AO3442
100V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 1A
R
DS(ON)
(at V
GS
=10V) < 630mΩ
R
DS(ON)
(at V
GS
=4.5V) < 720mΩ
Symbol
V
Parameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
The AO3442 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
100V
Drain-Source Voltage
100
V
Maximum Units
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Pulsed Drain Current
C
°C
Thermal Characteristics
Power Dissipation
B
P
D
T
A
=25°C W
1.4
0.9
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
T
A
=25°C
T
A
=70°C
Continuous Drain
Current A
I
D
1
0.8
4
V±20Gate-Source Voltage
Drain-Source Voltage 100 V
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
63 125
80
100
UnitsParameter Typ Max °C/W
R
θJA
70 90
Maximum Junction-to-Ambient
A
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
www.aosmd.com Page 1 of 5
AO3442
Symbol Min Typ Max Units
BV
DSS
100 V
V
DS
=100V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 1.7 2.3 2.9 V
I
D(ON)
4 A
514 630
T
J
=125°C 983 1200
554 720 mΩ
g
FS
2.8 S
V
SD
0.9 1.2 V
I
S
1 A
C
iss
100 pF
C
oss
13 pF
C
rss
5 pF
R
g
2.5 5 7.5 Ω
Q
g
(10V) 2.8 6 nC
Q
g
(4.5V) 1.5 3 nC
Q
gs
0.4 nC
Q
gd
0.8 nC
t
D(on)
5 ns
t
4
ns
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
=10V, V
=50V, R
=50
Ω
,
Reverse Transfer Capacitance V
GS
=0V, V
DS
=50V, f=1MHz
SWITCHING PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=50V, I
D
=1A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Turn-On Rise Time
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=1A
V
GS
=4.5V, I
D
=0.8A
Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=1A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS，
I
D
=250µA
V
DS
=0V, V
GS
=±20V
t
r
4
ns
t
D(off)
12 ns
t
f
5 ns
t
rr
52 ns
Q
rr
60 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=10V, V
DS
=50V, R
L
=50
Ω
,
R
GEN
=3Ω
Body Diode Reverse Recovery Charge I
F
=5.6A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
I
F
=5.6A, dI/dt=100A/µs
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Jun 2012 www.aosmd.com Page 2 of 5
AO3442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
200
400
600
800
1000
1200
0 0.5 1 1.5 2 2.5 3
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=0.8A
VGS=10V
ID=1A
VGS=4.5V
VGS=10V
0
1
2
3
4
5
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3.0V
3.5V
6V
5V 4.5V
10V
0
0.5
1
1.5
2
2.5
3
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
V
DS
=5V
25°C
40
0
200
400
600
800
1000
1200
0 0.5 1 1.5 2 2.5 3
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=0.8A
VGS=10V
ID=1A
0
300
600
900
1200
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
VGS=4.5V
VGS=10V
ID=1A
25°C
125°C
0
1
2
3
4
5
012345
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3.0V
3.5V
6V
5V 4.5V
10V
0
0.5
1
1.5
2
2.5
3
0123456
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
V
DS
=5V
25°C
Rev 0: Jun 2012 www.aosmd.com Page 3 of 5
AO3442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=50V
ID=1A
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100µs
10ms
0
2
4
6
8
10
0 0.5 1 1.5 2 2.5 3
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
VDS=50V
ID=1A
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
0.01 0.1 1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100µs
10ms
0.001
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
Rev 0: Jun 2012 www.aosmd.com Page 4 of 5
AO3442
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
DUT Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
rr
Q = - Idt
t
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Rev 0: Jun 2012 www.aosmd.com Page 5 of 5