All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
0
5
10
15
20
25
30
35
40
-60
-55
-50
-45
-40
-35
-30
-25
-20
31 33 35 37 39 41 43 45 47 49
Efficiency (%)
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
ACPR
Efficiency
IMD Up
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—veried by design/characterization in Inneon testxture)
VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 18 — dB
Drain Efciency hD — 29 — %
Adjacent Channel Power Ratio ACPR — –36 — dBc
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 to 2170 frequency band. Features
include I/O matching, high gain, and thermally-enhanced ceramic
open-cavity packages with slotted and earless anges. Manufactured with
Inneon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB211503EL
H-33288-6
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance at 2170
MHz, 30 V
- Average output power = 32 W
- Linear Gain = 18 dB
- Efciency = 29%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 150 W
- Efciency = 55%
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
ampliers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-Free and RoHS compliant
PTFB211503FL
H-34288-4/2
Data Sheet 2 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurement (tested in Inneon test xture)
VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 16.5 18 — dB
Drain Efciency hD 39 40 — %
Intermodulation Distortion IMD — –30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.08 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 150 W CW) RqJC 0.27 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFB211503EL V1 H-33288-6 Slotted ange, single-ended Tray
PTFB211503EL V1 R250 H-33288-6 Slotted ange, single-ended Tape & Reel 250 pcs
PTFB211503FL V2 H-34288-4/2 Earless ange, single-ended Tray
PTFB211503FL V2 R250 H-34288-4/2 Earless ange, single-ended Tape & Reel 250 pcs
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Data Sheet 3 of 14 Rev. 04, 2011-03-07
0
10
20
30
40
15
16
17
18
19
31 33 35 37 39 41 43 45 47 49
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84MHz
Gain
Efficiency
Drain Efficiency (%)
-55
-50
-45
-40
-35
-30
-25
31 33 35 37 39 41 43 45 47 49
Drain Efficiency (%)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
2170 Low
2170 Up
2140 Low
2140 Up
2110 Low
2110 Up
0
5
10
15
20
25
30
35
40
-60
-55
-50
-45
-40
-35
-30
-25
-20
31 33 35 37 39 41 43 45 47 49
Drain Efficiency (%)
ACP (dBc)
Output Power (dBm)
Single-carrier WCDMA Drive-Up
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz
ACP Low
Efficiency
ACP Up
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
2080 2100 2120 2140 2160 2180 2200
IRL (dB), ACP up (dBc)
Frequency (MHz)
Single-carrier WCDMA, 3GPP Broadband
V
DD
= 30 V, I
DQ
= 1.20 A, P
OUT
= 40 W
Efficiency
IRL
ACP
Gain (dB), Efficiency (%)
Gain
Typical Performance (data taken in a production test xture)
Data Sheet 4 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
0
10
20
30
40
50
15
16
17
18
19
20
40 42 44 46 48 50 52 54
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Efficiency
Gain
0
10
20
30
40
50
-65
-55
-45
-35
-25
-15
40 42 44 46 48 50 52 54
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
Efficiency
IMD3
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
15
20
25
30
35
40
45
50
55
60
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 1.20 A, P
OUT
= 63 W
Gain
Efficiency
IRL
IMD3
Return Loss (dB), IMD (dBc)
Gain (dB), Efficiency (%)
-70
-60
-50
-40
-30
-20
41 43 45 47 49 51 53
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
V
DD
= 30 V, I
DQ
= 1.20 A, tone spacing = 1 MHz
2170MHz
2140MHz
2110MHz
Typical Performance (cont.)
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Data Sheet 5 of 14 Rev. 04, 2011-03-07
15
16
17
18
41 43 45 47 49 51 53
Power Gain (dB)
Output Power (dBm)
CW Performance
Gain vs. Output Power
V
DD
= 30 V, ƒ = 2170 MHz
I
DQ
= 1.40 A
I
DQ
= 0.80 A
I
DQ
= 1.20 A
10
20
30
40
50
60
14
15
16
17
18
19
42 44 46 48 50 52
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ= 2170 MHz
Gain
Efficiency
+25ºC
+85ºC
–10ºC
-70
-60
-50
-40
-30
-20
40 45 50 55
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion
vs. Output Power
V
DD
= 30 V, I
DQ
= 1.20 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
3rd Order
7th
5th
Typical Performance (cont.)
