IXGH60N60C3D1 - Zilog - Datasheet.Live

GenX3TM 600V IGBTs

with Diode

IXGH60N60C3D1

IXGT60N60C3D1

High Speed PT IGBTs for

40-100kHz switching

VCES = 600V

IC110 = 60A

VCE(sat) ≤ ≤

≤ ≤

≤

2.5V

tfi (typ) = 50ns

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ 600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC = 25°C, (Limited by Leads) 75 A

IC110 TC= 110°C 60 A

IF110 TC= 110°C 26 A

ICM TC= 25°C, 1ms 300 A

IATC= 25°C 40 A

EAS TC= 25°C 400 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 125 A

(RBSOA) Clamped Inductive Load VCE ≤ VCES

PCTC= 25°C 380 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-268 4 g

TO-247 6 g

DS100009B(01/10)

Features

zOptimized for Low Switching Losses

zSquare RBSOA

zHigh Avalanche Capability

zAnti-Parallel Ultra Fast Diode

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zHigh Frequency Power Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 (IXGH)

TO-268 (IXGT)

GCEC (Tab)

E

G

C (Tab)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC= 250µA, VCE = VGE 3.0 5.5 V

ICES VCE = VCES, VGE= 0V 50 µA

TJ = 125°C 1 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC= 40A, VGE = 15V 2.2 2.5 V

TJ = 125°C 1.7 V

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH60N60C3D1

IXGT60N60C3D1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF 2.7 V

TJ =150°C 1.6 V

IRM TJ = 100°C 4 A

trr TJ =100°C 100 ns

25 ns

RthJC 0.9 °C/W

IF = 30A, VGE = 0V, Note 1

IF = 30A, VGE = 0V, diF/dt =100 A/µs,

VR = 100V

IF = 1A; -di/dt = 100 A/µs, VR = 30V

Notes:

1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

e

∅ P

TO-247 (IXGH) Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitter Tab - Collector

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-268 (IXGT) Outline

Terminals: 1 - Gate 2 - Collector

3 - Emitter Tab - Collector

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 40A, VCE = 10V, Note 1 23 38 S

Cies 2810 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 210 pF

Cres 80 pF

Qg 115 nC

Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 22 nC

Qgc 43 nC

td(on) 21 ns

tri 33 ns

Eon 0.80 mJ

td(off) 70 110 ns

tfi 50 ns

Eoff 0.45 0.80 mJ

td(on) 21 ns

tri 33 ns

Eon 1.25 mJ

td(off) 112 ns

tfi 86 ns

Eoff 0.80 mJ

RthJC 0.33 °C/W

RthCK 0.21 °C/W

Inductive Load, TJ = 125°C

IC = 40A, VGE = 15V

VCE = 480V, RG = 3Ω

Note 2

Inductive Load, TJ = 125°C

IC = 40A, VGE = 15V

VCE = 480V, RG = 3Ω

Note 2

IXGH60N60C3D1

IXGT60N60C3D1

Fi g . 1. Ou tp u t C h ar acter i sti cs @ TJ = 25ºC

0

10

20

30

40

50

60

70

80

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics @ TJ = 25ºC

0

50

100

150

200

250

300

0246810121416

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

13V

7V

9V

11V

5V

Fi g . 3. Ou tp u t C h ar acter i sti cs @ TJ = 125ºC

0

10

20

30

40

50

60

70

80

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence of VCE(sat) on

Junction Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 80A

I

C

= 40A

I

C

= 20A

Fi g . 5. C o l l ecto r -to -Emi tter Vo l tag e

vs. Gate-to -Emi tter Vo l tag e

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 80A

40A

20A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

160

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH60N60C3D1

IXGT60N60C3D1

Fig. 7. Transconductance

0

10

20

30

40

50

60

70

0 20 40 60 80 100 120 140 160

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. R ever se-B i as Safe Oper ati n g Area

0

20

40

60

80

100

120

140

100 150 200 250 300 350 400 450 500 550 600

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 3

dv / dt < 10V / ns

Fi g . 11. Maximu m Tran si en t Ther mal I mp ed an ce

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse W idth - Seconds

Z

(th)JC

- ºC / W

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 10 20 30 40 50 60 70 80 90 100 110 120

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 40A

I

G

= 10 mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

IXGH60N60C3D1

IXGT60N60C3D1

Fig. 12. Inductive Switching Energy Loss

vs. Gate R esi stan ce

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

3 4 5 6 7 8 9 10 11 12 13 14 15

R

G

- Ohms

E

off

- MilliJoules

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 480V

I

C

= 80A

I

C

= 40A

Fig. 17. Inductive T urn-off Switching T imes

vs. Junction Temperature

20

40

60

80

100

120

140

160

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f - Nanoseconds

60

70

80

90

100

110

120

130

t

d

(

off

)

- Nanoseconds

t

f

td(off)

