1
®
FN8105.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2005, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
X28C010, X28HT010
5V, Byte Alterable EEPROM
The Intersil X28C010/X28HT010 is a 128K x 8 EEPROM,
fabricated with Intersil's proprietary, high performance,
floating gate CMOS technology. Like all Intersil
programmable non-volatil e memories, the
X28C010/X28HT010 is a 5V only device. The
X28C010/X28HT010 features the JEDEC approved pin out
for byte-wide memories, compatible with industry standard
EEPROMs.
The X28C010/X28HT010 supports a 256-byte page write
operation, effectively providing a 19µs/byte write cycle and
enabling the entire memory to be typically written in less
than 2.5 seconds. The X28C010/X28HT010 also features
DATA Polling and Toggle Bit Polling, system software
support schemes used to indicate the early completion of a
write cycle. In addition, the X28C010/X28HT010 supports
Software Data Protection option.
Intersil EEPROMs are designed and tested for applications
requiring extended endurance. Data retention is specified to
be greater than 100 years.
Features
• Access time: 120ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or VPP control
circuits
- Self-timed
• No erase before write
• No complex programming algorithms
• No overerase problem
• Low powe r CMO S
- Active: 50mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write™ cell
- Endurance: 100,000 write cycles
- Data retention: 100 years
• Early end of write detection
-DATA
polling
- Toggle bit polling
• X28HT010 is fuly functional @ +175°C
Pinouts
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
X28C010
CERDIP
Flat Pack
SOIC (R)
PGA
X28C010
(Bottom View)
14
A0
16
I/O
1
18
VSS
11
A3
9
A5
7
A7
15
I/O
017
I/O
219
I/O3
5
A15
2
NC
36
VCC
20
I/O
4
21
I/O
5
34
NC
23
I/O
7
25
A10
27
A11
29
A8
22
I/O
6
32
NC
24
CE
26
OE
28
A9
30
A13
13
A1
12
A2
10
A4
8
A6
4
A16 3
NC
1
NC
35
WE
33
NC
31
A14
6
A12
X28C010
(Top View)
A6
A5
A4
A3
A2
A1
A0
I/O0
A13
A8
A9
A11
A10
I/O7
A14
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
I/O6
A 12
A 15
A 16
NC
V CC
WE
NC
OE
CE
A7
30
EXTENDED LCC
22
23
24
25
26
27
28
29
21
6
5
8
7
9
10
11
12
13
23243 31
1
15 1716 18 19 2014
Data Sheet February 12, 2007
2FN8105.1
February 12, 2007
Ordering Information
PART NUMBER PART MARKING ACCESS
TIME TEMP RANGE
(°C) PACKAGE PKG. DWG #
X28C010D-12 X28C010D-12 120ns 0 to +70 32-Ld Cerdip F32.6
X28C010D-15 X28C010D-15 150ns 0 to +70 32-Ld Cerdip F32.6
X28C010DI X28C010DI - -40 to +85 32-Ld Cerdip F32.6
X28C010DI-12 X28C010DI-12 120ns -40 to +85 32-Ld Cerdip F32.6
X28C010DI-15 X28C010DI-15 150ns -40 to +85 32-Ld Cerdip F32.6
X28C010DM X28C010DM - -55 to +125 32-Ld Cerdip F32.6
X28C010DM-12 X28C010DM-12 120ns -55 to +125 32-Ld Cerdip F32.6
X28C010DM-15 X28C010DM-15 150ns -55 to +125 32-Ld Cerdip F32.6
X28C010DMB-12 C X28C010DMB-12 120ns MIL-STD-883 32-Ld Cerdip F32.6
X28C010DMB-15 C X28C010DMB-15 150ns MIL-STD-883 32-Ld Cerdip F32.6
X28C010DMB-20 C X28C010DMB-20 200ns MIL-STD-883 32-Ld Cerdip
