NCV8135 500 mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCV8135 is a 500 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage (VBIAS). The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to optimize performance for battery operated portable applications, the NCV8135 features low IQ consumption. The NCV8135 is offered in WDFN6 2 mm x 2 mm package, wettable flanks option available for Enhanced Optical Inspection. Features * * * * * * * * * * * Input Voltage Range: 0.4 V to 5.5 V Bias Voltage Range: 2.5 V to 5.5 V Fixed Output Voltage Versions Available 1% Accuracy over Temperature, 0.5% VOUT @ 25C Ultra-Low Dropout: Typ. 53 mV at 500 mA Very Low Bias Input Current of Typ. 35 mA Logic Level Enable Input for ON/OFF Control Output Active Discharge Option Available Stable with a 10 mF Ceramic Capacitor NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q100 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications * Automotive, Consumer and Industrial Equipment Point of Load * * * Regulation Battery-powered Equipment Smartphones, Tablets Cameras, DVRs, STB and Camcorders www.onsemi.com T MARKING DIAGRAM 1 XX M WDFN6 CASE 511BR XX = Specific Device Code M = Date Code PIN CONNECTIONS IN 1 GND 2 BIAS 3 Thermal Pad 6 OUT 5 SNS 4 EN (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 8 of this data sheet. VIN NCV8135 4.7 mF IN 0.1 mF EN VOUT 0.4 V up to 500 mA OUT BIAS VBIAS SNS 10 mF GND VEN Figure 1. Typical Application Schematic (c) Semiconductor Components Industries, LLC, 2016 July, 2019 - Rev. 1 1 Publication Order Number: NCV8135/D NCV8135 CURRENT LIMIT IN EN BIAS OUT ENABLE BLOCK 150 W *Active DISCHARGE UVLO VOLTAGE REFERENCE + - THERMAL LIMIT SNS GND *Active output discharge function is present only in NCV8135A option devices. Figure 2. Simplified Schematic Block Diagram www.onsemi.com 2 NCV8135 PIN FUNCTION DESCRIPTION Pin No. Pin Name 1 VIN Input Voltage Supply pin Description 2 GND Ground pin 3 VBIAS 4 EN 5 SNS 6 VOUT Pad Pad Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage Lockout Circuit. Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. Output voltage Sensing Input. Connect to Output voltage node on the PCB. Regulated Output Voltage pin Should be soldered to the ground plane for increased thermal performance. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN -0.3 to 6 V VOUT -0.3 to (VIN+0.3) 6 V VEN, VBIAS, VSNS -0.3 to 6 V tSC unlimited s Input Voltage (Note 1) Output Voltage Chip Enable, Bias and SNS Input Output Short Circuit Duration Maximum Junction Temperature TJ 125 C TSTG -55 to 150 C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 ESD Machine Model tested per AEC-Q100-003 Latchup Current Maximum Rating 100 mA per AEC-Q100-004. THERMAL CHARACTERISTICS Rating Thermal Characteristics, WDFN6 2 mm x 2 mm Thermal Resistance, Junction-to-Air (Note 3) Symbol Value Unit RqJA 97 C/W 3. This data was derived by thermal simulations based on the JEDEC JESD51 series standards methodology. Only a single device mounted at the center of a high K (2s2p) 3 in x 3 in multilayer board with 1-ounce internal planes and 1-ounce copper on top and bottom. Top copper layer has a dedicated 25 sq mm copper area. www.onsemi.com 3 NCV8135 ELECTRICAL CHARACTERISTICS -40C TJ 125C; VBIAS = 2.7 V or (VOUT + 1.6 V), whichever is greater, VIN = VOUT(NOM) + 0.3 V, IOUT = 1 mA, VEN = 1 V, CIN = 4.7 mF, COUT = 10 mF, CBIAS = 1 mF, unless otherwise noted. Typical values are at TJ = +25C. Min/Max values are for -40C TJ 125C unless otherwise noted. (Note 4) Parameter Symbol Min Operating Input Voltage Range VIN Operating Bias Voltage Range VBIAS Undervoltage Lock-out Test Conditions VBIAS Rising Hysteresis Max Unit VOUT + VDO 5.5 V (VOUT + 1.50) 