
PDE-N1200D25B-0
IGBT M ODUL E
MBN1200D25B
Silicon N-channel IGBT OUTLINE DRAWING
FEATURES
* High thermal fatigue dur ability.
(delta Tc=70°C,N>20,000cycles)
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery diode(USFD).
*High speed,low loss IGBT module.
*Low driving pow er due t o low input
capacitance MOS gate.
*High reliability,high durabilit y module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item Symbol Unit MBN1200D25B
Collector Emitter Voltage VCES V 2,500
Gate Emitter Voltage VGES V±20
Collector Current DC IC1,200
1ms ICp A2,400
Forward Current DC IF 1,200
1ms IFM A2,400
Collector Power Dissipation Pc W 12,000
Junction Temperature Tj°C -40 ~ +125
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage VISO VRMS 5,000(AC 1 minute)
Screw Torque Terminals(M4/M8) - 2/10 (1)
Mounting(M6) -N.m 6 (2)
Notes: (1)Recommended Value 1.8±0.2/9±1N.m (2)Recommended Value 5.5±0.5N.m
CHARACTERISTICS (Tc=25°C )
Item S
mbol Unit Min. T
p. Max. Test Conditions
Collector Emitter Cut-Off Current I CES mA - - 12.0 VCE=2,500V,VGE=0V
Gate Emitter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V
Collector Emitter Saturation Voltage VCE
sat
V-2.93.7I
C=1,200A,VGE=15V
Gate Emitter Threshold Voltage VGE
TO
V 4.0 5.5 7.0 VCE=10V, IC =1,200mA
Input Capacitance Cies nF - 170 - VCE=10V,VGE=0V,f=100KHz
Rise Time tr-1.72.7V
CC=1,250V,Ic=1,200A
Turn On Time ton - 2.7 4.2 L=100nH
Fall Time tf- 2.43.2R
G=3.3W (3)
Switching Times
Turn Off Time toff
ms
-4.46.4V
GE=±15V Tc=125°C
Peak Forward Voltage Drop VFM V-2.02.9
-Ic=1,200A,VGE=0V
Reverse Recovery Time trr ms - 0.8 1.4 Vcc=1,250V,-Ic=1,200A,L=100nH,
Tc=125°C (4)
IGBT Rth
-c
- - 0.008
Thermal Impedance FWD Rth
-c
°C/W - - 0.016 Junction to case
Notes:(3) RG value is the test condition’s value for decision of the switching times, not recommended value.
Determine the suitable R
G value after the measurement of switching waveforms
(overshoot voltage,etc.)with appliance mounted.
(4) Counter arm IGBT VGE=-15V
Unit in mm
Weight: 1,200 (g) TERMINALS
G
EEEE
CCCC
6-M8
3-M4
8-φ7