X28C010FI-12 X28C010FI-12 120ns -40 to +85 32-Ld Flat Pack
X28C010FI-15 X28C010FI-15 150ns -40 to +85 32-Ld Flat Pack
X28C010FI-20 X28C010FI-20 200ns -40 to +85 32-Ld Flat Pack
X28C010FM X28C010FM - -55 to +125 32-Ld Flat Pack
X28C010FM-12 X28C010FM-12 120ns -55 to +125 32-Ld Flat Pack
X28C010FMB-12 C X28C010FMB-12 120ns MIL-STD-883 32-Ld Flat Pack
X28C010FMB-15 C X28C010FMB-15 150ns MIL-STD-883 32-Ld Flat Pack
X28C010K-25 X28C010K-25 250ns 0 to +70 36-Ld Pin Grid Array G36.760x760A
X28C010KM-12 X28C010KM-12 120ns -55 to +125 36-Ld Pin Grid Array G36.760x760A
X28C010KM-25 X28C010KM-25 250ns -55 to +125 36-Ld Pin Grid Array G36.760x760A
X28C010KMB-12 C X28C010KMB-12 120ns MIL-STD-883 36-Ld Pin Grid Array G36.760x760A
X28C010KMB-15 C X28C010KMB-15 150ns MIL-STD-883 36-Ld Pin Grid Array G36.760x760A
X28C010NM-12 X28C010NM-12 120ns -55 to +125 32-Ld Extended LCC
X28C010NM-15 X28C010NM-15 150ns -55 to +125 32-Ld Extended LCC
X28C010NMB-12 C X28C010NMB-12 120ns MIL-STD-883 32-Ld Extended LCC
X28C010NMB-15 C X28C010NMB-15 150ns MIL-STD-883 32-Ld Extended LCC
X28C010RI-12 X28C010RI-12 120ns -40 to +85 32-Ld Ceramic SOIC (Gull Wing)
X28C010RI-20 X28C010RI-20 200ns -40 to +85 32-Ld Ceramic SOIC (Gull Wing)
X28C010RI-20T1 X28C010RI-20 200ns -40 to +85 32-Ld Ceramic SOIC (Gull Wing)
X28C010RM-15 X28C010RM-15 150ns -55 to +125 32-Ld Ceramic SOIC (Gull Wing)
X28C010RMB-25 C X28C010RMB-25 250ns MIL-STD-883 32-Ld Ceramic SOIC (Gull Wing)
X28HT010W 200ns -40 to +175 Wafer
X28C010, X28HT010
3FN8105.1
February 12, 2007
Block Diagram
Pin Descriptions
Addresses (A0-A16)
The Address inputs select an 8-bit memory location during a
read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/write
operations. When CE is HIGH, power consumption is
reduced.
Output Enable (OE)
The Output Enabl e in pu t co ntrols the data output buffers,
and is used to initiate read operation s.
Data In/Data Out (I/O0-I/O7)
Data is written to or read from the X28C010/X28HT010
through the I/O pins.
Write Enab le (WE)
The Write Enable input controls the writing of data to the
X28C010/X28HT010.
Back Bias Voltage (VBB) (X28HT010 only)
It is required to provide -3V on pin 1. This negative voltage
improves higher temperature functionality.
Device Operation
Read
Read operations are initiated by both OE and CE LOW. The
read operation is terminated by either CE or OE returning
HIGH. This two line control architecture eliminates bus
contention in a system environment. The data bus will be in
a high impedance state when either OE or CE is HIGH.
Write
Write operations are initiated when both CE and WE are
LOW and OE is HIGH. The X28C010/X28HT010 supports
both a CE and WE controlled write cycle. That is, the
address is latched by the falling edge of either CE or WE,
whichever occurs last. Similarly, the data is latched internally
by the rising edge of either CE or WE, whichever occurs first.
A byte write operation, once initiated, will automatically
continue to completion, typicall y within 5ms.