2.5 5.5 V UVLO Output Voltage Accuracy 1.6 0.2 VOUT VOUT Typ V % 0.5 Output Voltage Accuracy -40C TJ 125C, VOUT(NOM) + 0.3 V VIN VOUT(NOM) + 1.0 V, 2.7 V or (VOUT(NOM) + 1.6 V), whichever is greater < VBIAS < 5.5 V, 1 mA < IOUT < 500 mA VIN Line Regulation VOUT(NOM) + 0.3 V VIN 5.0 V LineReg 0.01 %/V VBIAS Line Regulation 2.7 V or (VOUT(NOM) + 1.6 V), whichever is greater < VBIAS < 5.5 V LineReg 0.01 %/V Load Regulation IOUT = 1 mA to 500 mA LoadReg 0.5 VIN Dropout Voltage IOUT = 500 mA (Note 5) VDO 53 VBIAS Dropout Voltage IOUT = 500 mA, VIN = VBIAS (Notes 5, 6) VDO Output Current Limit VOUT = 90% VOUT(NOM) ICL SNS Pin Operating Current -1.0 +1.0 % mV 100 mV 1.1 1.5 V 820 1200 mA ISNS 0.01 0.5 mA IBIASQ 35 55 mA 600 Bias Pin Quiescent Current VBIAS = 2.7 V, IOUT = 0 mA Bias Pin Disable Current VEN 0.4 V IBIAS(DIS) 0.2 1 mA Vinput Pin Disable Current VEN 0.4 V IVIN(DIS) 0.01 1 mA EN Pin Threshold Voltage EN Input Voltage "H" VEN(H) EN Input Voltage "L" VEN(L) EN Pull Down Current VEN = 5.5 V IEN Turn-On Time From assertion of VEN to VOUT = 98% VOUT(NOM) VOUT(NOM) = 0.4 V VOUT(NOM) = 1.2 V tON Power Supply Rejection Ratio VIN to VOUT, f = 1 kHz, IOUT = 10 mA, VIN VOUT +0.5 V, VOUT(NOM) = 0.4 V VBIAS to VOUT, f = 1 kHz, IOUT = 10 mA, VIN VOUT +0.5 V, VOUT(NOM) = 0.4 V Output Noise Voltage VIN = VOUT +0.5 V, f = 10 Hz to 100 kHz VOUT(NOM) = 0.4 V VOUT(NOM) = 1.2 V Thermal Shutdown Threshold Temperature increasing Output Discharge Pull-Down VEN 0.4 V, VOUT = 0.5 V, NCV8135A options only V 0.9 0.4 0.3 150 275 1 mA ms PSRR(VIN) 73 dB PSRR(VBIAS) 90 dB VN 28.7 40.3 160 Temperature decreasing mVRMS C 140 RDISCH 150 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 3% below VOUT(NOM). 6. For output voltages below 0.9 V, VBIAS dropout voltage does not apply due to a minimum Bias operating voltage of 2.5 V. www.onsemi.com 4 NCV8135 TYPICAL CHARACTERISTICS 90 80 +125C 70 +85C 60 +25C 50 40 30 -40C 20 10 0 0 100 200 400 300 25 VDO (VIN - VOUT) DROPOUT VOLTAGE (mV) 100 500 IOUT, OUTPUT CURRENT (mA) IOUT = 100 mA 20 +125C 15 60 50 40 30 20 +25C 10 0 1.5 2.0 2.5 -40C 3.0 3.5 4.0 4.5 5.0 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VBIAS - VOUT (V) 5.5 100 90 IOUT = 500 mA +125C 80 +85C 70 60 50 40 30 +25C 20 -40C 10 0 1.5 VBIAS - VOUT (V) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VBIAS - VOUT (V) 50 mV/div Figure 6. VIN Dropout Voltage vs. (VBIAS - VOUT) and Temperature TJ VOUT 200 mA/div 50 mV/div -40C 5 Figure 5. VIN Dropout Voltage vs. (VBIAS - VOUT) and Temperature TJ 200 mA/div +25C Figure 4. VIN Dropout Voltage vs. (VBIAS - VOUT) and Temperature TJ IOUT = 300 mA +125C +85C +85C 10 Figure 3. VIN Dropout Voltage vs. IOUT and Temperature TJ VDO (VIN - VOUT) DROPOUT VOLTAGE (mV) VDO (VIN - VOUT) DROPOUT VOLTAGE (mV) VDO (VIN - VOUT) DROPOUT VOLTAGE (mV) At TJ = +25C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.7 V, VEN = 1.0 V, VOUT(NOM) = 0.4 V, IOUT = 500 mA, CIN = 1 mF, CBIAS = 0.1 mF, and COUT = 10 mF (effective capacitance value), unless otherwise noted. tR = tF = 1 ms IOUT VOUT tR = tF = 1 ms IOUT 50 ms/div 50 ms/div Figure 7. Load Transient Response, IOUT = 50 mA to 500 mA, COUT = 10 mF Figure 8. Load Transient Response, IOUT = 50 mA to 500 mA, COUT = 22 mF www.onsemi.com 5 5.5 NCV8135 TYPICAL CHARACTERISTICS 50 mV/div VOUT 200 mA/div VOUT tR = tF = 1 ms IOUT tR = tF = 1 ms IOUT 500 ms/div Figure 10. Load Transient Response, IOUT = 1 mA to 500 mA, COUT = 22 mF 10 mV/div 500 ms/div Figure 9. Load Transient Response, IOUT = 1 mA to 500 mA, COUT = 10 mF VOUT VOUT tR = tF = 1 ms 10 mA/div tR = tF = 1 ms IOUT IOUT 500 ms/div 500 ms/div Figure 11. Load Transient Response, IOUT = 1 mA to 20 mA, COUT = 10 mF Figure 12. Load Transient Response, IOUT = 1 mA to 20 mA, COUT = 22 mF 500 mV/div 500 mV/div 10 mA/div 10 mV/div 200 mA/div 50 mV/div At TJ = +25C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.7 V, VEN = 1.0 V, VOUT(NOM) = 0.4 V, IOUT = 500 mA, CIN = 1 mF, CBIAS = 0.1 mF, and COUT = 10 mF (effective capacitance value), unless otherwise noted. VENABLE VENABLE VOUT IOUT 200 mA/div 100 mV/div 100 mV/div VOUT 100 ms/div Figure 13. Enable Transient Response, IOUT = 0 mA, COUT = 10 mF 100 ms/div Figure 14. Enable Transient Response, Output Resistive Load 500 mA, COUT = 22 mF www.onsemi.com 6 NCV8135 TYPICAL CHARACTERISTICS 20 mV/div 20 mV/div At TJ = +25C, VIN = VOUT(NOM) + 0.3 V, VBIAS = 2.7 V, VEN = 1.0 V, VOUT(NOM) = 0.4 V, IOUT = 500 mA, CIN = 1 mF, CBIAS = 0.1 mF, and COUT = 10 mF (effective capacitance value), unless otherwise noted. VOUT VOUT VIN 50 ms/div 50 ms/div Figure 15. VIN Line Transient Response, VIN = 0.7 V to 1.7 V, IOUT = 100 mA, CIN = 0, COUT = 10 mF Figure 16. VIN Line Transient Response, VIN = 0.7 V to 1.7 V, IOUT = 100 mA, CIN = 0, COUT = 22 mF -120 VIN = 0.9 V, VBIAS = 2.7 V, COUT = MLCC 1206 -110 -100 10 mA, COUT = 10 mF -90 10 mA, COUT = 22 mF -80 -70 -60 -50 -40 -30 -20 100 mA, COUT = 10 mF -10 100 mA, COUT = 22 mF 0 10 100 1k 10k 100k 1M 10M 10 -120 10 mA, COUT = 22 mF -110 10 mA, COUT = 10 mF -100 -90 -80 -70 -60 -50 -40 -30 100 mA, COUT = 10 mF -20 100 mA, COUT = 22 mF -10 0 10 VIN = 0.9 V, VBIAS = 2.7 V, COUT = MLCC 1206 10 100 1k 10k 100k 1M FREQUENCY (Hz) Figure 17. VIN Power Supply Rejection Ratio vs. Frequency Figure 18. VBIAS Power Supply Rejection Ratio vs. Frequency 500 mA 22 mF 100 mA 22 mF 10 mA 22 mF 1 mA 22 mF 1 mA 10 mF 1000 RMS Output Noise Voltage (mV) IOUT COUT 10 Hz - 100 kHz 10 mF 28.67 27.54 22 mF 28.19 27.28 10 mA 22 mF 36.23 35.49 100 mA 22 mF 45.44 44.87 500 mA 22 mF 54.54 54.04 1 mA 100 1 mA 10 1 10 10M FREQUENCY (Hz) 10000 OUTPUT NOISE (nV/Hz) tR = tF = 5 ms 500 mV/div VIN PSSR (dB) PSSR (dB) 500 mV/div tR = tF = 5 ms VIN = 0.9 V, VBIAS = 2.7 V, COUT = MLCC 1206 100 1k 10k 100k FREQUENCY (Hz) 1M 10M Figure 19. Output Voltage Noise Spectral Density www.onsemi.com 7 100 Hz - 100 kHz NCV8135 APPLICATIONS INFORMATION the NCV8135 respective pins directly in the device PCB copper layer, not through vias having not negligible impedance. When using small ceramic capacitor, their capacitance is not constant but varies with applied DC biasing voltage, temperature and tolerance. The effective capacitance can be much lower than their nominal capacitance value, most importantly in negative temperatures and higher LDO output voltages. That is why the recommended Output capacitor capacitance value is specified as Effective value in the specific application conditions. The NCV8135 dual-rail very low dropout voltage regulator is using NMOS pass transistor for output voltage regulation from VIN voltage. All the low current internal control circuitry is powered from the VBIAS voltage. The use of an NMOS pass transistor offers several advantages in applications. Unlike PMOS topology devices, the output capacitor has reduced impact on loop stability. Vin to Vout operating voltage difference can be very low compared with standard PMOS regulators in very low Vin applications. When enabled from Enable (EN) input, the NCV8135 offers smooth monotonic start-up. The controlled voltage rising limits the inrush current. The Enable (EN) input is equipped with internal hysteresis. Enable Operation The enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. To get the full functionality of soft-start, it is recommended to turn on the VIN and VBIAS supply voltages first and activate the Enable pin no sooner than when VIN and VBIAS are on their nominal levels. If the enable