Data Sheet 6 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
0.1
0.3
0.5
0.2
0.4
0.1
0.3
0
.5
0
0.2
0.4
0.6
0.1
0.3
0.5
0
.2
0.4
0
.6
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.45
0
.0
5
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Nornalized to 50 Ohms
b211503efl
db211503efl Oct. 14, 2009 1:47:14 PM
Z Source
Z Load
2080 MHz
2200 MHz
Z0 = 50 W
Z Source Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
2200 2.06 –6.08 2.19 –4.73
2170 2.17 –6.33 2.19 –4.82
2140 2.30 –6.59 2.20 –4.91
2110 2.43 –6.86 2.21 –5.00
2080 2.58 –7.14 2.22 –5.09
See next page for reference circuit information
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Data Sheet 7 of 14 Rev. 04, 2011-03-07
PTFB211503EL/FL_INPUT
C101
10 pF
C102
10 pF
C801
1000 pF
C802
1000 pF
C803
1000 pF
TL101
TL102
TL103
TL104 TL105
1
2
3
4
TL106
TL107 TL108
TL109
1 2
3
TL110
TL111 TL112
TL113
TL114
TL115
TL116
TL117
TL118
TL119
TL120
TL121
TL122
TL123
TL124
TL125
TL126
TL127
TL128 TL129
R101
10 Ohm
TL130
1
2
3
4
TL131
C103
4710000 pF
C104
4710000 pF
TL132
TL133
TL134 TL135
R801
1200 Ohm
R802
1300 Ohm
R803
10 Ohm
R804
100 Ohm R805
10 Ohm
1
2
3
TL136
1
2
3
TL137
1
2
3
TL138
12
3
TL139
RF_IN
In Out
NC NC
1
2 3
45
6 7
8
S1
TL140
C105
0.6 pF
C106
2.2 pF
C107
8.2 pF
R104
10 Ohm
S
C
B
E
1
2
3
4S2
3
S3
b211503efl_bdin_08-19-2010
GATE DUT
(Pin G)
Reference Circuit
Reference circuit input schematic for ƒ = 2170 MHz
Reference circuit output schematic for ƒ = 2170 MHz
PTFB211503EL/FL_OUTPUT
C201
1000000 pF
C202
2200000 pF
TL201
TL202
TL203 TL204 TL205
TL206 TL207
TL208
TL209 TL210 TL211TL212
TL213
TL214
1 2
3
TL215
C203
10000000 pF
TL216
TL217
TL218
1 2
3
TL219
1 2
3
TL220
1 2
3
TL221 TL222
TL223
TL224
12
3
TL225
TL226
12
3
TL227
12
3
TL228
C204
10000000 pF
C205
10000000 pF
C206
1000000 pF
C207
8.2 pF
1 2
3
TL229
C208
0.5 pF
TL230
C209
10000000
C210
2200000 pF
12
3
TL231
b211503efl_bdout_08-19-2010
DUT
(Pin V)
DRAIN DUT
(Pin D)
DUT
(Pin V)
RF_OUT
VDD
VDD
Data Sheet 8 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Description
DUT PTFB211503EL or PTFB211503FL
PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101, TL129 0.095 λ, 54.17 W W = 1.016, L = 8.001 W = 40, L = 315
TL102 0.016 λ, 31.24 W W = 2.286, L = 1.270 W = 90, L = 50
TL103 0.026 λ, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85
TL104 0.032 λ, 47.12 W W = 1.270, L = 2.692 W = 50, L = 106
TL105 0.005 λ, 6.67 W W = 13.970, L = 0.381 W = 550, L = 15
TL106 W1 = 13.970, W2 = 1.016, W3 = 13.970, W1 = 550, W2 = 40, W3 = 550,
W4 = 1.016 W4 = 40
TL107, TL108, TL109 W = 1.016 W = 40
TL110, TL139 0.012 λ, 54.17 W W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 40, W2 = 40, W3 = 40
TL111 (taper) 0.006 λ, 6.67 W / 8.37 W W1 = 13.970, W2 = 10.922, L = 0.483 W1 = 550, W2 = 430, L = 19
TL112 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500
TL113 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90
TL114 0.031 λ, 34.72 W W = 1.981, L = 2.540 W = 78, L = 100
TL115 0.027 λ, 63.89 W W = 0.762, L = 2.286 W = 30, L = 90
TL116 0.096 λ, 63.89 W W = .762, L = 8.136 W = 30, L = 320
TL117 0.029 λ, 54.17 W W = 1.016, L = 2.451 W = 40, L = 97
TL118 0.018 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60
TL119 0.021 λ, 54.17 W W = 1.016, L = 1.727 W = 40, L = 68
TL120 0.026 λ, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85
