2007-02-08
Page 1
Rev. 2.01 BSL207SP
OptiMOS
-P Small-Signal-Transistor Product Summary
VDS -20 V
RDS
(
on
)
41 mΩ
ID-6 A
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
P-TSOP6-6
5
6
4
1
3
2
Gate
pin 3
Drain
pin 1,2,
Source
pin 4
5,6
Marking
sPA
Type Package Tape and reel
BSL207SP P-TSOP6-6 L6327:3000 pcs/r.
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-6
-4.8
A
Pulsed drain current
T
A
=25°C
I
D puls
-24
Avalanche energy, single pulse
I
D
=-6 A , V
DD
=-10V, R
GS
=25Ω
E
AS
44 mJ
Reverse diode dv/dt
I
S
=-6A, V
DS
=-16V, di/dt=200A/µs, T
jmax
=150°C
dv/dt-6 kV/µs
Gate source voltage V
GS
±12 V
Power dissipation
T
A
=25°C
P
tot
2W
Operating and storage temperature T
j
,
T
st
g
-55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
• Pb-free lead plating; RoHS compliant
P-TSOP6-6
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2007-02-08
Page 2
Rev. 2.01 BSL207SP
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 50 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
230
62.5
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -20 - - V
Gate threshold voltage, VGS = VDS
ID=-40µA
VGS(th) -0.6 -0.9 -1.2
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-12V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-2.5V, ID=-4.9A
RDS(on) - 43 65 mΩ
Drain-source on-state resistance
VGS=-4.5, ID=-6A
RDS(on) - 29 41
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤ 5 sec.
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2007-02-08
Page 3
Rev. 2.01 BSL207SP
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2∗ID∗RDS(on)max,
ID=-4.8A
7 14 - S
Input capacitance Ciss VGS=0, VDS=-15V,
f=1MHz
- 1007 - pF
Output capacitance Coss - 410 -
Reverse transfer capacitance Crss - 332 -
Turn-on delay time td
(
on
)
VDD=-10V, VGS=-4.5V,
ID=-1A, RG=6Ω
- 9 14 ns
Rise time tr- 17 26
Turn-off delay time td
(
off
)
- 42 63
Fall time tf- 53 76
Gate Charge Characteristics
Gate to source charge Q
g
sVDD=-10V, ID=-6A - -1.7 -2.6 nC
Gate to drain charge Q
d- -7.1 -10.7
Gate charge total QgVDD=-10V, ID=-6A,
VGS=0 to -4.5V
- -13.3 -20
Gate plateau voltage V
(p
lateau
)
VDD=-10V, ID=-6A - -1.6 - V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - -2.3 A
Inverse diode direct current,
pulsed ISM - - -24
Inverse diode forward voltage VSD VGS=0, |IF| = |ID|- -0.9 -1.3 V
Reverse recovery time trr VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
- 29 36 ns
Reverse recovery charge Qrr - 12 15 nC
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2007-02-08
Page 4
Rev. 2.01 BSL207SP
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
W
2.2 BSL207SP
Ptot
2 Drain current
ID = f (TA)
parameter: |VGS|≥ 4.5 V
0 20 40 60 80 100 120 °C 160
TA
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
-5.5
A
-6.5 BSL207SP
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 -1 -10 0 -10 1 -10 2
VVDS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSL207SP
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 130.0µs
4 Transient thermal impedance
ZthJS = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W BSL207SP
ZthJS
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
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2007-02-08
Page 5
Rev. 2.01 BSL207SP
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
012345678V10
- VDS
0
5
10
15
20
25
30
35
40
45
50
A
60
- ID
Vgs = -2V
Vgs = -2.5V
Vgs = -3V
Vgs = -3.5V
Vgs = -4V
Vgs = -4.5V
Vgs = -6V
Vgs = -10V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 4 8 12 16 20 24 A30
- ID
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0.045
0.05
0.055
Ω
0.065
RDS(on)
Vgs = - 10V
Vgs = -2V
Vgs = -2.2V
Vgs = -2.5V
Vgs= - 3V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 6V
Vgs= - 8V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: tp = 80 µs
0 0.5 1 1.5 2 V3
- VGS
0
2
4
6
8
10
12
14
16
18
A
22
- ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
0 4 8 12 16 A24
- ID
0
4
8
12
S
20
gfs
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2007-02-08
Page 6
Rev. 2.01 BSL207SP
9 Drain-source on-resistance
RDS(on) = f(Tj)
parameter: ID = -6 A, VGS = -4.5 V
-60 -20 20 60 100 °C 160
Tj
20
25
30
35
40
45
mΩ
55
RDS(on)
typ.
98%
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = -40 µA
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
V
1.4
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 V20
- VDS
2
10
3
10
4
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-1
-10
0
-10
1
-10
2
-10
A
BSL207SP
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
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2007-02-08
Page 7
Rev. 2.01 BSL207SP
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -6 A
VDD = -10 V, RGS = 25 Ω
25 50 75 100 °C 150
Tj
0
5
10
15
20
25
30
35
mJ
45
EAS
14 Typ. gate charge
|VGS| = f (QGate)
parameter: ID = -6 A pulsed
0 4 8 12 16 20 nC 28
|QGate|
0
1
2
3
4
5
6
7
8
9
10
V
12
- VGS
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5 BSL207SP
V(BR)DSS
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2007-02-08
Page 8
Rev. 2.01 BSL207SP
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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