function is not to be used then the pin should be connected to VIN or VBIAS. Dropout Voltage Because of two power supply inputs VIN and VBIAS and one VOUT regulator output, there are two Dropout voltages specified. The first, the VIN Dropout voltage is the voltage difference (VIN - VOUT) when VOUT starts to decrease by percent specified in the Electrical Characteristics table. VBIAS is high enough; specific value is published in the Electrical Characteristics table. The second, VBIAS dropout voltage is the voltage difference (VBIAS - VOUT) when VIN and VBIAS pins are joined together and VOUT starts to decrease. Current Limitation The internal Current Limitation circuitry allows the device to supply the full nominal current and surges but protects the device against Current Overload or Short. Thermal Protection Internal thermal shutdown (TSD) circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When TSD activated, the regulator output turns off. When cooling down under the low temperature threshold, device output is activated again. This TSD feature is provided to prevent failures from accidental overheating. Activation of the thermal protection circuit indicates excessive power dissipation or inadequate heatsinking. For reliable operation, junction temperature should be limited to +125C maximum. Input and Output Capacitors The device is designed to be stable for ceramic output capacitors with Effective capacitance in the range from 10 mF to 22 mF. The device is also stable with multiple capacitors in parallel, having the total effective capacitance in the specified range. In applications where no low input supplies impedance available (PCB inductance in VIN and/or VBIAS inputs as example), the recommended CIN = 1 mF and CBIAS = 0.1 mF or greater. Ceramic capacitors are recommended. For the best performance all the capacitors should be connected to ORDERING INFORMATION Device Marking Voltage Option NCV8135AMT040TBG KA 0.4 V Output Active Discharge NCV8135BMT040TBG KC 0.4 V Non-Active Discharge NCV8135AMT120TBG KE 1.2 V Output Active Discharge NCV8135AMTW040TBG K2 0.4 V Output Active Discharge NCV8135BMTW040TBG K3 0.4 V Non-Active Discharge NCV8135AMTW120TBG K4 1.2 V Output Active Discharge NCV8135AMTW075TBG (In Development) KL 0.75 V Output Active Discharge Package Shipping WDFN6 (Non-Wettable Flank) (Pb-Free) 3000 / Tape & Reel WDFN6 (Wettable Flank) (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. To order other package and voltage variants, please contact your ON Semiconductor sales representative www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511BR ISSUE B EE EE CC SCALE 4:1 D A B A1 0.10 C 0.10 C ALTERNATE B-1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. FOR DEVICES CONTAINING WETTABLE FLANK OPTION, DETAIL A ALTERNATE CONSTRUCTION A-2 AND DETAIL B ALTERNATE CONSTRUCTION B-2 ARE NOT APPLICABLE. MOLD CMPD ALTERNATE B-2 ALTERNATE CONSTRUCTIONS E L L DIM A A1 A3 b D D2 E E2 e L L1 L1 TOP VIEW ALTERNATE A-1 ALTERNATE A-2 DETAIL A A3 DETAIL B 0.05 C EE EE CC EXPOSED Cu DETAIL B III III III PIN ONE REFERENCE A3 DATE 19 JAN 2016 ALTERNATE CONSTRUCTIONS A 6X 0.05 C A1 NOTE 4 C SIDE VIEW D2 DETAIL A 1 3 SEATING PLANE GENERIC MARKING DIAGRAM* 1 L XX M XX = Specific Device Code M = Date Code E2 6 4 6X *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. b e BOTTOM VIEW MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.90 1.10 0.65 BSC 0.20 0.40 --0.15 0.10 M C A 0.05 M C B RECOMMENDED MOUNTING FOOTPRINT NOTE 3 1.72 6X 0.45 1.12 PACKAGE OUTLINE 6X 0.40 2.30 1 0.65 PITCH DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON55829E WDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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