DEMO-HBFP04X-X3 - Agilent / Hewlett-Packard

High Performance Isolated

Collector Silicon Bipolar

Transistor

Technical Data

Features

• Ideal for High Gain, Low

Current Applications

• Typical Performance at

1.8 GHz

Associated Gain of 18 dB

and Noise Figure of 1.2 dB

at 2V and 2 mA

P1dB of 5 dBm at 2 V and

5mA

• Miniature 4-lead SC-70

(SOT-343) Plastic Package

• Transition Frequency

fT = 25 GHz

Applications

• LNA, Oscillator, Driver

Amplifier, Buffer Amplifier,

and Down Converter for

Cellular and PCS Handsets

and Cordless Telephones

• Oscillator for TV Delivery

and TVRO Systems up to

12 GHz

HBFP-0405

Description

Agilent’s HBFP-0405 is a high

performance isolated collector

silicon bipolar junction transistor

housed in a 4-lead SC-70

(SOT-343) surface mount plastic

package.

HBFP-0405 provides an associated

gain of 18 dB, noise figure of

1.2 dB, and P1dB of 5 dBm at

1.8 GHz. Because of high gain and

low current characteristics,

HBFP-0405 is ideal for cellular/

PCS as well as for C-Band and

Ku-Band applications.

This product is based on a 25 GHz

transition frequency fabrication

process, which enables the

products to be used for high

performance, low noise applica-

tions at 900 MHz, 1.9 GHz,

2.4 GHz, and beyond.

Surface Mount Plastic

Package/SOT-343 (SC-70)

Outline 4T

Pin Configuration

CollectorEmitter

Base Emitter

02x

Note:

Package marking provides orientation

and identification.

02 = Device code

x = Date code character. A new

character is assigned for each

month, year

HBFP-0405 Absolute Maximum Ratings Absolute

Symbol Parameter Units Maximum[1]

VEBO Emitter-Base Voltage V 1.5

VCBO Collector-Base Voltage V 15.0

VCEO Collector-Emitter Voltage V 4.5

ICCollector Current mA 12

PTPower Dissipation[2] mW 54

TjJunction Temperature °C 150

TSTG Storage Temperature °C -65 to 150

Thermal Resistance:

θjc = 550°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. PT limited by maximum ratings.

Electrical Specifications, TC = 25°C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

DC Characteristics

BVCEO Collector-Emitter Breakdown Voltage IC = 1 mA, open base V 4.5

ICBO Collector-Cutoff Current VCB = 5 V, IE = 0 nA 150

IEBO Emitter-Base Cutoff Current VEB = 1.5 V, IC = 0 µA15

hFE DC Current Gain VCE = 2 V, IC = 2 mA — 50 80 150

RF Characteristics

FMIN Minimum Noise Figure IC = 2 mA, VCE = 2 V, f = 1.8 GHz dB 1.2 1.5

GaAssociated Gain IC = 2 mA, VCE = 2 V, f = 1.8 GHz dB 16.5 18

|S21|2Insertion Power Gain IC = 5 mA, VCE = 2 V, f = 1.8 GHz dB 17

P-1dB Power Output @ 1 dB IC = 5 mA, VCE = 2 V, f = 1.8 GHz dBm 5

Compression Point

HBFP-0405 Typical Scattering Parameters,

VCE = 2 V, IC = 2 mA, TC = 25°C

Freq. S11 S21 S12 S22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.910 -4.2 16.5 6.665 176.2 -49.6 0.003 88.5 0.995 -2.2

