TISP3070H3SLL-S - Bourns, Inc.

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

JANUARY 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxH3SLL Overvoltage Protector Series

TISP3070H3SLL, TISP3250H3SLL, TISP3290H3SLL

DUAL BIDIRECTIONAL

THYRISTOR OVERVOLTAGE PROTECTORS

3-SIP (Long Lead) Package (Top View)

*RoHS COMPLIANT

ITU-T K.20/21 Rating..........................8 kV 10/700, 200 A 5/310

Low Differential Capacitance .........................................< 67 pF

3-Pin Through-Hole Packaging

- Compatible with TO-220AB pin-out

Ion-Implanted Breakdown Region

- Precise and Stable Voltage

Low Voltage Overshoot Under Surge

Rated for International Surge Wave Shapes

- Single and Simultaneous Impulses

Device Name VDRM

V(BO)

TISP3070H3SLL 58 70

TISP3250H3SLL 190 250

TISP3290H3SLL 220 290

Wave Shape Standard IPPSM

2/10 GR-1089-CORE 500

8/20 IEC 61000-4-5 300

10/160 TIA-968-A 250

10/700 TIA-968-A

ITU-T K.20/21 200

10/560 TIA-968-A 160

10/1000 GR-1089-CORE 100

MDXXAZ

Device Symbol

SD3XAAa

Description

The TISP3xxxH3SLL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused

by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line.

The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping

until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes

the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as

the diverted current subsides.

The TISP3xxxH3SLL range is designed to voltage limit and withstand the listed international lightning surges in both polarities. These high

current protection devices are in a 3-pin long-lead single-in-line (SLL) plastic package and are supplied in tube pack. These monolithic

protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually

transparent to the system in normal operation.

How to Order

Device Package Carrier Marking Code Tube Qty.

TISP3xxxH3SLL 3-SIP (Long Lead) Tube TISP3xxxH3SLL-S SP3xxxH3 50

Std. Qty.

1000

Order As

..................................................UL Recognized Component

JANUARY 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxH3SLL Overvoltage Protector Series

Absolute Maximum Ratings, TA= 25 °C (Unless Otherwise Noted)

Rating Symbol Value Unit

Repetitive peak off-state voltage

'3070

'3250

'3290

VDRM

±58

±190

±220

Non-repetitive peak impulse current (see Notes 1, 2 and 3)

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)

8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage wave shape, 8/20 µs current combination wave generator)

10/160 µs (TIA-968-A, 10/160 µs voltage wave shape)

5/200 µs (VDE 0433, 10/700 µs voltage waveshape)

0.2/310 µs (I 31-24, 0.5/700 µs voltage waveshape)

5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape)

5/310 µs (FTZ R12, 10/700 µs voltage waveshape)

5/320 µs (TIA-968-A, 9/720 µs voltage wave shape)

10/560 µs (TIA-968-A, 10/560 µs voltage wave shape)

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)

IPPSM

±500

±300

±250

±220

±200

±160

±100

Non-repetitive peak on-state current (see Notes 1, 2 and 4)

ITSM

20 ms, 50 Hz (full sine wave)

16.7 ms 60 Hz (full sine wave)

1000 s, 50 Hz a.c.

Initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 A diT/dt 400 A/µs

Junction temperature TJ-40 to +150 °C

Storage temperature range Tstg -65 to +150 °C

NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C.

2. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to the R or T

terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G

terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the

device returns to its initial conditions.

3. Above 85 °C, derate linearly to zero at 150 °C lead temperature.

4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. Derate current values at -0.61%/°C for ambient tempeartures above 25 °C.

Parameter Test Conditions Min Typ Max Unit

IDRM Repetitive peak off-state current VD = VDRM TA = 25 °C

TA = 85 °C

±5

±10 µA

V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω

'3070

'3250

'3290

±70

±250

±290

V(BO) Impulse breakover voltage

dv/dt ≤ ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

'3070

'3250

'3290

±78

±261

±302

I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE = 300 Ω±150 ±600 mA

VTOn-state voltage IT=±5A, t

w= 100 µs±3V

IHHolding current IT=±5 A, di/dt = ±30 mA/ms ±150 ±600 mA

dv/dt Critical rate of rise of off-state voltage Linear voltage ramp, maximum ramp value < 0.85VDRM ±5 kV/µs

IDOff-state current VD = ±50 V TA = 85 °C±10 µA

Electrical Characteristics for the R and G or T and G Terminals, TA= 25 °C (Unless Otherwise Noted)

JANUARY 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxH3SLL Overvoltage Protector Series

Electrical Characteristics for the R and G or T and G Terminals, TA= 25 °C (Unless Otherwise Noted) (Continued)

COOff-state capacitance

f = 100 kHz, Vd = 1 V rms, VD = 0 V

f = 100 kHz, Vd = 1 V rms, VD = -1 V

f = 100 kHz, Vd = 1 V rms, VD = -2 V

f = 100 kHz, Vd = 1 V rms, VD = -50 V

f = 100 kHz, Vd = 1 V rms, VD = -100 V

'3070

'3250 & '3290

'3070

'3250 & '3290

'3070

'3250 & '3290

'3070

'3250 & '3290

170

150

140

Parameter Test Conditions Min Typ Max Unit

Electrical Characteristics for the R and T Terminals, TA= 25 °C (Unless Otherwise Noted)

Parameter Test Conditions Min Typ Max Unit

IDRM Repetitive peak off-state current VD = 2VDRM ±5µA

V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE = 300 Ω

'3070

'3250

'3290

±140

±500

±580

V(BO) Impulse breakover voltage

dv/dt ≤ ±1000 V/µs, Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A/µs, Linear current ramp,

Maximum ramp value = ±10 A

'3070

'3250

'3290

±156

±522

±604

Thermal Characteristics, TA= 25 °C (Unless Otherwise Noted)

Parameter Test Conditions Min Typ Max Unit

RθJA Junction to ambient thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000)

(see Note 5) 50 °C/W

NOTE: 5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

JANUARY 2005 - REVISED MAY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxH3SLL Overvoltage Protector Series

Parameter Measurement Information

-v

I(BR)

V(BR)

V(BR)M

VDRM

IDRM

ITRM

IPPSM

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

I(BR)

V(BR)

V(BR)M

VDRM

IDRM

ITRM

IPPSM

-i

Quadrant III

Switching

Characteristic

ITSM

Figure 1. Voltage-Current Characteristic for Terminal Pairs

PM-TISP4xxx-001-a

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Technical Assistance

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