BT139-600E/DG,127 - NXP - Datasheet.Live

1. Product profile

1.1 General description

Planar passivated sensitive gate four quad rant triac in a SOT78 (TO-220AB) plastic

package intende d for use in applications requiring high b idirectional transient and blocking

voltage capability and high thermal cycling performance. Typical applications include

motor control, industria l and domestic lighting, heating and st atic switching. This sensitive

gate "series E" triac is intended to be interfaced directly to microcontrollers, logic

integrated circuits and other low power gate trigger cir cuits.

1.2 Features and benefits

Direct triggering from low power

drivers and logic ICs

High blocking voltage capability

Planar passivated for voltage

ruggedness and reliability

Sensitive gate

Triggering in all four quadrants

1.3 Applications

General purpose motor control General purpose switching

1.4 Quick reference data

BT139-600E

4Q Triac

Rev. 05 — 24 March 2011 Product data sheet

TO-220AB

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak

off-state voltage --600V

ITSM non-repetitive peak

on-state current full sine wave; Tj(init) =25°C;

tp= 20 ms; see Figure 4;

see Figure 5

--155A

IT(RMS) RMS on-state current full sine wave; Tmb ≤99 °C;

see Figure 1; see Figure 2;

see Figure 3

--16A

Product data sheet Rev. 05 — 24 March 2011 2 of 14

NXP Semiconductors BT139-600E

4Q Triac

2. Pinning information

3. Ordering information

Static characteristics

IGT gate trigger current VD=12V; I

T= 0.1 A; T2+ G+;

Tj=25°C; see Figure 7 -2.510mA

VD=12V; I

T= 0.1 A; T2+ G-;

Tj=25°C; see Figure 7 -410mA

VD=12V; I

T= 0.1 A; T2- G-;

Tj=25°C; see Figure 7 -510mA

VD=12V; I

T= 0.1 A; T2- G+;

Tj=25°C; see Figure 7 -1125mA

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphic sym bol

1 T1 main terminal 1

SOT78 (TO-220AB)

2 T2 main terminal 2

3 G gate

mb T2 mounti n g ba se ; main terminal 2

ym051

Table 3. Orderi ng information

Type number Package

Name Description Version

BT139-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB SOT78

BT139-600E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting

hole; 3-lead TO-220AB SOT78

Product data sheet Rev. 05 — 24 March 2011 3 of 14

NXP Semiconductors BT139-600E

4Q Triac

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 600 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤99 °C;

see Figure 1; see Figure 2; see Figure 3 -16A

ITSM non-repetitive peak on-state

current full sine wave; Tj(init) =25°C; t

p= 20 ms;

see Figure 4; see Figure 5 - 155 A

full sine wave; Tj(init) =25°C; t

p= 16.7 ms - 170 A

I2tI

2t for fusing tp= 10 ms; sine-wave pulse - 120 A2s

dIT/dt rate of rise of on-state current IT=20A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G+ -50A/µs

IT=20A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G- -50A/µs

IT=20A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2- G- -50A/µs

IT=20A; I

G= 0.2 A; dIG/dt = 0.2 A/µs;

T2- G+ -10A/µs

IGM peak gate current - 2 A

VGM peak gate voltage - 5 V

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

Fig 1. RMS on-state current as a function of surge

duration; maximum values Fig 2. RMS on-state current as a function of mounting

base temperature; ma ximum values

surge duration (s)

10−210110−1

001aab090

IT(RMS)

(A)

Tmb (°C)

−50 150100050

001aab091

IT(RMS)

(A)

(1)

Product data sheet Rev. 05 — 24 March 2011 4 of 14

NXP Semiconductors BT139-600E

4Q Triac

Fig 3. Total power dissipation as a function of RMS on-state current; maximum values.

Fig 4. Non-repetitive peak on-state curre nt as a function of the number of sinusoidal current cycles; maximum

values

IT(RMS) (A)

0 2015105

001aab093

Ptot

(W)

113

101

Tmb(max)

(°C)

125

107

119

α =

180

120

001aab102

120

160

ITSM

(A)

1 103

102

ITITSM

Tj(initial) = 25 °C max

Product data sheet Rev. 05 — 24 March 2011 5 of 14

NXP Semiconductors BT139-600E

4Q Triac

Fig 5. Non-repetitive peak on-state curre nt as a function of pulse width; maximum values

001aab092

T (ms)

10−2102

1010−11

102

103

ITSM

(A)

ITITSM

Tj(initial) = 25 °C max

(2)

(1)