- - - -

R

G

= 3 , V

GE

= 15V

V

CE

= 480V I

C

= 80A

I

C

= 40A

Fig. 15. Inductive Turn-off Switching T imes

vs. Gate R esistance

60

70

80

90

100

110

120

130

140

150

160

170

3456789101112131415

R

G

- Ohms

t

f

- Nanoseconds

60

80

100

120

140

160

180

200

220

240

260

280

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC,

V

GE

= 15V

V

CE

= 480V

I

C

= 80A

I

C

= 40A

Fig. 13. Inductive Switching Energy Loss

vs. C ollector C ur r ent

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

20 25 30 35 40 45 50 55 60 65 70 75 80

I

C

- Amperes

E

off

- MilliJoules

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 3 , V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching Energy Loss

vs. Jun ctio n Temp eratu re

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 3 , V

GE

= 15V

V

CE

= 480V

I

C

= 80A

I

C

= 40A

Fig. 16. Inductive Turn-off Switching Times

vs. C o l l ecto r Cu r r en t

20

40

60

80

100

120

140

160

180

20 25 30 35 40 45 50 55 60 65 70 75 80

I

C

- Amperes

t

f

- Nanoseconds

60

70

80

90

100

110

120

130

140

t

d(off)

- Nanoseconds

t f

td(off)

- - - -

R

G

= 3 , V

GE

= 15V

V

CE

= 480V

T

J

= 125ºC

T

J

= 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH60N60C3D1

IXGT60N60C3D1

IXYS REF: G_60N60C3(6D)01-15-10-E

Fig. 19. Inductive T u rn-on Switching Times

vs. C o l l ecto r Cu r r en t

10

20

30

40

50

60

70

80

90

100

110

20 25 30 35 40 45 50 55 60 65 70 75 80

IC - Amperes

t

r

- Nanoseconds

18

19

20

21

22

23

24

25

26

27

28

t

d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

RG = 3 , VGE = 15V

VCE = 480V

TJ = 25ºC, 125ºC

Fig. 20. Inductive Turn-on

Switch in g Times vs. Jun ctio n Temp er at u r e

20

30

40

50

60

70

80

90

100

110

25 35 45 55 65 75 85 95 105 115 125

T

J - Degrees Centigrade

t r

- Nanoseconds

20

21

22

23

24

25

26

27

28

29

t d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

RG = 3 , VGE = 15V

VCE = 480V

I C = 40A

I C = 80A

Fig. 18. Inductive Turn-on Switching Times

vs. Gate R esi stan ce

0

20

40

60

80

100

120

140

3 4 5 6 7 8 9 101112131415

R

G - Ohms

t

r

- Nanoseconds

15

20

25

30

35

40

45

50

t

d

(

on

)

- Nanoseconds

t

r

t

d(on)

- - - -

TJ = 125ºC, VGE = 15V

VCE = 480V

I C = 40A

I C = 80A

200 600 10000 400 800

60

70

80

90

0.00001 0.0001 0.001 0.01 0.1 1

0.001

0.01

0.1

1

04080120160

0.0

0.5

1.0

1.5

2.0

Kf

TVJ

°C

-diF/dt

t

s

K/W

0 200 400 600 800 1000

0

5

10

15

20

0.00

0.25

0.50

0.75

1.00

VFR

diF/dt

V

200 600 10000 400 800

0

5

10

15

20

25

30

100 1000

0

200

400

600

800

1000

0123

0

10

20

30

40

50

60

IRM

Qr

IF

A

VF-diF/dt -diF/dt

A/µs

A

V

nC

A/µsA/µs

trr

ns tfr

ZthJC

A/µs

µs

DSEP 29-06

TVJ= 150°C

TVJ= 100°C

TVJ= 25°C

TVJ= 100°C

VR = 300V

IF= 60A

IF= 30A

IF= 15A

TVJ= 100°C

VR = 300V

TVJ= 100°C

VR = 300V

IF= 60A

IF= 30A

IF= 15A

Fig. 21 Forward current IF versus VFFig. 22 Reverse recovery charge Qr

versus -diF/dt

Fig. 23 Peak reverse current IRM

versus -diF/dt

tfr

VFR

IF= 60A

IF= 30A

IF= 15A

Qr

IRM

Fig. 24 Dynamic parameters Qr, IRM

versus TVJ

Fig. 25 Recovery time trr versus -diF/dt Fig. 26 Peak forward voltage VFR and

tfr versus diF/dt

Fig. 27 Transient thermal resistance junction to case

TVJ= 100°C

VR = 300V

Constants for ZthJC calculation:

iR

thi (K/W) ti (s)

1 0.502 0.0052

2 0.193 0.0003

3 0.205 0.0162

IXGH60N60C3D1

IXGT60N60C3D1

IXYS REF: G_60N60C3(6D)01-15-10-E