X Buffers
Latches and
Decoder
I/O Buffers
and Latches
Y Buffers
Decoder
Control
Logic and
Timing
1Mbit
EEPROM
Array
I/O0-I/O7
Data Inputs/Outputs
CE
OE
VCC
VSS
WE
A0-A7Latches and
A8-A16
Pin Names
SYMBOL DESCRIPTION
A0-A16 Address Inputs
I/O0-I/O7Data Input/Output
WE Write Enable
CE Chip Enable
OE Output Enable
VCC +5V
VSS Ground
NC No Connect
VBB*-3V
*VBB applies to X28HT010 only.
X28C010, X28HT010
4FN8105.1
February 12, 2007
Page Write Operation
The page write feature of the X28C010/X28HT010 allows
the entire memory to be written in 5 seconds. Page write
allows two to two hundred fifty-six bytes of data to be
consecutively written to the X28C010/X28HT010 prior to the
commencement of the internal programming cycle. The host
can fetch data from another device within the system during
a page write operation (change the source address), but the
page ad d ress (A8 through A16) for each subsequent valid
write cycle to the part during this operation must be the same
as the initial page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host can
write an additional one to two hundre d fifty six bytes in the
same manner as the first byte was written. Each successive
byte load cycle, started by the WE HIGH to LOW transition,
must begin within 100µs of the falling edge of the preceding
WE. If a subsequent WE HIGH to LOW transition is not
detected within 100µs, the internal automatic programming
cycle will commence. There is no page write window
limitation. Effectively the page write window is infinitely wide,
so long as the host continues to access the device within the
byte load cycle time of 100µs.
Write Operation Status Bits
The X28C010/X28HT010 provides the user two write
operation status bits. These can be used to optimize a
system write cycle time. The status bits are mapped onto the
I/O bus as shown in Figure 1.
DATA Polling (I/O7)
The X28C010/X28HT010 features DATA Polling as a
method to indicate to the host system that the byte write or
page write cycle has completed. DATA Polling allows a
simple bit test operation to determine the status of the
X28C010/X28HT010, eliminati ng additional interrupt inputs
or external hardware. During the internal programming cycle,
any attempt to read the last byte written will produce the
complement of that data on I/O7 (i.e., write data = 0xx x xxxx,
read data = 1xxx xxxx). Once the programming cycle is
complete, I/O7 will reflect true data. Note: If the
X28C010/X28HT010 is in the prot ected state, and an illegal
write operation is attempted, DATA Polling will not operate.
Toggle Bit (I/O6)
The X28C010/X28HT010 also provides anothe r method for
determining when the internal write cycle is complete. During
the internal programming cycle, I/O6 will toggle from HIGH to
LOW and LOW to HIGH on subsequent attempts to read the
device. When the internal cycle is complete the toggling will
cease and the device will be accessible for additional read or
write operations.
DATA Polling I/O7
5TBDP 43210I/O
Reserved
Toggle Bit
DATA Polling
FIGURE 1. STATUS BIT ASSIGNMENT
CE
OE
WE
I/O7
X28C010
Last
Write
HIGH Z
VOL
VIH
A0-A14 AnAnAnAnAnAn
VOH
An
Ready
FIGURE 2. DATA POLLING BUS SEQUENCE
X28C010, X28HT010
5FN8105.1
February 12, 2007
DATA Polling can effectively halve the time for writing to the
X28C010/X28HT010. The timing diagram in Figure 2
illustrates the sequence of events on the bus. The software
flow diagram in Figure 3 illustrate s one method of
implementing the routine.
The Toggle Bit I/O6
Write Data
Save Last Data
and Address
Read Last
Address
IO7
Compare?
No
Yes
No
Yes
Writes
Complete?