Product data sheet Rev. 05 — 24 March 2011 6 of 14

NXP Semiconductors BT139-600E

4Q Triac

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to

mounting base half cycle; see Figure 6 --1.7K/W

full cycle; see Figure 6 --1.2K/W

Rth(j-a) thermal resistance from junction to

ambient in free air - 60 - K/W

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width

001aab098

10−1

10−2

Zth(j-mb)

(K/W)

10−3

tp (s)

10−511010−1

10−2

10−410−3

(2)

(1)

Product data sheet Rev. 05 — 24 March 2011 7 of 14

NXP Semiconductors BT139-600E

4Q Triac

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

IGT gate trigger current VD=12V; I

T= 0.1 A; T2+ G+; Tj=25°C;

see Figure 7 -2.510mA

VD=12V; I

T= 0.1 A; T2+ G-; Tj=25°C;

see Figure 7 -410mA

VD=12V; I

T= 0.1 A; T2- G-; Tj=25°C;

see Figure 7 -510mA

VD=12V; I

T= 0.1 A; T2- G+; Tj=25°C;

see Figure 7 -1125mA

ILlatching current VD=12V; I

G= 0.1 A; T2+ G+ ;

Tj= 25 °C; see Figure 8 -3.230mA

VD=12V; I

G= 0.1 A; T2+ G-; Tj=25°C;

see Figure 8 - 1640mA

VD=12V; I

G= 0.1 A; T2- G-; Tj=25°C;

see Figure 8 -430mA

VD=12V; I

G= 0.1 A; T2- G+; Tj=25°C;

see Figure 8 -5.540mA

IHholding current VD=12V; T

j=25°C; see Figure 9 -445mA

VTon-stat e vo ltage IT=20A; T

j=25°C; see Figure 10 -1.21.6V

VGT gate trigger voltage VD=12V; I

T= 0.1 A; Tj=25°C;

see Figure 11 -0.71.5V

VD= 400 V; IT= 0.1 A; Tj=125°C;

see Figure 11 0.25 0.4 - V

IDoff-state current VD= 600 V; Tj=125°C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage VDM =402V; T

j= 125 °C; exponential

waveform; gate open circuit -50-V/µs

tgt gate-controlled turn-on

time ITM =20A; V

D= 600 V; IG=0.1A;

dIG/dt = 5 A/µs -2-µs

Product data sheet Rev. 05 — 24 March 2011 8 of 14

NXP Semiconductors BT139-600E

4Q Triac

Fig 7. Normalized gate trigger cu rrent as a function of

junction temperature Fig 8. Normalized latching current as a function of

junction temperature

Fig 9. Normalized holding current as a function of

junction temperature Fig 10. On-state current as a function of on-state

voltage

Tj (°C)

−50 150100050

001aab448

IGT(Tj)

IGT(25°C)

(1)

(2)

(3)

(4)

Tj (°C)

−50 150100050

001aab100

IL(25°C)

Tj (°C)

−50 150100050

001aab099

IH(25°C)

001aab094

VT (V)

0321

(A)

(1) (3)(2)

Product data sheet Rev. 05 — 24 March 2011 9 of 14

NXP Semiconductors BT139-600E

4Q Triac

Fig 11. Normalized gate trigger voltage as a function of junction temperature

Tj (°C)

−50 150100050

001aab101

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Product data sheet Rev. 05 — 24 March 2011 10 of 14

NXP Semiconductors BT139-600E

4Q Triac

7. Package outline

Fig 12. Package outline SOT78 (TO-220AB)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT7

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

123

L1(1)

b1(2)

(3×)

b2(2)

(2×)

b(3×)

L2(1)

mounting

base

Product data sheet Rev. 05 — 24 March 2011 11 of 14

NXP Semiconductors BT139-600E

4Q Triac

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BT139-600E v.5 20110324 Product data sheet - BT139-600E v.4

Modifications: •Various changes to content.

BT139-600E v.4 20110224 Product data sheet - BT139_SER_E v.3

Product data sheet Rev. 05 — 24 March 2011 12 of 14

NXP Semiconductors BT139-600E

4Q Triac

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) de scribed in this document may have changed since this doc ument was pub lished and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, th e

full data sheet shall pre va il.

Product specifica t ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

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9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

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Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

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changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

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authorized or warranted to be suitable for use in life support, life-critical or

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malfunction of an NXP Semiconductors product can reasonably be expected

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damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

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products planned, as well as fo r the planned application and use of

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NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contai ns data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 05 — 24 March 2011 13 of 14

NXP Semiconductors BT139-600E

4Q Triac

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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the product is not suitable for aut omotive use. It i s neither qua lified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

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liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

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9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BT139-600E

4Q Triac

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 24 March 2011

Document identifier: BT139-600E

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .6

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .7

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13