TL121, TL122 0.002 λ, 54.17 W W = 1.016, L = 0.127 W = 40, L = 5
TL123, TL124 0.030 λ, 54.17 W W = 1.016, L = 2.540 W = 40, L = 100
TL125 0.053 λ, 6.67 W W = 13.970, L = 4.064 W = 550, L = 160
TL126 0.012 λ, 54.17 W W = 1.016, L = 1.021 W = 40, L = 40
TL127 0.134 λ, 47.12 W W = 1.270, L = 11.151 W = 50, L = 439
TL128 0.012 λ, 54.17 W W = 1.016, L = 1.016 W = 40, L = 40
TL130, TL133 0.000 λ, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1
TL131 W1 = 10.922, W2 = 0.025, W3 = 10.922 W1 = 430, W2 = 1, W3 = 430,
W4 = 0.025 W4 = 1
TL132, TL135 0.000 λ, 8.37 W W = 10.922, L = 0.000 W = 430, L = 0
TL134 (taper) 0.033 λ, 8.37 W / 47.12 W W1 = 10.922, W2 = 1.270, L = 2.540 W1 = 430, W2 = 50, L = 100
TL136, TL137 0.012 λ, 63.89 W W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40
TL138 0.012 λ, 54.17 W W1 = 1.016, W2 = 1.270, W3 = 1.016 W1 = 40, W2 = 50, W3 = 40
TL140 0.021 λ, 63.89 W W = 0.762, L = 1.778 W = 30, L = 70
table continued on page 9
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Data Sheet 9 of 14 Rev. 04, 2011-03-07
Reference Circuit (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201 (taper) 0.074 λ, 5.33 W / 39.51 W W1 = 17.780, W2 = 1.651, L = 5.613 W1 = 700, W2 = 65, L = 221
TL202 (taper) 0.010 λ, 4.84 W / 5.33 W W1 = 19.685, W2 = 17.780, L = 0.787 W1 = 775, W2 = 700, L = 31
TL203 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700
TL204 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100
TL205 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100
TL206 0.000 λ, 5.33 W W = 17.780, L = 0.025 W = 700, L = 1
TL207 0.047 λ, 47.12 W W = 1.270, L = 3.886 W = 50, L = 153
TL208 0.021 λ, 39.51 W W = 1.651, L = 1.753 W = 65, L = 69
TL209 0.057 λ, 4.84 W W = 19.685, L = 4.318 W = 775, L = 170
TL210, TL211 0.016 λ, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50
TL212 0.035 λ, 39.51 W W = 1.651, L = 2.896 W = 65, L = 114
TL213 0.032 λ, 16.90 W W = 4.928, L = 2.540 W = 194, L = 100
TL214 0.032 λ, 17.05 W W = 4.877, L = 2.540 W = 192, L = 100
TL215, TL231 0.032 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 2.540 W1 = 120, W2 = 120, W3 = 100
TL216, TL217 0.095 λ, 25.04 W W = 3.048, L = 7.645 W = 120, L = 301
TL218, TL230 W = 3.048 W = 120
TL219, TL225 0.054 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 4.318 W1 = 120, W2 = 120, W3 = 170
TL220, TL221 0.029 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 = 90
TL222, TL224 0.067 λ, 25.04 W W = 3.048, L = 5.359 W = 120, L = 211
TL223, TL226 0.010 λ, 25.04 W W = 3.048, L = 0.762 W = 120, L = 30
TL227, TL228 0.029 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 =90
TL229 0.022 λ, 39.51 W W1 = 1.651, W2 = 1.651, W3 = 1.778 W1 = 65, W2 = 65, W3 = 70
Data Sheet 10 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB211503EF
Find Gerber les for this test xture on the Inneon Web site at http://www.inneon.com/rfpower
Reference circuit assembly diagram (not to scale)
+
+
10 µF
+
10 µF
S3
S1
S2
C102
R804
R803
R802
R801
R805
C801 C802
C803
C101
C103
C104
C105
C106
C107
R101
R104
C201
C205
C202
C208
C209
C210
C203
C206
C204
C207
b211503efl_CD_11-10-2010
PTFB211503_OUT_02
PTFB211503_IN_02
RO4350, .030 (60) RO4350, .030 (60)
RF_IN RF_OUT
VDD
VDD
VDD
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Data Sheet 11 of 14 Rev. 04, 2011-03-07
Reference Circuit (cont.)