Ready
X28C010
FIGURE 3. DATA POLLING SOFTWARE FLOW
CE
OE
WE
I/O6
X28C010
VOH
VOL
Last
Write
HIGH Z
* Beginning and ending state of I/O6 will vary
**
Ready
FIGURE 4. TOGGLE BIT BUS SEQUENCE
X28C010, X28HT010
6FN8105.1
February 12, 2007
The Toggle Bit can eliminate the software housekeeping
chore of saving and fetching the last addre ss and data
written to a device in order to implement DATA Polling. This
can be especially helpful in an array comprised of multiple
X28C010/X28HT010 memories that is fre quentl y updated.
Toggle Bit Polling can also provide a method for status
checking in multiprocessor applications. The timing diagram
in Figure 4 illustrates the sequence of events on the bus.
The software flow diagram in Figure 5 illustrates a method
for polling the Toggle Bit.
Hardware Data Protection
The X28C010/X28HT010 provides three hardware features
that protect nonvolatile data from inadvertent writes.
• Noise Protection—A WE pulse less than 10ns will not
initiate a write cycle.
• Default VCC Sense—All functions are inhibited when VCC
is ≤ 3.5V.
• Write inhibit—Holding either OE LOW, WE HIGH, or CE
HIGH will prevent an inadvertent write cycle during power-
up and power-down, maintaining data integrity.
Software Data Protection
The X28C010/X28HT010 offers a software controlled data
protection feature. The X28C010/X28HT010 is shipped from
Intersil with the software data protection NOT ENABLED:
that is the device will be in the standard operating mode. In
this mode data should be protected during power-up/-down
operations through the use of external circuits. The host
would then have open read and write access of the device
once VCC was stable.
The X28C010/X28HT010 ca n be automatically protected
during power-up and power-down without the need for
external circuits by employing the software data protection
feature. The internal software data protection circuit is
enabled after the first write operation utilizing the software
algorithm. This circuit is nonvolatile and will remain set for
the life of the device unless the reset command is issued.
Once the software protection is enabled, the
X28C010/X28HT010 is also protected from inadvertent and
accidental writes in the powered-up state. That is, the
software algorithm must be issued prior to writing additional
data to the device.
Software Algorithm
Selecting the software data protection mode requires the
host system to precede data write operations by a series of
three write operations to three specific addresses. Refer to
Figures 6 and 7 for the sequence. The three byte sequence
opens the page write window enabling the host to write from
one to two hundred fifty-six bytes of data. Once the page
load cycle has been completed, the device will automatically
be returned to the data protected state.
Load Accum
From Addr N
Compare
Accum with
Addr N
Ready
No
Yes
Last Write
Compare
Ok?
FIGURE 5. TOGGLE BIT SOFTWARE FLOW
X28C010, X28HT010
7FN8105.1
February 12, 2007
Software Data Protection
Regardless of whether the device has previously been
protected or not, once the software data protection algorithm
is used and data has been written, the X28C010/X28HT010
will automatically disable further writes unless another
command is issued to cancel it. If no further commands are
issued the X28C010/X28HT 010 will be write protected
during power-down and after any subsequent power-up. The
stat e of A15 and A16 while executing the algorithm is don’t
care.
Note: Once initiated, the sequence of write operations
should not be interrupted.
CE
WE
(VCC)
Write
Protected
VCC
0V
Data
Addr AA
5555 55
2AAA A0
5555
≤ tBLC MAX
Writes
Ok
Byte
or
Page
tWC
FIGURE 6. TIMING SEQUENCE—BYTE OR PAGE WRITE
Write Last
Byte
Last Address
Write Data 55
to Address
2AAA
Write Data A0
to Address
5555
Write Data XX
to Any
Address
After tWC
Re-Enters Data
Protected State
Write Data AA
to Address
5555
Byte/Page
Load Operation
Optional
FIGURE 7. WRITE SEQUENCE FOR SOFTW ARE DA TA
PROTECTION
X28C010, X28HT010
8FN8105.1
February 12, 2007
Resetting Software Data Protection
In the event the user wants to deactivate the software data
protection feature for testing or reprogramming in an
EEPROM programmer, the following six step algorithm will
reset the internal protection circuit. After tWC, the
X28C010/X28HT010 will be in standard operating mode.
Note: Once initiated, the sequence of write operations
should not be interrupted.
System Considerations
Because the X28C010/X28HT010 is frequently used in large
memory arrays, it is provided with a two line control
architecture for both read and write operations. Proper
usage can provide the lowest possible power dissipation and
eliminate the possibility of contention where multiple I/O pins
share the same bus.
To gain the most benefit, it is recommended that CE be
decoded from the address bus and be used as the primary
device selection input. Both OE and WE would then be
common among all devices in the array . For a read operation
this assures that all deselected devices are in their standby
mode and that only the selected device(s) is outputting data
on the bus.
Because the X28C010/X28HT010 has two power modes,
standby and active, proper decoupling of the memory array
is of prime concern. Enabling CE will cause transient current
spikes. The magnitude of these spikes is dependent on the
output capacitive loading of the I/Os. Therefore, the larger
the array sharing a common bus, the larger the transi ent
spikes. The voltage peaks associated with the current
transients can be suppressed by the proper selection and
placement of decoupling capacitors. As a minimum, it is
recommended that a 0.1µF high frequency cerami c
capacitor be used between VCC and VSS at each device.
Depending on the size of the array , the value of the capacitor
may have to be larger.
In addition, it is recommended that a 4.7µF electrolytic bulk
capacitor be placed between VCC and VSS for each eight
devices employed in the array. This bulk capacitor is
employed to overcome the voltage droop caused by the
inductive effects of the PC board traces.
CE
WE
Standard
Operating
Mode
VCC
Data
Addr
AA
5555
55
2AAA
80
5555 ≥ tWC
AA
5555
55
2AAA
20
5555
FIGURE 8. RESET SOFTWARE DATA PROTECTION TIMING SEQUENCE
Write Data 55
to Address
2AAA
Write Data 55
to Address
2AAA
Write Data 80
to Address
5555
Write Data AA
to Address
5555
Write Data 20
to Address
5555
Write Data AA
to Address
5555
FIGURE 9. SOFTW ARE SEQUENCE TO DEA CTIV A TE
SOFTWARE DATA PROTECTION
X28C010, X28HT010
9FN8105.1
February 12, 2007
Active Supply Current vs. Ambient Temperature
S tandby Supply Current vs. Ambient Temperature
ICC (RD) by Temperature Over Frequency
-55 -10 +125
12
14
16
18
Ambient Temperature (°C)
ICC WR (mA)
10
+35 +80
VCC = 5V
-55 -10 +125
0.15
0.2
0.25
0.3
Ambient Temperature (°C)
ISB (mA)
0.05
+35 +80
VCC = 5V
0.1
03 15
30
40
50
5.0 VCC
Frequency (MHz)
ICC RD (mA)
10
69
-55°C
+25°C
12
20
60
+125°C
X28C010, X28HT010
10 FN8105.1
February 12, 2007
Absolute Maximum Ratings Recommended Operating Conditions
Temperature under bias
X28C010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-10°C to +85°C
X28C010I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28C010M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +135°C
X28HT010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +175°C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Voltage on any pin with respect to VSS. . . . . . . . . . . . . . -1V to +7V
D.C. output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Lead temperature
(soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+300°C
Commercial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C tp +85°C
Military . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V ±10%
High Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +175°C
CAUTIO N : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional opera tion of
the device at these or any other conditions (above those indicated in the operational sections of this specification) is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
DC Electrical Specifications Over the recommended operating conditions, unless otherwise specified.
SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNIT
ICC VCC Current (Active) (TTL Inputs) CE = OE = VIL, WE = VIH, All I/O’s = Open,
Address Inputs = 0.4V/2.4V Levels @ f = 5MHz 50 mA
ISB1 VCC Current (Standby) (TTL Inputs) CE = VIH, OE = VIL, All I/O’s = Open, Other Inputs = VIH 3mA
ISB2 VCC Current (Standby) (CMOS
Inputs) CE = VCC - 0.3V, OE = VIL, All I/O’s = Open,
Other Inputs = VCC 500 µA
ILI Input Leakage Current VIN = VSS to VCC 10 µA
VIN = VSS to VCC (Note 2) 20 µA
ILO Output Leakage Current VOUT = VSS to VCC, CE = VIH 10 µA
VOUT = VSS to VCC, CE = VIH (Note 2) 20 µA
VlL (Note 1) Input LOW Voltage -1 0.8 V
(Note 2) -1 0.6 V
VIH (Note 1) Input HIGH Voltage 2V
CC + 1 V
(Note 2) 2.2 VCC + 1 V
VOL Output LOW Voltage IOL = 2.1mA 0.4 V
IOL = 1mA (Note 2) 0.5 V
VOH Output HIGH Voltage IOH = -400µA 2.4 V
IOH = -400µA 2.6 V
IBB Back Bias Current VBB = -3V ±10% (Note 2) 200 µA
NOTE:
1. VIL min. and VIH max. are for reference only and are not tested.
2. X28HT010W
Power-Up Timing
SYMBOL PARAMETER MAX UNIT
tPUR (Note 3) Power-up to Read operation 100 µs
tPUW (Note 3) Power-up to Write operation 5 ms
Capacitance TA = +25°C, f = 1MHz, VCC = 5V
SYMBOL PARAMETER TEST CONDITIONS MAX UNIT
CI/O (Note 3) Input/Output capacitance VI/O = 0V 10 pF
CIN (Note 3) Input capacitance VIN = 0V 10 pF
NOTE:
3. This parameter is periodically sampled and not 100% tested.
X28C010, X28HT010
11 FN8105.1
February 12, 2007
Equivalent A.C. Load Circuit
Symbol Table
Endurance and Data Retention
PARAMETER MIN MAX UNIT
Endurance 10,000 Cycles per byte
Endurance 100,000 Cycles per page
Data Retention 100 Years
A.C. Conditions of Test
Input pulse levels 0V to 3V
Input rise and fall times 10ns
Input and output timing levels 1.5V
Mode Selection
CE OE WE MODE I/O POWER
LLH Read D
OUT Active
LHL Write D
IN Active
H X X Standby and
Write Inhibit High Z Standby
X L X Write Inhibit — —
X X H Write Inhibit — —
5V
1.92kΩ
100pF
Output
1.37kΩ
WAVEFORM INPUTS OUTPUTS
Must be
steady
Will be
steady
May change
from LOW
to HIGH
Will change
from LOW
to HIGH
May change
from HIGH
to LOW
Will change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
Changing:
State Not
Known
N/A Center Line
is High
Impedance
AC Electrical Specifications Over the recommended operating conditions, unless other wise specified.
SYMBOL PARAMETER
X28C010-12 X28C010-15 X28C010-20,
X28HT010W X28C010-25
UNITMIN MAX MIN MAX MIN MAX MIN MAX
READ CYCLE LIMITS
tRC Read cycle time 120 150 200 250 ns
tCE Chip enable access time 120 150 200 250 ns
tAA Address access time 120 150 200 250 ns
tOE Output enable access time 50 50 50 50 ns
tLZ (Note 4) CE LOW to active output 0 0 0 0 ns
tOLZ (Note 4) OE LOW to active output 0 0 0 0 ns
tHZ (Note 4) CE HIGH to high Z output 50 50 50 50 ns
tOHZ (Note 4) OE HIGH to high Z output 50 50 50 50 ns
tOH Output hold from address change 0 0 0 0 ns
X28C010, X28HT010
12 FN8105.1
February 12, 2007
Read Cycle
NOTE:
4. tLZ min.,tHZ, tOLZ min., and tOHZ are periodically sampled and not 100% tested. tHZ max. and tOHZ max. are measured, with CL = 5pF, from the point
when CE or OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven.