0.5 0.889 -21.2 16.3 6.496 160.6 -35.6 0.017 80.5 0.982 -10.5

0.9 0.855 -37.6 15.7 6.101 146.0 -30.4 0.030 71.9 0.951 -18.8

1.0 0.841 -41.4 15.6 5.993 142.5 -29.5 0.033 69.6 0.937 -20.9

1.5 0.774 -60.9 14.8 5.484 125.9 -26.4 0.048 57.5 0.880 -30.8

1.8 0.730 -72.0 14.3 5.164 116.8 -25.1 0.055 50.6 0.843 -36.4

2.0 0.701 -79.4 13.9 4.964 110.9 -24.5 0.059 46.4 0.817 -39.8

2.5 0.634 -96.0 13.0 4.450 97.0 -23.4 0.068 37.0 0.758 -47.8

3.0 0.570 -112.3 12.0 3.996 84.7 -22.7 0.073 28.7 0.708 -54.9

3.5 0.521 -127.0 11.2 3.620 73.4 -22.3 0.077 21.7 0.669 -60.9

4.0 0.477 -141.2 10.4 3.320 62.9 -21.9 0.080 15.6 0.634 -66.4

4.5 0.443 -154.7 9.7 3.047 53.6 -21.8 0.082 10.7 0.613 -71.5

5.0 0.412 -168.7 9.0 2.829 44.2 -21.5 0.084 6.0 0.591 -76.4

5.5 0.386 177.1 8.5 2.646 34.9 -21.3 0.087 1.6 0.571 -80.8

6.0 0.372 162.2 7.9 2.493 25.6 -21.0 0.089 -2.1 0.550 -86.1

6.5 0.369 147.7 7.5 2.371 16.8 -20.7 0.093 -7.0 0.525 -90.5

7.0 0.366 130.7 7.1 2.258 8.1 -20.4 0.096 -10.7 0.496 -95.2

7.5 0.370 116.2 6.6 2.141 -1.3 -20.0 0.100 -14.7 0.471 -100.2

8.0 0.387 102.9 6.2 2.042 -9.8 -19.8 0.103 -19.2 0.444 -106.7

8.5 0.405 91.4 5.7 1.937 -18.3 -19.5 0.105 -23.6 0.425 -113.9

9.0 0.421 80.9 5.3 1.834 -26.6 -19.3 0.109 -27.9 0.411 -121.3

9.5 0.437 70.5 4.9 1.753 -35.2 -19.0 0.112 -32.4 0.398 -127.7

10.0 0.454 60.3 4.4 1.669 -43.7 -18.8 0.115 -37.0 0.385 -133.5

HBFP-0405 Noise Parameters: VCE = 2 V, IC = 2 mA

Freq. Fmin Γopt RNGa

GHz dB Mag Ang ΩdB

0.9 1.07 0.569 9.3 20.9 23.46

1.0 1.09 0.558 11.6 20.6 22.67

1.5 1.19 0.504 22.0 19.2 19.64

1.8 1.25 0.474 28.7 18.5 18.28

2.0 1.29 0.456 33.6 18.0 17.50

2.5 1.39 0.423 48.2 16.6 15.91

3.0 1.48 0.391 59.3 15.6 14.39

3.5 1.57 0.352 72.1 14.2 13.29

4.0 1.70 0.318 83.1 13.0 12.29

4.5 1.78 0.290 93.9 12.1 11.43

5.0 1.87 0.257 107.3 10.9 10.71

5.5 2.00 0.215 118.3 10.5 10.03

6.0 2.10 0.179 133.7 10.4 9.47

6.5 2.18 0.157 153.1 10.2 8.97

7.0 2.29 0.125 -179.2 11.0 8.50

7.5 2.35 0.116 -154.8 12.0 7.98

8.0 2.50 0.140 -123.4 13.7 7.63

8.5 2.65 0.163 -104.1 15.9 7.21

9.0 2.76 0.191 -89.2 18.6 6.81

9.5 2.93 0.226 -73.4 22.3 6.51

10.0 2.94 0.254 -61.4 26.3 6.16

S and noise parameters are measured

on a microstrip line made on

0.025 inch thick alumina carrier. The

input reference plane is at the end of

the base lead, the output reference

plane is at the end of the collector

lead. S and noise parameters include

the effect of four plated through via

holes connecting emitter landing pads

on the top of test carrier to the

microstrip ground plane on the

bottom side of the carrier. Two

0.020 inch diameter via holes are

placed within 0.010 inch from each

emitter lead contact point, one via on

each side of that point.

