 10.25 10.00 9.75 9.50 9.25 2 0 0.00 10.50 C 0.00001 0.05 0.10 Time (sec) (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 0.15 ZEN098VxxxAxxLS 9.00 0.20 0.0001 0.001 0.01 0.1 1 10 Current: IFLT (A) littelfuse.com PRODUCT: ZEN098V230A16LS PolyZen DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 7 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies Vout Peak vs. IFLT RMS (IOUT=0) Typical I-V (300 sec pulse) 10 12.0 ZEN098V230A16LS 11.5 Vout Peak (V) Current: IFLT (A) 5 0 -5 -10 11.0 10.5 -15 ZEN098VxxxAxxLS 10.0 0.0 -20 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 1.0 Time to Trip vs. IFLT (IOUT=0) 3.0 4.0 Vpeak vs. IFLT RMS (IOUT=0) 100 0.0 ZEN098V230A16LS ZEN098V230A16LS -0.2 10 Vout Peak (V) Time to Trip (sec) 2.0 IFLT RMS (A) Voltage: VOUT (V) 1 -0.4 -0.6 -0.8 -1.0 0.1 -1.2 -1.4 0.01 0 1 2 IFLT RMS (A) (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 3 4 -40 -30 -20 -10 0 IFLT RMS (A) littelfuse.com PRODUCT: ZEN098V230A16LS PolyZen DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 8 OF 8 Polymer Enhanced Zener Diode Micro-Assemblies Temperature Effect on IHold (IFLT = 0) Time To Trip vs. IFLT RMS (IOUT=0) 100 ZEN098V230A16LS Ihold (A) Time To Trip (sec) 10 1 0.1 0.01 4 3.5 3 2.5 2 1.5 1 0.5 0 ZEN098V230A16LS -40 0.001 -40 -30 -20 -10 -20 0 0 20 40 60 80 100 Ambient Temperature (C) IFLT RMS (A) Time to Trip vs. IPTC RMS (IFLT=0) Temperature Effect on RTYP 1000 0.10 ZEN098V230A16LS ZEN098V230A16LS Time to Trip (sec) 100 RTYP (Ohm) 0.08 0.06 0.04 0.02 10 1 0.1 0.01 0.001 0.00 20 40 60 80 0 10 20 30 40 IPTC RMS (A) Ambient Temperature (C) Materials Information ROHS Compliant ELV Compliant Pb-Free Halogen Free* HF * Halogen Free refers to: Br900ppm, Cl900ppm, Br+Cl1500ppm (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 littelfuse.com PolyZen Polymer Enhanced Zener Diode Micro-Assemblies PRODUCT: ZEN098V230A16LS DOCUMENT: SCD27861 REV LETTER: B REV DATE: JULY 26, 2016 PAGE NO.: 9 OF 8 Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. (c) 2016 Littelfuse,Inc. Specifications are subject to change without notice. Revised July 26, 2016 littelfuse.com