tCE
tRC
Address
CE
OE
WE
Data Valid
tOE
tLZ
tOLZ
tOH
tAA
tHZ
tOHZ
Data I/O
VIH
HIGH Z
Data Valid
Write Cycle Limits
SYMBOL PARAMETER MIN MAX UNIT
tWC (Note 5) Write cycle time 10 ms
tAS Address setup time 0 ns
tAH Address hold time 50 ns
tCS Write setup time 0 ns
tCH Write hold time 0 ns
tCW CE pulse width 100 ns
tOES OE HIGH setup time 10 ns
tOEH OE HIGH hold time 10 ns
tWP WE pulse width 100 ns
tWPH WE HIGH recovery 100 ns
tDV Data valid 1µs
tDS Data setup 50 ns
tDH Data hold 0 ns
tDW Delay to next write 10 µs
tBLC Byte load cycle 0.2 100 µs
X28C010, X28HT010
13 FN8105.1
February 12, 2007
WE Controlled Write Cycle
NOTE:
5. tWC is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device
requires to complete internal write operation.
CE Controlled Write Cycle
Address
tAS
tWC
tAH
tOES
tDV
tDS tDH
tOEH
CE
WE
OE
Data In
Data Out HIGH Z
Data Valid
tCS tCH
tWP
tWPH
Address
tAS
tOEH
tWC
tAH
tOES
tWPH
tCS
tDV
tDS tDH
tCH
CE
WE
OE
Data In
Data Out
HIGH Z
Data Valid
tCW
X28C010, X28HT010
14 FN8105.1
February 12, 2007
Page Write Cycle
NOTES:
6. Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch
data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation.
7. The timings shown above are unique to page write operations. Individual byte load operations within the p age write must conform to either the
CE or WE controlled write cycle timing.
DATA Polling Timing Diagram (Not e 8)
WE
OE (Note 5)
Last Byte
Byte 0 Byte 1 Byte 2 Byte n Byte n+1 Byte n+2
tWP
tWPH
tBLC
tWC
CE
Address* (Note 7)
I/O
*For each successive write within the page write operation, A8-A16 should be the same or
writes to an unknown address could occur.
Address An
DIN = X
tWC
tOEH tOES
AnAn
CE
WE
OE
I/O7
tDW
DOUT = X DOUT = X
X28C010, X28HT010
15 FN8105.1
February 12, 2007
Toggle Bit Timing Diagram
NOTE:
8. Polling operations are by definition read cycles and are therefore subject to read cycle timings.
CE
OE
WE
I/O6
tOES
tDW
tWC
tOEH
HIGH Z
*
*
* I/O6 beginning and ending state will vary.
X28C010, X28HT010
16 FN8105.1
February 12, 2007
X28C010, X28HT010
Ceramic Dual-In-Line Frit Seal Packages (CERDIP)
NOTES:
1. Index area: A notch or a pin one identification mark shall be locat-
ed adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
bbb C A - B
S
c
Q
L
A
SEATING
BASE
D
PLANE
PLANE
-D-
-A-
-C-
-B-
α
D
E
S1
b2
b
A
e
M
c1
b1
(c)
(b)
SECTION A-A
BASE
LEAD FINISH
METAL
eA/2
A
M
SS
ccc C A - B
MD
SSaaa CA - B
MD
SS
eA
F32.6 MIL-STD-1835 GDIP1-T32 (D-16, CONFIGURATION A)
32 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
SYMBOL
INCHES MILLIMETERS
NOTESMIN MAX MIN MAX
A - 0.232 - 5.92 -
b 0.014 0.026 0.36 0.66 2
b1 0.014 0.023 0.36 0.58 3
b2 0.045 0.065 1.14 1.65 -
b3 0.023 0.045 0.58 1.14 4
c 0.008 0.018 0.20 0.46 2
c1 0.008 0.015 0.20 0.38 3
D - 1.690 - 42.95 5
E 0.500 0.610 12.70 15.49 5
e 0.100 BSC 2.54 BSC -
eA 0.600 BSC 15.24 BSC -
eA/2 0.300 BSC 7.62 BSC -
L 0.125 0.200 3.18 5.08 -
Q 0.015 0.060 0.38 1.52 6
S1 0.005 - 0.13 - 7
α90° 105° 90° 105° -
aaa - 0.015 - 0.38 -
bbb - 0.030 - 0.76 -
ccc - 0.010 - 0.25 -
M - 0.0015 - 0.038 2, 3
N32 328
Rev. 0 8/06
17 FN8105.1
February 12, 2007
Packaging Information
32-Lead Ceramic Flat Pack Type F
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
0.019 (0.48)
0.015 (0.38)
0.045 (1.14) Max.