HBFP-0405 Typical Scattering Parameters,

VCE = 2 V, IC = 5 mA, TC = 25°C

Freq. S11 S21 S12 S22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.819 -6.2 22.0 12.630 174.5 -50.2 0.003 87.8 0.990 -2.8

0.5 0.775 -30.3 21.5 11.912 153.5 -36.2 0.016 77.1 0.959 -13.4

0.9 0.704 -52.4 20.6 10.664 134.9 -31.5 0.027 67.3 0.897 -23.3

1.0 0.681 -57.2 20.3 10.308 130.7 -30.8 0.029 64.9 0.875 -25.5

1.5 0.585 -81.5 18.8 8.689 111.9 -28.1 0.039 54.0 0.783 -35.2

1.8 0.531 -94.5 17.9 7.817 102.5 -27.2 0.044 49.0 0.733 -40.1

2.0 0.500 -102.7 17.3 7.306 96.7 -26.6 0.047 46.0 0.703 -43.0

2.5 0.440 -121.3 15.9 6.208 83.7 -25.6 0.053 39.9 0.641 -49.4

3.0 0.392 -138.9 14.6 5.362 72.4 -24.8 0.057 34.6 0.597 -55.0

3.5 0.360 -154.1 13.5 4.716 62.3 -24.2 0.061 30.4 0.566 -59.7

4.0 0.334 -168.9 12.5 4.214 52.9 -23.6 0.066 26.5 0.541 -64.2

4.5 0.315 177.0 11.6 3.814 44.3 -23.1 0.070 23.0 0.528 -68.6

5.0 0.302 162.5 10.9 3.491 35.7 -22.5 0.075 19.0 0.513 -73.0

5.5 0.295 148.1 10.2 3.229 27.4 -22.0 0.079 15.1 0.499 -77.0

6.0 0.301 133.7 9.6 3.010 19.0 -21.5 0.084 11.1 0.484 -82.0

6.5 0.311 120.4 9.0 2.827 10.8 -21.0 0.089 6.4 0.463 -86.1

7.0 0.327 105.9 8.5 2.668 2.6 -20.5 0.095 2.1 0.439 -90.5

7.5 0.346 94.0 8.0 2.520 -5.8 -20.0 0.101 -3.0 0.414 -95.4

8.0 0.369 83.4 7.6 2.389 -13.8 -19.5 0.106 -7.7 0.389 -101.6

8.5 0.392 74.1 7.1 2.261 -21.9 -19.1 0.110 -12.8 0.370 -108.5

9.0 0.410 65.6 6.6 2.141 -29.9 -18.7 0.116 -18.0 0.357 -115.8

9.5 0.428 56.9 6.2 2.038 -38.0 -18.4 0.120 -23.1 0.345 -122.3

10.0 0.446 48.2 5.7 1.937 -46.0 -18.1 0.124 -28.5 0.334 -127.9

HBFP-0405 Noise Parameters: VCE = 2 V, IC = 5 mA

Freq. Fmin Γopt RNGa

GHz dB Mag Ang ΩdB

0.9 1.36 0.386 2.8 17.0 25.59

1.0 1.38 0.375 5.0 16.8 24.76

1.5 1.46 0.333 17.7 16.2 21.56

1.8 1.52 0.305 25.5 15.6 20.12

2.0 1.55 0.292 31.9 15.3 19.29

2.5 1.65 0.246 50.0 13.8 17.61

3.0 1.73 0.208 59.9 13.1 16.04

3.5 1.79 0.187 73.6 12.6 14.81

4.0 1.93 0.153 85.6 12.0 13.76

4.5 1.99 0.123 100.2 11.8 12.90

5.0 2.08 0.104 119.5 11.3 12.12

5.5 2.18 0.065 141.5 12.0 11.45

6.0 2.32 0.051 -169.0 12.7 10.87

6.5 2.37 0.068 -129.9 13.5 10.32

7.0 2.48 0.101 -96.3 15.2 9.82

7.5 2.56 0.133 -82.9 17.0 9.33

8.0 2.69 0.177 -71.2 19.7 8.92

8.5 2.85 0.212 -62.8 22.8 8.50

9.0 2.99 0.246 -54.1 26.7 8.10

9.5 3.10 0.282 -46.1 30.9 7.77

10.0 3.12 0.314 -37.3 35.2 7.41

S and noise parameters are measured

on a microstrip line made on

0.025 inch thick alumina carrier. The

input reference plane is at the end of

the base lead, the output reference

plane is at the end of the collector

lead. S and noise parameters include

the effect of four plated through via

holes connecting emitter landing pads

on the top of test carrier to the

microstrip ground plane on the

bottom side of the carrier. Two

0.020 inch diameter via holes are

placed within 0.010 inch from each

emitter lead contact point, one via on

each side of that point.

HBFP-0405 Typical Performance

0248

610

ASSOCIATED GAIN

(dB)

FREQUENCY (GHz)

Figure 1. Associated Gain vs.

