471 BLUE (1/4"X36YDS) - 3M

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 1 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

Specification Status: Released

GENERAL DESCRIPTION

Littefuse PolyZen devices are

polymer-enhanced, precision

Zener diode micro-assemblies.

They offer resettable protection

against multi-Watt fault events and

spare the need for large heavy

heat sinks.

A unique feature of the PolyZen

micro-assembly is that the Zener

diode is thermally coupled to a

resistively non-linear, polymer

PTC (Positive Temperature

Coefficient) layer. This PTC layer is fully integrated into the

device, and is electrically in series between VIN and the diode

clamped VOUT.

This polymer PTC layer responds to either extended diode

heating or overcurrent events by transitioning from a low to high

resistance state, also known as “tripping”. A tripped PTC will

limit current and generate voltage drop. It helps to protect both

the Zener diode and the follow-on electronics and effectively

increases the diode’s power handling capability.

The Zener diode used for voltage clamping in the PolyZen

micro-assembly was selected due to its relatively flat voltage vs

current response. This helps improve output voltage clamping,

even when input voltage is high and diode current is large.

The polymer-enhanced Zener diode helps protect sensitive

portable electronics from damage caused by inductive voltage

spikes, voltage transients, incorrect power supplies, and

reverse bias conditions. The PolyZen ZEN098V230A16LS

devices are particularly useful for portable electronics and other

low-power DC devices.

BENEFITS

 Stable Zener diode helps shield

downstream electronics from

overvoltage and reverse bias

 Trip events shut out overvoltage and

reverse bias sources

 Analog nature of trip events minimizes

upstream inductive spikes

 Minimal power dissipation requirements

 Single component placement

FEATURES

 Overvoltage transient suppression

 Stable VZ vs fault current

 Time delayed, overvoltage trip

 Time delayed, reverse bias trip

 Multi-Watt power handling capability

 Integrated device construction

 RoHS Compliant and Halogen Free

TARGET APPLICATIONS

 DC power port protection in portable

electronics

 DC power port protection for systems

using

barrel jacks for power input

 Internal overvoltage & transient

suppression

 DC output voltage regulation

TYPICAL APPLICATION BLOCK DIAGRAM

GND

VIN VOUT

Regulated

Output RLoad

Protected downstream

electronics

1

2

3

+

Power Supply

(External or Internal) PolyZen Protected Electronics

PolyZen

Device

GND

VIN VOUT

Regulated

Output RLoad

Protected downstream

electronics

1

2

3

+

Power Supply

(External or Internal) PolyZen Protected Electronics

GND

VIN VOUT

Regulated

Output RLoad

Protected downstream

electronics

1

2

3

+

Power Supply

(External or Internal) PolyZen Protected Electronics

PolyZen

Device

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 2 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

CONFIGURATION INFORMATION

Pin Configuration (Top View)

Pad Dimensions

PIN DESCRIPTION

Number

Pin Name

Pin Function

1

VIN

VIN. Protected input to Zener diode.

2

GND

3

VOUT

VOUT. Zener regulated voltage output

BLOCK DIAGRAM

DEFINITION of TERMS

IPTC

Current flowing through the PTC portion of the

circuit

IFLT

RMS fault current flowing through the diode

IOUT

Current flowing out the VOUT pin of the device

Trip Event

A condition where the PTC transitions to a high

resistance state, thereby significantly limiting IPTC

and related currents.

Trip

Endurance

Time the PTC portion of the device remains in a

high resistance state.

2.21 mm

(0.087”)

0.94 mm

(0.037”)

0.33 mm

(0.013”)

0.56 mm

(0.022”)2.88 mm

(0.1135”)0.56 mm

(0.022”)

0.94 mm

(0.037”)

2.21 mm

(0.087”)

0.94 mm

(0.037”)

0.33 mm

(0.013”)

0.56 mm

(0.022”)2.88 mm

(0.1135”)0.56 mm

(0.022”)

0.94 mm

(0.037”)

2

3

VIN

GND

VOUT

1

2

3

VIN

GND

VOUT

1

GND

IFLT

VIN

IOUT

IPTC, IHOLD

VOUT

GND

IFLT

VIN

IOUT

IPTC, IHOLD

VOUT

GND

VIN

VOUT

Zener

Diode

Polymer PTC

GND

VIN

VOUT

Zener

Diode

Polymer PTC

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 3 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

GENERAL SPECIFICATIONS

Operating Temperature

-40º to +85ºC

Storage Temperature

-40º to +85ºC

ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)

VZ4

(V)

Izt4

(A)

IHOLD5

@20ºC

(A)

Leakage Current

R Typ6

(Ohms)

R1Max7

(Ohms)

VInt Max8

(V)

IFLT Max9

Tripped Power

Dissipation 10

Max

VINT

Max

(V)

Test

Current

(A)

IFLT

Max

(A)

Test

Voltage

(V)

Value

(W)

Test

Voltage

(V)

Min

Typ

Max

Test

Voltage

Max

Current

(mA)

9.6

9.8

10.0

0.1

2.3

9.5

5.0

0.04

0.06

16V

5A

+3.5

-40

+16

-12

1.0

16

Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.

Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the

device and may affect performance to specifications. Performance impact will depend on multiple factors including,

but not limited to, voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your

application contact, Littelfuse Circuit Protection Division directly.

Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in

your application may vary.

Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.

Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip

event at the specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently

low so as to prevent the diode from acting as a heat source. Testing is conducted with an “open” Zener.

Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature.

Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow

soldering.

Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is

defined as the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at

least 100 trip cycles and 24 hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max

testing is conducted using a "shorted" load (VOUT = 0 V). VINT Max is a survivability rating, not a performance rating.

Note 9: IFLT Max: IFLT Max relates to the steady state current flowing through the diode portion of the PolyZen device in a fault

condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot

from 3 lots) survived 100 test cycles. RMS fault current above IFLT Max may permanently damage the diode portion of

the PolyZen device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is

defined as the voltage between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the

direction of current flow through the diode. IFLT Max is a survivability rating, not a performance rating.

Note 10: The power dissipated by the device when in the “tripped” state, as measured on Littelfuse test boards (see note 3).

Note 11: Specifications based on limited qualification data and subject to change.

MECHANICAL DIMENSIONS

Min

Typical

Max

Length

L

3.85 mm

(0.152”)

4 mm

(0.16”)

4.15 mm

(0.163")

Width

W

3.85 mm

(0.152”)

4 mm

(0.16”)

4.15 mm

(0.163")

Height

H

1.4mm

(0.055”)

1.7 mm

(0.067”)

2.0 mm

(0.081”)

Length

Diode

Ld

-

3.0 mm

(0.118”)

-

Height

Diode

Hd

-

1.0 mm

(0.039”)

-

Offset

O1

-

0.6 mm

(0.024”)

-

Offset

O2

-

0.7 mm

(0.028”)

-

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 4 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

SOLDER REFLOW RECOMMENDATIONS:

Classification Reflow Profiles

Profile Feature

Pb-Free Assembly

Average Ramp-Up Rate (Tsmax to Tp)

3 °C/second max.

Preheat

• Temperature Min (Tsmin)

150 °C

• Temperature Max (Tsmax)

200 °C

• Time (tsmin to tsmax)

60-180 seconds

Time maintained above:

• Temperature (TL)

217 °C

• Time (tL)

60-150 seconds

Peak/Classification Temperature

(Tp)

260 °C

Time within 5 °C of actual Peak

Temperature (tp)

20-40 seconds

Ramp-Down Rate

6 °C/second max.

Time 25 °C to Peak Temperature

8 minutes max.

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 5 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

PACKAGING

Packaging

Tape & Reel

Standard Box

ZENXXXVXXXAXXLS

3,000

15,000

Reel Dimensions for PolyZen Devices

Amax = 330

Nmin = 102

W1 = 8.4

W2 = 11.1

Taped Component Dimensions for PolyZen Devices

Matte Finish These Area

Amax

Nmin

Matte Finish These Area

Amax

Nmin

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 6 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

TYPICAL CHARACTERISTICS

Typical Fault Response: ZEN098V230A16LS

16 V/3.5 A Current Limited Source (IOUT=0)

0

2

4

6

8

10

12

14

16

18

0.00 0.05 0.10 0.15 0.20

Time (sec)

VIN / VOUT (V) or IFLT (A)

A = VIN (V)

B = VOUT (V)

C = IFLT (A)

A

B

C

Typical I-V (300 μsec pulse)

9.00

9.25

9.50

9.75

10.00

10.25

10.50

10.75

11.00

0.00001 0.0001 0.001 0.01 0.1 110

Current: IFLT (A)

Voltage: VOUT (V)

ZEN098VxxxAxxLS

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 7 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

Typical I-V (300 μsec pulse)

-20

-15

-10

-5

0

5

10

-2 -1 012345678910 11

Voltage: VOUT (V)

Current: IFLT (A)

ZEN098VxxxAxxLS

Vout Peak vs. IFLT RMS (IOUT=0)

10.0

10.5

11.0

11.5

12.0

0.0 1.0 2.0 3.0 4.0

IFLT RMS (A)

Vout Peak (V)

ZEN098V230A16LS

Time to Trip vs. IFLT (IOUT=0)

0.01

0.1

1

10

100

0 1 2 3 4

IFLT RMS (A)

Time to Trip (sec)

ZEN098V230A16LS

Vpeak vs. IFLT RMS (IOUT=0)

-1.4

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

-40 -30 -20 -10 0

IFLT RMS (A)

Vout Peak (V)

ZEN098V230A16LS

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 8 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

Time To Trip vs. IFLT RMS (IOUT=0)

0.001

0.01

0.1

1

10

100

-40 -30 -20 -10 0

IFLT RMS (A)

Time To Trip (sec)

ZEN098V230A16LS

Temperature Effect on IHold (IFLT = 0)

0

0.5

1

1.5

2

2.5

3

3.5

4

-40 -20 020 40 60 80 100

Ambient Temperature (°C)

Ihold (A)

ZEN098V230A16LS

Temperature Effect on RTYP

0.00

0.02

0.04

0.06

0.08

0.10

20 40 60 80

Ambient Temperature (°C)

RTYP (Ohm)

ZEN098V230A16LS

Time to Trip vs. IPTC RMS (IFLT=0)

0.001

0.01

0.1

1

10

100

1000

010 20 30 40

IPTC RMS (A)

Time to Trip (sec)

ZEN098V230A16LS

Materials Information

ROHS Compliant ELV Compliant Pb-Free

* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm

HF

Halogen Free*

PolyZen

Polymer Enhanced Zener Diode

Micro-Assemblies

PRODUCT: ZEN098V230A16LS

DOCUMENT: SCD27861

REV LETTER: B

REV DATE: JULY 26, 2016

PAGE NO.: 9 OF 8

Specifications are subject to change without notice.

Revised July 26, 2016

Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving,

life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired

operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation.

Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall

not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse

documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse.