PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 - 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 30 V, IDQ = 1.20 A, = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 25 20 IMD Up -45 ACPR -50 15 10 IMD Low Efficiency (%) IMD (dBc) -40 * Broadband internal matching * Enhanced for use in DPD error correction systems * Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = -34 dBc - Adjacent channel power = -37 dBc * Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55% * Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers * Integrated ESD protection * Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power * Pb-Free and RoHS compliant 30 Efficiency -35 PTFB211503FL H-34288-4/2 Features Two-carrier WCDMA 3GPP Drive-up -30 PTFB211503EL H-33288-6 5 -55 -60 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, 1 = 2135 MHz, 2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps -- 18 -- dB Drain Efficiency hD -- 29 -- % Adjacent Channel Power Ratio ACPR -- -36 -- dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurement (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 18 -- dB Drain Efficiency hD 39 40 -- % Intermodulation Distortion IMD -- -30 -28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 A V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.08 -- W Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 150 W CW) RqJC 0.27 C/W Ordering Information Type and Version Package Outline Package Description Shipping PTFB211503EL V1 H-33288-6 Slotted flange, single-ended Tray PTFB211503EL V1 R250 H-33288-6 Slotted flange, single-ended Tape & Reel 250 pcs PTFB211503FL V2 H-34288-4/2 Earless flange, single-ended Tray PTFB211503FL V2 R250 H-34288-4/2 Earless flange, single-ended Tape & Reel 250 pcs Data Sheet 2 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA 3GPP Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84MHz -25 19 2170 Low 2170 Up 2140 Low 2140 Up 2110 Low 2110 Up -40 Gain 18 -45 30 17 20 16 -55 15 31 33 35 37 39 41 43 45 47 49 35 37 39 41 43 45 47 49 Output Power (dBm) Single-carrier WCDMA Drive-Up Single-carrier WCDMA, 3GPP Broadband VDD = 30 V, IDQ = 1.20 A, PO UT = 40 W 35 -30 30 Efficiency -35 25 -40 20 ACP Up -45 15 -50 10 -55 5 ACP Low -60 Gain (dB), Efficiency (%) -25 60 Drain Efficiency (%) 40 0 33 35 37 39 41 43 45 47 0 50 -10 IRL 40 ACP Efficiency 30 -20 Gain -30 20 -40 10 49 -50 2080 Output Power (dBm) Data Sheet 33 Output Power (dBm) -20 31 0 31 VDD = 30 V, IDQ = 1.20 A, = 2170 MHz 3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz ACP (dBc) 10 Efficiency -50 IRL (dB), ACP up (dBc) -35 Gain (dB) Drain Efficiency (%) -30 40 Drain Efficiency (%) VDD = 30 V, IDQ = 1.20 A, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 2100 2120 2140 2160 2180 2200 Frequency (MHz) 3 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up Two-tone Drive-up 20 50 -15 50 19 40 -25 40 30 17 20 Efficiency 16 15 40 42 44 46 48 50 52 IMD (dBc) Gain 18 Efficiency (%) Gain (dB) VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz Efficiency -35 -45 10 -55 0 -65 54 20 IMD3 42 44 IRL -15 45 -20 -25 Efficiency 35 -30 -35 IMD3 -40 Gain -45 15 2090 2110 2130 2150 2170 2190 2140MHz -30 2110MHz -40 -50 -60 -70 2210 41 43 45 47 49 51 53 Output Power, PEP (dBm) Frequency (MHz) Data Sheet 54 2170MHz -50 2070 