Pin 1 Index
132
0.120 (3.05)
0.090 (2.29)
Min.
0.026 (0.66)
0.007 (0.18)
0.004 (0.10)
0.370 (9.40)
0.270 (6.86)
0.830 (21.08) Max.
0.050 (1.27) BSC
0.440
0.430 (10.93)
0.347 (8.82)
0.330 (8.38)
0.005 (0.13) Min.
0.030 (0.76)
Min.
1.228 (31.19)
1.000 (25.40)
X28C010, X28HT010
18 FN8105.1
February 12, 2007
Packaging Information
0.300 BSC
0.458 Max.
0.450 ± 0.008
Pin 1
0.035 x 45° Ref.
0.085 ± 0.010
0.020 (1.02) x 45° Ref.
Typ. (3) Plcs.
0.050 BSC
0.400 BSC
0.708 Max.
0.060/0.120
Pin #1 Index Corner
1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
2. TOLERANCE: ±1% NLT±0.005 (0.127)
0.700 ± 0.010
0.005/0.015
0.025 ± 0.003
0.050 ± 0.005
0.006/0.022
Detail A
Detail A
32-Pad Stretched Ceramic Leadless Chip Carrier Package Type N
NOTES:
X28C010, X28HT010
19 FN8105.1
February 12, 2007
Packaging Information
32-Lead Ceramic Small Outline Gull Wing Package Type R
1. ALL DIMENSIONS IN INCHES
2. FORMED LEAD SHALL BE PLANAR WITH RESPECT TO ONE ANOTHER WITHIN 0.004 INCHES
0.340
±0.007
See Detail “A”
For Lead
Information
0.440 Max.
0.560 Nom.
0.019
0.015
0.050
0.750
±0.005
0.830
Max.
0.060 Nom.
0.020 Min.
0.015 R Typ.
0.035 Min.
0.015 R
Typ.
0.035 Typ.
Detail “A”
0.560"
Typical
0.050"
Typical
0.050"
Typical
FOOTPRINT
0.030" Typical
32 Places
0.165 Typ.
NOTES:
X28C010, X28HT010
20
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No lice nse is gran t ed by i mpli catio n or other wise u nder an y p a tent or patent right s of Int ersi l or it s sub sidi aries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN8105.1
February 12, 2007
Packaging Information
36 Lead Ceramic Pin Grid Array Package
15 17 19 21 22
14 16 18 20 23
10 9 27 28
8 7 29 30
5 2 36 34 32
4 3 1 35 33
Typ. 0.100 (2.54)
All Leads
Pin 1 Index
NOTE: Leads 5, 14, 23, & 32
12 11 25 26
13
631
24
Typ. 0.180 (.010)
(4.57 ± .25)
4 Corners
0.770 (19.56)
0.750 (19.05)
SQ
A
A
0.185 (4.70)
0.175 (4.45)
0.020 (0.51)
0.016 (0.41)
0.072 (1.83)
0.062 (1.57)
0.120 (3.05)
0.100 (2.54)
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
Typ. 0.180 (.010)
(4.57 ± .25)
4 Corners
0.050 (1.27)
0.008 (0.20)
A
A
Package Code G36.760x760A
X28C010, X28HT010
