CO M PL IA NT TISP3070H3SLL, TISP3250H3SLL, TISP3290H3SLL *R oH S DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxH3SLL Overvoltage Protector Series ITU-T K.20/21 Rating ..........................8 kV 10/700, 200 A 5/310 3-SIP (Long Lead) Package (Top View) Low Differential Capacitance .........................................< 67 pF 3-Pin Through-Hole Packaging - Compatible with TO-220AB pin-out Ion-Implanted Breakdown Region - Precise and Stable Voltage T 1 G 2 R 3 MDXXAZA Low Voltage Overshoot Under Surge Device Name VDRM V(BO) V V TISP3070H3SLL 58 70 TISP3250H3SLL 190 250 TISP3290H3SLL 220 290 Device Symbol R T Rated for International Surge Wave Shapes - Single and Simultaneous Impulses IPPSM Wave Shape Standard 2/10 GR-1089-CORE 500 8/20 IEC 61000-4-5 300 10/160 TIA-968-A 250 10/700 TIA-968-A ITU-T K.20/21 A SD3XAAa G 200 ..................................................UL Recognized Component 10/560 TIA-968-A 160 10/1000 GR-1089-CORE 100 Description The TISP3xxxH3SLL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. The TISP3xxxH3SLL range is designed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin long-lead single-in-line (SLL) plastic package and are supplied in tube pack. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. How to Order Device Package Carrier TISP3xxxH3SLL 3-SIP (Long Lead) Tube Order As TISP3xxxH3SLL-S *RoHS Directive 2002/95/EC Jan 27 2003 including Annex JANUARY 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Marking Code Tube Qty. SP3xxxH3 50 Std. Qty. 1000 TISP3xxxH3SLL Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating Symbol Value Unit VDRM 58 190 220 V IPPSM 500 300 250 220 200 200 200 200 160 100 A ITSM 55 60 1 A diT/dt 400 A/s TJ -40 to +150 C Tstg -65 to +150 C '3070 '3250 '3290 Repetitive peak off-state voltage Non-repetitive peak impulse current (see Notes 1, 2 and 3) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage wave shape, 8/20 s current combination wave generator) 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage waveshape) 0.2/310 s (I 31-24, 0.5/700 s voltage waveshape) 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage waveshape) 5/320 s (TIA-968-A, 9/720 s voltage wave shape) 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 1, 2 and 4) 20 ms, 50 Hz (full sine wave) 16.7 ms 60 Hz (full sine wave) 1000 s, 50 Hz a.c. Initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 A Junction temperature Storage temperature range NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 C. 2. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the device returns to its initial conditions. 3. Above 85 C, derate linearly to zero at 150 C lead temperature. 4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61%/C for ambient tempeartures above 25 C. Electrical Characteristics for the R and G or T and G Terminals, TA = 25 C (Unless Otherwise Noted) Parameter IDRM Repetitive peak off-state current V(BO) Breakover voltage Test Conditions Min Typ Max 5 10 A dv/dt = 750 V/ms, RSOURCE = 300 '3070 '3250 '3290 70 250 290 V dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A '3070 '3250 '3290 78 261 302 V 600 mA VD = VDRM V(BO) Impulse breakover voltage I(BO) Breakover current dv/dt = 750 V/ms, RSOURCE = 300 VT On-state voltage IT = 5 A, tw = 100 s IH Holding current IT = 5 A, di/dt = 30 mA/ms 150 150 dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM ID Off-state current Unit TA = 25 C TA = 85 C VD = 50 V 3 V 600 mA kV/s 5 TA = 85 C 10 A JANUARY 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxH3SLL Overvoltage Protector Series Electrical Characteristics for the R and G or T and G Terminals, TA = 25 C (Unless Otherwise Noted) (Continued) Parameter Test Conditions f = 100 kHz, Vd = 1 V rms, VD = 0 V f = 100 kHz, Vd = 1 V rms, VD = -1 V CO Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V f = 100 kHz, Vd = 1 V rms, VD = -50 V f = 100 kHz, Vd = 1 V rms, VD = -100 V Min Typ Max Unit 170 84 150 67 140 62 73 28 26 pF Min Typ Max Unit '3070 '3250 & '3290 '3070 '3250 & '3290 '3070 '3250 & '3290 '3070 '3250 & '3290 '3250 & '3290 Electrical Characteristics for the R and T Terminals, TA = 25 C (Unless Otherwise Noted) Parameter IDRM V(BO) V(BO) Repetitive peak off-state current Breakover voltage Impulse breakover voltage Test Conditions VD = 2VDRM 5 A dv/dt = 750 V/ms, RSOURCE = 300 '3070 '3250 '3290 140 500 580 V dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A '3070 '3250 '3290 156 522 604 V Thermal Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter RJA NOTE: Junction to ambient thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 5) Min Typ Max Unit 50 C/W 5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. JANUARY 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP3xxxH3SLL Overvoltage Protector Series Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT V(BO) VT I(BO) IH V (BR)M V DRM -v I(BR) V (BR) I(BR) IDRM VD ID ID VD IDRM +v V DRM V (BR)M V (BR) IH I(BO) V(BO) VT IT ITRM ITSM Quadrant III Switching Characteristic I PPSM -i PM-TISP4xxx-001-a Figure 1. Voltage-Current Characteristic for Terminal Pairs JANUARY 2005 - REVISED MAY 2007 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 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