Frequency and Collector Current

at 2 V.

02 4810622

ASSOCIATED GAIN

(dB)

COLLECTOR CURRENT (mA)

Figure 2. Noise Figure vs.

Frequency and Collector Current

at V

= 2 V.

Figure 3. Associated Gain vs.

Collector Current and Frequency

at 2 V.

Figure 5. Associated Gain vs. Voltage

and Frequency at 2 mA. Figure 6. Noise Figure vs. Voltage

and Frequency at 2 mA.

Figure 4. Noise Figure vs. Collector

Current and Frequency at 2 V.

2 mA

5 mA

10 mA

15 mA

12 14 18 2016

0.50

1.00

3.50

3.00

1.50

2.00

02468 121410 16

NOISE FIGURE

(dB)

COLLECTOR CURRENT (mA)

2.50

01 2 4536

VOLTAGE (V) VOLTAGE (V)

0248

610

NOISE FIGURE

(dB)

FREQUENCY (GHz)

2 mA

5 mA

10 mA

15 mA

0.9 GHz

1.8 GHz

2.5 GHz

3 GHz

4 GHz

5 GHz

6 GHz

0.9 GHz

1.8 GHz

2.5 GHz

3 GHz

4 GHz

5 GHz

6 GHz

ASSOCIATED GAIN

(dB)

0.9 GHz

1.8 GHz

2.5 GHz

3 GHz

4 GHz

5 GHz

6 GHz

01 2 4536

0.50

1.00

2.00

1.50

2.50

NOISE FIGURE

(dB)

0.9 GHz

1.8 GHz

2.5 GHz

3 GHz

4 GHz

5 GHz

6 GHz

HBFP-0405 Die Model and PSPICE Parameters

CMP9

CMP7

CMP8

CMP69

R=1 OH

R=1.565 OH

R=3.74196 OH

R=6.5915 OH

TEMP=

MODEL=DBE

REGION=

AREA=

REGION=

MODEL=BJTMODEL

AREA=

REGION=

MODEL=DCS

TEMP=

AREA=

REGION=

MODEL=DBC

TEMP=

C=6.227E-3 pF

C=17.213E-3 pF

CMP1

NPNBJTSUBST

CMP5

CMP6

CMP2

DIODE

CMP16

DIODE

CMP3

DIODE

IS=IE-24

BV=

IBV=

IMAX=

XTI=

TNOM=21

KF=

AF=

ISR=

NR=

IKF=

NBV=

IBVL=

NBVL=

FFE=

RS=

CJO=2.593E-14

TT=

EG=

VJ=0.8971

M=2.292E-1

N=1.0029

FC=0.8

CMP11

DIODEMODELFORM

# DIODE MODEL #

MODEL = DBE

IS=I.40507E-17

BV=

IBV=

IMAX=

XTI=

TNOM=21

KF=

AF=

ISR=

NR=

IKF=

NBV=

IBVL=

NBVL=

FFE=

RS=

CJO=2.393E-14

TT=

EG=

VJ=0.729

M=0.44

N=1

FC=0.8

CMP10

DIODEMODELFORM

# DIODE MODEL #

MODEL = DBC

IS=IE-24

BV=

IBV=

IMAX=

XTI=

TNOM=21

KF=

AF=

ISR=

NR=

IKF=

NBV=

IBVL=

NBVL=

FFE=

RS=2.17347E2

CJO=8.974E-14

TT=

EG=

VJ=0.6

M=0.42

FC=0.8

CMP12

DIODEMODELFORM

# DIODE MODEL #

MODEL = DCS

NPN=yes

PNP=

VTF=0.8

ITF=2.21805486E-1

PTF=0

XTB=0.7

APPROXOB=yes

Forward

BF=1E6

IKF=1.4737E-1

ISE=7.094E-20

NE=1.006

VAF=4.4E1

NF=1

TF=5.3706E-12

XTF=20

Reverse

BR=1

IKR=1.1E-2

ISC=

NC=2

VAR=3.37

NR=1.005

TR=4E-9

Noise

KI=

AF=

KB=

AB=

FB=

Diode and junction

EG=1.17

IS=4.4746E-18

IMAX=

XTI=3

TNOM=21

Substrate

IS5=

NS=

Parasitics

RB-9.30144818

IRB=3.029562E-6

RBM=.1

RE=

RC=

Substrate

IS5=

NS=

CJC=2.7056E-14

VJC=.6775

MJC=0.3319

FC=0.8

CJE=7.474248E-14

VJE=0.9907

MJE=0.5063

CJS=

VJS=

MJS=

CMP68

BITMODELFORM

# BJT MODEL #

MODEL = BJTMODEL

XCJC=4.39790997E-1

This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more

precise and accurate design, please refer to the measured data in this data sheet.

