ST300CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case TO-200AB (E-PUK) RoHS COMPLIANT * Lead (Pb)-free * Designed and qualified for industrial level TO-200AB (E-PUK) TYPICAL APPLICATIONS * DC motor controls PRODUCT SUMMARY * Controlled DC power supplies IT(AV) 650 A * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths VALUES UNITS 650 A 55 C 1290 A 25 C 50 Hz 8000 60 Hz 8380 50 Hz 320 60 Hz 292 A ITSM I2 t VDRM/VRRM Typical tq TJ kA2s 400 to 2000 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST300C..C VRSM, MAXIMUM NON-REPETITIVE IDRM/IRRM MAXIMUM PEAK VOLTAGE AT TJ = TJ MAXIMUM V mA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 Document Number: 94403 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com 50 www.vishay.com 1 ST300CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled I2t 55 (75) C t = 10 ms 8000 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing A 1290 t = 10 ms I2 t UNITS DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 650 (320) No voltage reapplied 100 % VRRM reapplied No voltage reapplied 8380 Sinusoidal half wave, initial TJ = TJ maximum 7040 320 292 226 100 % VRRM reapplied 3200 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.97 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.74 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.73 Ipk = 1635 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.18 VTM Maximum holding current IH Typical latching current IL kA2s 207 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 6730 600 TJ = 25 C, anode supply 12 V resistive load 1000 kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94403 Revision: 11-Aug-08 ST300CPbF Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 650 A TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. MAX. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 IGT TJ = 25 C Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD DC gate voltage not to trigger VGD TJ = TJ maximum A V 5.0 TJ = - 40 C DC gate current required to trigger W 20 TJ = TJ maximum, tp 5 ms Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - mA V 10.0 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 RthJ-hs RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.02 DC operation double side cooled 0.01 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.010 0.011 0.007 0.007 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 94403 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST300CPbF Series Vishay High Power Products Phase Control Thyristors 130 ST300C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/W 120 110 100 90 Conduction Angle 80 70 30 60 60 90 50 120 180 40 30 0 100 200 300 400 500 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) (Hockey PUK Version), 650 A 130 ST300C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.04 K/W 120 110 100 90 Conduction Period 80 30 70 60 60 90 50 120 40 180 30 DC 20 0 Average On-state Current (A) ST300C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.09 K/W 120 110 100 90 80 Conduction Period 70 60 50 30 60 90 120 40 30 180 20 0 200 400 DC 600 800 Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics 130 1600 180 120 90 60 30 1400 1200 1000 RMS Limit 800 600 400 Conduction Angle 200 ST300C..C Series T J = 125 C 0 0 Fig. 5 - On-State Power Loss Characteristics www.vishay.com 4 ST300C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.04 K/W Conduction Angle 60 90 120 180 0 200 400 600 800 1000 Maximum Average On-state Power Loss (W) Maximum Allowable Heatsink Temperature (C) Fig. 2 - Current Ratings Characteristics 30 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 200 400 600 800 1000 1200 1400 1800 DC 180 120 90 60 30 1600 1400 1200 1000 RMS Limit 800 600 Conduction Period 400 ST300C..C Series T J = 125 C 200 0 0 200 400 600 800 1000 1200 Average On-state Current (A) Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: ind-modules@vishay.com Document Number: 94403 Revision: 11-Aug-08 ST300CPbF Series 7500 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 650 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6500 6000 5500 5000 4500 4000 3500 ST300C..C Series 3000 1 10 100 8000 7500 7000 6500 6000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125 C No Voltage Reapplied Rated VRRM Reapplied 5500 5000 4500 4000 3500 ST300C..C Series 3000 0.01 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled T = 25C J TJ = 125C 1000 ST300C..C Series 100 0 1 2 3 4 5 6 7 8 9 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristcs 0.1 Steady State Value R thJ-hs = 0.09 K/W (Single Side Cooled) R thJ-hs = 0.04 K/W (Double Side Cooled) (DC Operation) 0.01 0.001 0.001 ST300C..C Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94403 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST300CPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 650 A Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) VGD IGD 0.1 0.001 Tj=-40C 1 Tj=25C Tj=125C Instantaneous Gate Voltage (V) 100 (1) Device: ST300C..C Series 0.01 (2) (3) (4) Frequency Limited by PG(AV) 0.1 1 Instantaneous Gate Current (A) 10 100 Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code ST 30 0 C 20 C 1 - PbF 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (E-PUK) 7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 - Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection) 9 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95075 For technical questions, contact: ind-modules@vishay.com Document Number: 94403 Revision: 11-Aug-08 Outline Dimensions Vishay Semiconductors TO-200AB (E-PUK) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 25.3 (0.99) DIA. MAX. Gate terminal for 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Document Number: 95075 Revision: 01-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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