© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 3 1Publication Order Number:
NTJD1155L/D
NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
Level−Shift, P−Channel SC−88
The NTJD1155L integrates a P and N−Channel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The P−Channel device is specifically
designed as a load switch using ON Semiconductor state−of−the−art
trench technology. The N−Channel, with an external resistor (R1),
functions as a level−shift to drive the P−Channel. The N−Channel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
VIN and VON/OFF.
Features
•Extremely Low RDS(on) P−Channel Load Switch MOSFET
•Level Shift MOSFET is ESD Protected
•Low Profile, Small Footprint Package
•VIN Range 1.8 to 8.0 V
•ON/OFF Range 1.5 to 8.0 V
•ESD Rating of 3000 V
•Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Input Voltage (VDSS, P−Ch) VIN 8.0 V
ON/OFF Voltage (VGS, N−Ch) VON/OFF 8.0 V
Continuous Load Curren
t
(Note 1) Stead
y
State TA = 25°CIL±1.3 A
TA = 85°C±0.9
Power Dissipation
(Note 1) Stead
y
State TA = 25°CPD0.40 W
TA = 85°C 0.20
Pulsed Load Current tp = 10 msILM ±3.9 A
Operating Junction and Storage Temperature TJ,
TSTG −55 to
150 °C
Source Current (Body Diode) IS−0.4 A
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 kW)ESD 3.0 kV
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1) RqJA 320 °C/W
Junction−to−Foot – Steady State (Note 1) RqJF 220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
2,3
5
6
SIMPLIFIED SCHEMATIC
SC−88
(SOT−363)
CASE 419B
STYLE 30
MARKING
DIAGRAM
TB = Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
D2
1
S1
S2
4
2
D2
G1
5
D1/G2
6
4
Q2
Q1
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† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8.0 V 170 mW @ −2.5 V
130 mW @ −4.5 V
RDS(on) TYP
±1.3 A
ID MAXV(BR)DSS
260 mW @ −1.8 V
Device Package Shipping†
ORDERING INFORMATION
NTJD1155LT1 SC−88 3000/Tape & Reel
NTJD1155LT1G SC−88
(Pb−Free) 3000/Tape & Reel
1TB M G
G
1
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NTJD1155L
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Q2 Drain−to−Source Breakdown Voltage VIN VGS2 = 0 V, ID2 = 250 mA−8.0 V
Forward Leakage Current IFL VGS1 = 0 V,
VDS2 = −8.0 V TJ = 25°C 1.0 mA
TJ = 125°C 10
Q1 Gate−to−Source Leakage Current IGSS VDS1 = 0 V, VGS1 = ±8.0 V ±100 nA
Q1 Diode Forward On−Voltage VSD IS = −0.4 A, VGS1 = 0 V −0.8 −1.1 V
ON CHARACTERISTICS
ON/OFF Voltage VON/OFF 1.5 8.0 V
Q1 Gate Threshold Voltage VGS1(th) VGS1 = VDS1, ID = 250 mA0.4 1.0 V
Input Voltage VIN VGS1 = VDS1, ID = 250 mA1.8 8.0 V
Q2 Drain−to−Source On Resistance RDS(on) VON/OFF = 1.5 V VIN = 4.5 V
IL = 1.2 A 130 175 mW
VIN = 2.5 V
IL = 1.0 A 170 220
VIN = 1.8 V
IL = 0.7 A 260 320
Load Current ILVDROP ≤ 0.2 V, VIN = 5.0 V,
VON/OFF = 1.5 V 1.0 A
VDROP ≤ 0.3 V, VIN = 2.5 V,
VON/OFF = 1.5 V 1.0
1
2,3
5
6
Figure 1. Load Switch Application
4
Q2
Q1
6C1
CO
CI
R1
R2
R2
ON/OFF
VIN VOUT
LOAD
GND
Components Description Values
R1 Pullup Resistor Typical 10 kW to 1.0 W*
R2 Optional Slew−Rate Control Typical 0 to 100 kW*
CO, CIOutput Capacitance Usually < 1.0 mF
C1 Optional In−Rush Current Control Typical ≤ 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on.
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3
TYPICAL PERFORMANCE CUR VES (TJ = 25°C unless otherwise noted)
0
0.70
0.25
1.50.5 IL (AMPS)
VDROP (V)
0.15
0.05
0
Figure 2. Vdrop vs. IL @ Vin = 2.5 V Figure 3. Vdrop vs. IL @ Vin = 4.5 V
0.2
0.0
Figure 4. On−Resistance vs. Input Voltage
VIN (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (
W
)
Figure 5. On−Resistance Variation with
Temperature
−50 0−25 25
1.3
1.1
0.7 50 125100
Figure 6. Normalized On−Resistance Variation
with Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
0.8
TJ = 125°C
75 150
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.0
1.7
1.0 8.0
Figure 7. Switching Variation
R2 @ Vin = 4.5 V, R1 = 20 kW
3.02.5
0.4
0.10
0.20
0.30
IL = 1 A
VON/OFF = 1.5 to 8 V
TJ = 25°C
0.6
1.5
08
R2 (kW)
44
0
TIME (ms)
28
16
241
td(off)
3.0 5.0 7.0
0.06
0.01
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.31
0.16
Vin = 5 V
0.21
Vin = 1.8 V
0.9
56
0.45
0.40
0.35
0.50
0.55
0.60
0.65
2.0
TJ = 125°C
0
0.25
1.50.5 IL (AMPS)
VDROP (V)
0.15
0.05
0
TJ = 25°C
1.0 3.
0
2.5
0.10
0.20
0.30
0.45
0.40
0.35
0.50
2.0
TJ = 125°C
2.0 4.0 6.0 −50 0−25 25 50 12510075 15
0
0.11
0.26
Vin = 5 V
Vin = 1.8 V
IL = 1 A
VON/OFF = 1.5 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
40
24
12
36
20
8
32
4
IL = 1 A
VON/OFF = 1.5 to 8 V
IL = 1 A
VON/OFF = 1.5 to 8 V
0.3
0.1
0.5
0.7
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4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
Figure 8. Switching Variation
R2 @ Vin = 4.5 V, R1 = 20 kW
08
R2 (kW)
22
0
TIME (ms)
14
8
241
td(off)
56
IL = 1 A
Von/off = 3 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
20
12
6
18
10
4
16
2
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
SQUARE WAVE PULSE DURATION TIME t, (s)
0.1
10
0.01
SINGLE PULSE
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
100 10001010.10.010.001
1
0.2
D = 0.5
0.01 0.02
0.1 0.05
Normalized to RqJA at Steady State ( 1 inch pad)
Figure 9. Switching Variation
R2 @ Vin = 2.5 V, R1 = 20 kW
08
R2 (kW)
0
TIME (ms)
28
16
241
td(off)
56
IL = 1 A
VON/OFF = 1.5 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
40
24
12
36
20
8
32
4
Figure 10. Switching Variation
R2 @ Vin = 2.5 V, R1 = 20 kW
08
R2 (kW)
0
TIME (ms)
8
241
td(off)
56
IL = 1 A
Von/off = 3 V
Ci = 10 mF
Co = 1 mF
37
td(on)
tr
tf
12
6
10
4
2
Figure 11. FET Thermal Response
NTJD1155L
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5
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE W
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
−E−
b6 PL
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
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NTJD1155L/D
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