Note: The value of beta was high (BF=1E6) to compensate for the fact that diode DBE reduces the current going into the

base (current flows through DBE). The diodes are necessary to model the non-linear effects.

SOT343 Package Model

L = 0.2 nH L = 0.7 nH

L = 0.2 nH

L = 0.15 nH

L = 0.22 nH

LLB

LLT1

LLLI

LL2

C2T1

CC1T1

CCEB

C=0.08 pF

AGROUND AGROUND

BASE COLLECTOR

EMITTER

C=0.05 pF

C=0.04 pF

L = 0.7 nH

CMP44

AGROUND

LLE

L = 0.1 nH

LT2

C2T2

C=0.1 pF

AGROUND

C1T2

L = 0.5 nH L = 0.2 nH

LL3

LT3

C1T3

CCEC

C2T3

C=0.1 pF

C=0.01 pF

AGROUND AGROUND

C=0.144 pF

C=0.05 pF

CCBC

Package Dimensions

SOT-343 (SC-70 4 Lead)

Part Number Ordering Information

Part Number Devices per Reel Container Tape Orientation

HBFP-0405-BLK 100 antistatic bag none

HBFP-0405-TR1 3000 7" Reel standard

HBFP-0405-TR2 10,000 13" Reel standard

HBFP-0405-TR3 3000 7" Reel reverse

b TYP

1.30 (0.051)

BSC

1.15 (.045) BSC

C TYP

DIMENSIONS ARE IN MILLIMETERS (INCHES)

DIMENSIONS

MIN.

0.80 (0.031)

0 (0)

0.25 (0.010)

0.10 (0.004)

1.90 (0.075)

2.00 (0.079)

0.55 (0.022)

0.450 TYP (0.018)

1.15 (0.045)

0.10 (0.004)

MAX.

1.00 (0.039)

0.10 (0.004)

0.35 (0.014)

0.20 (0.008)

2.10 (0.083)

2.20 (0.087)

0.65 (0.025)

1.35 (0.053)

0.35 (0.014)

SYMBOL

1.15 (.045) REF

1.30 (.051) REF

1.30 (.051)2.60 (.102)

0.55 (.021) TYP 0.85 (.033)

Device Orientation

Tape Dimensions

For Outline 4T

USER

FEED

DIRECTION COVER TAPE

CARRIER

TAPE

REEL END VIEW

8 mm

4 mm

TR1, TR2 TOP VIEW

END VIEW

8 mm

4 mm

TR3 TOP VIEW

02x 02x 02x 02x

8° MAX.

(CARRIER TAPE THICKNESS) T

(COVER TAPE THICKNESS)

5° MAX.

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

2.24 ± 0.10

2.34 ± 0.10

1.22 ± 0.10

4.00 ± 0.10

1.00 + 0.25

0.088 ± 0.004

0.092 ± 0.004

0.048 ± 0.004

0.157 ± 0.004

0.039 + 0.010

CAVITY

DIAMETER

PITCH

POSITION

1.55 ± 0.05

4.00 ± 0.10

1.75 ± 0.10

0.061 ± 0.002

0.157 ± 0.004

0.069 ± 0.004

PERFORATION

WIDTH

THICKNESS W

8.00 ± 0.30

0.255 ± 0.013 0.315 ± 0.012

0.010 ± 0.0005

CARRIER TAPE

CAVITY TO PERFORATION

(WIDTH DIRECTION)

CAVITY TO PERFORATION

(LENGTH DIRECTION)

3.50 ± 0.05

2.00 ± 0.05

0.138 ± 0.002

0.079 ± 0.002

DISTANCE

WIDTH

TAPE THICKNESS C

5.4 ± 0.10

0.062 ± 0.001 0.205 ± 0.004

0.0025 ± 0.00004

COVER TAPE

www.semiconductor.agilent.com

Data subject to change.

Obsoletes 5968-7939E

5988-0131EN (9/00)