52 -20 IMD (dBc) -10 Return Loss (dB), IMD (dBc) Gain (dB), Efficiency (%) -5 55 20 50 VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz 60 25 48 Two-tone Drive-up at Selected Frequencies VDD = 30 V, IDQ = 1.20 A, PO UT = 63 W 30 46 Output Power, PEP (dBm) Two-tone Broadband Performance 40 10 0 40 Output Power, PEP (dBm) 50 30 Efficiency (%) VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz 4 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Typical Performance (cont.) Power Sweep, CW Gain & Efficiency vs. Output Power CW Performance Gain vs. Output Power IDQ = 1.40 A 17 IDQ = 1.20 A Gain (dB) Power Gain (dB) 18 IDQ = 0.80 A 19 60 18 50 17 40 Gain 16 30 16 15 15 Efficiency +25C +85C -10C 20 14 41 43 45 47 49 51 53 10 42 Output Power (dBm) Drain Efficiency (%) VDD = 30 V, IDQ = 1.20 A, = 2170 MHz VDD = 30 V, = 2170 MHz 44 46 48 50 52 Output Power (dBm) Intermodulation Distortion vs. Output Power VDD = 30 V, IDQ = 1.20 A, 1 = 2170 MHz, 2 = 2169 MHz -20 3rd Order IMD (dBc) -30 5th -40 7th -50 -60 -70 40 45 50 55 Output Power, PEP (dBm) Data Sheet 5 of 14 Rev. 04, 2011-03-07 3 RA T OR ---> S 0.2 0.1 G 0.0 Z Load D LOA D S T OW AR NGT H D Z0 = 50 0.1 - W AV E LE NGT H S T OW A RD G E NE 0. 2 Broadband Circuit Impedance 0. Confidential, Limited Internal Distribution Z Source PTFB211503EL PTFB211503FL Z Load MHz R jX R jX 2200 2.06 -6.08 2.19 -4.73 2170 2.17 -6.33 2.19 -4.82 2140 2.30 -6.59 2.20 -4.91 2110 2.43 -6.86 2.21 -5.00 2080 2.58 -7.14 2.22 -5.09 Z Source 0. 1 2200 MHz V EL E Z Load W 2080 MHz WA <--- Z Source W Frequency 0. 2 See next page for reference circuit information 0. 4 0. 5 0. 45 0. 05 0. 3 Data Sheet 6 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL PTFB211503EL/FL_INPUT Confidential, Limited Internal Distribution Reference Circuit C801 1000 pF S1 8 C802 1000 pF C803 1000 pF 4 R801 1200 Ohm 2 Out NC NC 2 3 6 C S B 3 1 7 5 S2 4 1 R802 1300 Ohm In R804 100 Ohm E R805 10 Ohm S3 TL114 3 TL118 R803 10 Ohm TL138 R101 10 Ohm TL128 2 TL110 TL124 1 3 TL119 RF_IN TL121 C106 2.2 pF TL115 TL104 C101 10 pF TL120 TL130 TL127 TL134 TL135 TL113 TL102 TL131 TL111 TL105 TL132 2 3 1 C107 8.2 pF TL137 TL129 TL109 2 3 1 TL106 C103 4710000 pF 2 TL125 2 TL112 3 1 4 4 GATE DUT (Pin G) TL133 PTFB211503EL/FL_OUTPUT 3 C105 0.6 pF 1 TL116 TL136 C104 4710000 pF 2 C102 10 pF 3 1 TL140 TL103 TL122 TL117 R104 10 Ohm TL126 TL107 TL123 TL139 TL101 3 2 1 TL108 b 2 1 1 5 0 3 e f l _ b d i n _ 0 8 - 1 9 - 2 0 1 0 Reference circuit input schematic for = 2170 MHz C204 10000000 pF TL218 TL214 TL223 TL220 TL221 1 2 1 3 C202 2200000 pF DUT (Pin V) DRAIN DUT (Pin D) TL203 TL209 TL202 TL215 2 1 TL217 3 2 1 VDD C203 10000000 pF TL212 TL201 2 3 C201 1000000 pF TL206 TL222 TL219 3 TL229 1 TL208 TL204 TL210 C207 8.2 pF TL211 TL205 TL207 RF_OUT 2 3 C208 0.5 pF C210 2200000 pF DUT (Pin V) TL213 TL226 C209 10000000 C206 1000000 pF TL228 2 TL227 3 1 2 TL231 3 1 2 TL230 1 TL216 TL225 b 2 1 1 5 0 3 e f l _ b d o u t _ 0 8 - 1 9 - 2 0 1 0 TL224 3 2 1 3 C205 10000000 pF VDD Reference circuit output schematic for = 2170 MHz Data Sheet 7 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFB211503EL or PTFB211503FL PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101, TL129 0.095 , 54.17 W = 1.016, L = 8.001 W = 40, L = 315 TL102 0.016 , 31.24 W = 2.286, L = 1.270 W = 90, L = 50 TL103 0.026 , 54.17 W = 1.016, L = 2.159 W = 40, L = 85 TL104 0.032 , 47.12 W = 1.270, L = 2.692 W = 50, L = 106 TL105 0.005 , 6.67 W = 13.970, L = 0.381 W = 550, L = 15 TL106 W1 = 13.970, W2 = 1.016, W3 = 13.970, W4 = 1.016 W1 = 550, W2 = 40, W3 = 550, W4 = 40 TL107, TL108, TL109 W = 1.016 W = 40 TL110, TL139 0.012 , 54.17 W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 40, W2 = 40, W3 = 40 TL111 (taper) 0.006 , 6.67 / 8.37 W1 = 13.970, W2 = 10.922, L = 0.483 W1 = 550, W2 = 430, L = 19 TL112 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 TL113 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90 TL114 0.031 , 34.72 W = 1.981, L = 2.540 W = 78, L = 100 TL115 0.027 , 63.89 W = 0.762, L = 2.286 W = 30, L = 90 TL116 0.096 , 63.89 W = .762, L = 8.136 W = 30, L = 320 TL117 0.029 , 54.17 W = 1.016, L = 2.451 W = 40, L = 97 TL118 0.018 , 54.17 W = 1.016, L = 1.524 W = 40, L = 60 TL119 0.021 , 54.17 W = 1.016, L = 1.727 W = 40, L = 68 TL120 0.026 , 54.17 W = 1.016, L = 2.159 W = 40, L = 85 TL121, TL122 0.002 , 54.17 W = 1.016, L = 0.127 W = 40, L = 5 TL123, TL124 0.030 , 54.17 W = 1.016, L = 2.540 W = 40, L = 100 TL125 0.053 , 6.67 W = 13.970, L = 4.064 W = 550, L = 160 TL126 0.012 , 54.17 W = 1.016, L = 1.021 W = 40, L = 40 TL127 0.134 , 47.12 W = 1.270, L = 11.151 W = 50, L = 439 TL128 0.012 , 54.17 W = 1.016, L = 1.016 W = 40, L = 40 TL130, TL133 0.000 , 144.35 W = 0.025, L = 0.025 W = 1, L = 1 W1 = 10.922, W2 = 0.025, W3 = 10.922 W4 = 0.025 W1 = 430, W2 = 1, W3 = 430, W4 = 1 TL131 TL132, TL135 0.000 , 8.37 W = 10.922, L = 0.000 W = 430, L = 0 TL134 (taper) 0.033 , 8.37 / 47.12 W1 = 10.922, W2 = 1.270, L = 2.540 W1 = 430, W2 = 50, L = 100 TL136, TL137 0.012 , 63.89 W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40 TL138 0.012 , 54.17 W1 = 1.016, W2 = 1.270, W3 = 1.016 W1 = 40, W2 = 50, W3 = 40 TL140 0.021 , 63.89 W = 0.762, L = 1.778 W = 30, L = 70 table continued on page 9 Data Sheet 8 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Output TL201 (taper) 0.074 , 5.33 / 39.51 W1 = 17.780, W2 = 1.651, L = 5.613 W1 = 700, W2 = 65, L = 221 TL202 (taper) 0.010 , 4.84 / 5.33 W1 = 19.685, W2 = 17.780, L = 0.787 W1 = 775, W2 = 700, L = 31 TL203 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL204 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100 TL205 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100 TL206 0.000 , 5.33 W = 17.780, L = 0.025 W = 700, L = 1 TL207 0.047 , 47.12 W = 1.270, L = 3.886 W = 50, L = 153 TL208 0.021 , 39.51 W = 1.651, L = 1.753 W = 65, L = 69 TL209 0.057 , 4.84 W = 19.685, L = 4.318 W = 775, L = 170 TL210, TL211 0.016 , 28.85 W = 2.540, L = 1.270 W = 100, L = 50 TL212 0.035 , 39.51 W = 1.651, L = 2.896 W = 65, L = 114 TL213 0.032 , 16.90 W = 4.928, L = 2.540 W = 194, L = 100 TL214 0.032 , 17.05 W = 4.877, L = 2.540 W = 192, L = 100 TL215, TL231 0.032 , 25.04 W1 = 3.048, W2 = 3.048, W3 = 2.540 W1 = 120, W2 = 120, W3 = 100 TL216, TL217 0.095 , 25.04 W = 3.048, L = 7.645 W = 120, L = 301 W = 3.048 W = 120 TL218, TL230 TL219, TL225 0.054 , 25.04 W1 = 3.048, W2 = 3.048, W3 = 4.318 W1 = 120, W2 = 120, W3 = 170 TL220, TL221 0.029 , 25.04 W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 = 90 TL222, TL224 0.067 , 25.04 W = 3.048, L = 5.359 W = 120, L = 211 TL223, TL226 0.010 , 25.04 W = 3.048, L = 0.762 W = 120, L = 30 TL227, TL228 0.029 , 25.04 W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 =90 TL229 0.022 , 39.51 W1 = 1.651, W2 = 1.651, W3 = 1.778 W1 = 65, W2 = 65, W3 = 70 Data Sheet 9 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB211503EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower RO4350, .030 (60) RO4350, .030 VDD R804 C801 C802 (60) C204 R801 S3 VDD C803 R802 + C201 R805 + S2 10 F C202 S1 R803 R101 C101 C203 C106 C103 RF_IN C107 RF_OUT C207 C208 C104 C102 C105 R104 C209 C210 + 10 F C206 VDD C205 PTFB211503_OUT_02 PTFB211503_IN_02 b 2 1 1 5 0 3 e f l _ C D _ 1 1 - 1 0 - 2 0 1 0 Reference circuit assembly diagram (not to scale) Data Sheet 10 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Information Component Description Suggested Manufacturer P/N C101, C102 Chip capacitor, 10 pF ATC ATC100A100FW150XB C103, C104 Chip capacitor, 4.71 F Digi-Key 493-2372-2-ND C105 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB C106 Chip capacitor, 2.2 pF ATC ATC100B2R2BW500XB C107 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND R101, R104, R803, R805 Resistor, 10 W Digi-Key P10ECT-ND R801 Resistor, 1200 W Digi-Key P1.2KGCT-ND R802 Resistor, 1300 W Digi-Key P1.3KGCT-ND R804 Resistor, 100 W Digi-Key P100ECT-ND S1 Voltage Regulator Digi-Key LM78L05ACM-LD S2 Transistor Digi-Key BCP5616TA-ND S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND C201, C206 Chip capacitor, 1 F Digi-Key 445-1411-2-ND C202, C210 Chip capacitor, 2.2 F Digi-Key 445-1447-2-ND C203, C209 Capacitor, 10 F Digi-Key 281M5002106K C204, C205 Capacitor, 10 F Digi-Key 587-1818-2-ND C207 Chip capacitor, 8.2 pF ATC ATC100B8R2BW500XB C208 Chip capacitor, 0.5 pF ATC ATC100B0R5BW500XB Input Output Data Sheet 11 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 45 X 2.032 [45 X .080] 4X 30 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) V D 4.889.510 [.192.020] V S CL 2X R1.626 [R.064] G E 9.398 [.370] 9.779 [.385] 19.558.510 [.770.020] F H -33288 - 6_ po _02 -18 - 2010 CL 2X 12.700 [.500] 2X 22.860 [.900] 27.940 [1.100] 22.352.200 [.880.008] 1.575 [.062] (SPH) 1.016 [.040] 4.039 +.254 -. 127 010 [.159 +. -. 005 ] CL 34.036 [1.340] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: A = gate, B = source, C = drain, D = VDD, E, F = N.C. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Data Sheet 12 of 14 Rev. 04, 2011-03-07 PTFB211503EL PTFB211503FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-4/2 22.860 [.900] 45 X 2.032 [45 X .080] 2X 5.080 [.200] 2X 1.143 [.045] C L 2X 30 V D V 9.779 [.385] 9.398 [.370] C L 4X R0.508+.381 -.127 R.020+.015 -.005 19.558.510 [.770.020] G ] [ 4.889.510 [.192.020] 2X 12.700 [.500] 4.039+.254 -.127 .159+.010 -.005 22.352.200 [.880.008] [ ] C 66065-A0003- C743- 01-0027 H- 34288- 4_ 2 .dwg 1.575 [.062] (SPH) C L 1.016 [.040] 23.114 [.910] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 13 of 14 Rev. 04, 2011-03-07 PTFB211503EL V1 / PTFB211503FL V2 Confidential, Limited Internal Distribution Revision History: 2011-03-07 Previous Version: 2010-11-10, Data Sheet Page Subjects (major changes since last revision) 1 Updated features 2 Corrected typo Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2011-03-07 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 of 14 Rev. 04, 2011-03-07