Component Information
Component Description Suggested Manufacturer P/N
Input
C101, C102 Chip capacitor, 10 pF ATC ATC100A100FW150XB
C103, C104 Chip capacitor, 4.71 μF Digi-Key 493-2372-2-ND
C105 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB
C106 Chip capacitor, 2.2 pF ATC ATC100B2R2BW500XB
C107 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB
C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND
R101, R104, R803, R805 Resistor, 10 W Digi-Key P10ECT-ND
R801 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R802 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R804 Resistor, 100 W Digi-Key P100ECT-ND
S1 Voltage Regulator Digi-Key LM78L05ACM-LD
S2 Transistor Digi-Key BCP5616TA-ND
S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
Output
C201, C206 Chip capacitor, 1 μF Digi-Key 445-1411-2-ND
C202, C210 Chip capacitor, 2.2 μF Digi-Key 445-1447-2-ND
C203, C209 Capacitor, 10 μF Digi-Key 281M5002106K
C204, C205 Capacitor, 10 μF Digi-Key 587-1818-2-ND
C207 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB
C208 Chip capacitor, 0.5 pF ATC ATC100B0R5BW500XB
Data Sheet 12 of 14 Rev. 04, 2011-03-07
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
+.254
–.127
+. 010
–.005
]
L
C
D
G
S
C
L19.558±.510
[.770±.020]
27.940
[1.100]
2X 12.700
[.500]
45° X 2.032
[45° X .080] 4X 1.143
[.045] (4 PLS)
9.398
[.370]
9.779
[.385]
34.036
[1.340]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039
[
.159
2X 22.860
[.900]
[.200] (2 PLS)
C
L
4.889±.510
[.192±.020]
4X R1.524
[R.060]
2X R1.626
[R.064]
V
E
V
F
4X 30°
H -33288 - 6_ po _02 -18 - 2010
2X 5.080
Package Outline Specications
Package H-33288-6
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
PTFB211503EL
PTFB211503FL
Confidential, Limited Internal Distribution
Data Sheet 13 of 14 Rev. 04, 2011-03-07
L
C
D
G
C
L19.558±.510
[.770±.020]
2X 12.700
[.500]
45° X 2.032
[45° X .080]
2X 1.143
[.045]
9.398
[.370]
9.779
[.385]
23.114
[.910]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039+.254
-.127
[
.159
+.010
-.005
]
22.860
[.900]
2X 5.080
[.200]
4.889±.510
[.192±.020]
V V
S
2X 30°
C 66065-A0003-C743-01-0027 H-34288-4_2 .dwg
L
C
4X R0.508
+.381
-.127
[
R.020+.015
-.005
]
Package Outline Specications (cont.)
Package H-34288-4/2
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specied otherwise.
4. Pins: D = drain; S = source; G = gate; V = VDD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Inneon Internet page
http://www.inneon.com/rfpower
Data Sheet 14 of 14 Rev. 04, 2011-03-07
Edition 2011-03-07
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2010 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB211503EL V1 / PTFB211503FL V2
Condential, Limited Internal Distribution
Revision History: 2011-03-07 Data Sheet
Previous Version: 2010-11-10, Data Sheet
Page Subjects (major changes since last revision)
1 Updated features
2 Corrected typo