NTF3055L175T3 - ON Semiconductor

Publication Order Number:

NTF3055L175/D

 Semiconductor Components Industries, LLC, 2004

February, 2004 − Rev. 2 1

NTF3055L175

Preferred Device

Power MOSFET

2.0 A, 60 V, Logic Level

N−Channel SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

•Pb−Free Packages are Available

Applications

•Power Supplies

•Converters

•Power Motor Controls

•Bridge Circuits

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage VDSS 60 Vdc

Drain−to−Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms) VGS ±15

±20 Vdc

Vpk

Drain Current

− Continuous @ TA = 25°C

− Continuous @ TA = 100°C

− Single Pulse (tp ≤ 10 s)

IDM

2.0

1.2

6.0

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1)

Total Power Dissipation @ TA = 25°C (Note 2)

Derate above 25°C

PD2.1

1.3

0.014

W/°C

Operating and Storage Temperature Range TJ, Tstg −55

to 175 °C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc,

IL(pk) = 3.6 A, L = 10 mH, VDS = 60 Vdc)

EAS 65 mJ

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2) RJA

RJA 72.3

114

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds TL260 °C

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area

0.995 in2).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 in2).

123

2.0 A, 60 V

RDS(on) = 175 m

N−Channel

SOT−223

CASE 318E

STYLE 3

LWW

MARKING DIAGRAM

5L175

5L175 = Device Code

L = Location Code

WW = Work Week

PIN ASSIGNMENT

321

Gate Drain Source

Drain

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

Preferred devices are recommended choices for future

use and best overall value.

NTF3055L175

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 Adc)

Temperature Coefficient (Positive)

V(BR)DSS 60

−72.8

74.4 −

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS −

−−

−1.0

Adc

Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 Adc)

Threshold Temperature Coefficient (Negative)

VGS(th) 1.0

−1.7

4.2 2.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 1.0 Adc) RDS(on) − 155 175 m

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 5.0 Vdc, ID = 2.0 Adc)

(VGS = 5.0 Vdc, ID = 1.0 Adc, TJ = 150°C)

VDS(on) − 0.32

0.57 0.42

−

Vdc

Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 1.5 Adc) gfs − 3.2 − Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V 25 Vd V 0V

Ciss − 194 270 pF

Output Capacitance (VDS = 25 Vdc, VGS = 0 V,

f = 1.0 MHz

)

Coss − 70 100

Transfer Capacitance

MHz)

Crss − 29 40

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(on) − 10.2 20 ns

Rise Time (VDD = 30 Vdc, ID = 2.0 Adc,

VGS =50Vdc

tr− 21 40

Turn−Off Delay Time VGS = 5.0 Vdc,

RG = 9.1 ) (Note 3) td(off) − 14.3 30

Fall Time

9.1

)

(Note

tf− 15.3 30

Gate Charge

(V 48 Vd I 20Ad

QT− 5.1 10 nC

(VDS = 48 Vdc, ID = 2.0 Adc,

= 5.0 Vdc

)

(

Note 3

)

Q1− 1.4 −

VGS

Vdc)

(Note

Q2− 2.5 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (IS = 2.0 Adc, VGS = 0 Vdc)

(IS = 2.0 Adc, VGS = 0 Vdc,

TJ = 150°C) (Note 3)

VSD −

−0.84

0.68 1.0

−

Vdc

Reverse Recovery Time trr − 28.3 − ns

(IS = 2.0 Adc, VGS = 0 Vdc, ta− 15.6 −

(IS

Adc

VGS

Vdc

dIS/dt = 100 A/s) (Note 3) tb− 12.7 −

Reverse Recovery Stored Charge QRR − 0.027 − C

3. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2.0%.

4. Switching characteristics are independent of operating junction temperatures.

NTF3055L175

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0 0.5 2 3.52.51.51340 0.5 2 3.52.51.5134

0.8

2.8

3.2

0.4

1.2

1.6

2.4

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus

Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current

and Gate Voltage

Figure 5. On−Resistance Variation with

Temperature Figure 6. Drain−to−Source Leakage Current

versus Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

TJ = 25°C

TJ = 100°C

TJ = −55°C

0.28

0.24

0.2

0.16

0.12

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE ()

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE ()

VGS = 10 V

1.8

1.6

1.4

TJ, JUNCTION TEMPERATURE (°C)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

−50 50250−25 75 125100

ID = 1 A

VGS = 5 V

0.8

0.6 150 1

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

IDSS, LEAKAGE (nA)

04060302010 50

100

0.8

2.0

2.81.60.8

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

00.4

3.2

VGS = 5 V

VGS = 2.5 V

VGS = 5 V

VGS = 3 V

1.6

0.4

1.2 2.0 1 4.21.8 3.41.4 2.2 2.6 3 3.8

0.08

0.04

1.2

0.28

0.24

0.2

0.16

0.12

0.08

0.04

175

VGS = 3.5 V

VGS = 4 V

TJ = 150°C

TJ = 100°C

TJ = 25°C

TJ = 100°C

TJ = −55°C

VDS ≥ 10 V

VGS = 0 V

2.4

2.8

2.4

TJ = 125°C

NTF3055L175

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10 10 155020525

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS

100

0.1

0.001

100

700

500

400

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE

(VOLTS)

C, CAPACITANCE (pF)

300

200

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE ()

Figure 10. Diode Forward Voltage versus Current

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

t, TIME (ns)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID, DRAIN CURRENT (AMPS)

EAS, SINGLE PULSE DRAIN−TO−SOURCE

AVALANCHE ENERGY (mJ)

05426

1 10 100 0.6 0.720.680.64 0.84

0.1 10 1001 25 125 15010075 17550

ID = 2 A

TJ = 25°C

VGS

VGS = 0 V

VDS = 0 V TJ = 25°C

Crss

Ciss

Coss

Crss

1.6

1.2

0.76 0.8

Ciss

VGS = 15 V

SINGLE PULSE

TC = 25°C

VDS = 30 V

ID = 2 A

VGS = 5 V

VGS = 0 V

TJ = 25°C

ID = 6 A

1 ms 100 s

10 ms

trtd(off)

td(on)

VDS

0.88

0.01

031

0.8

0.4

100

600 6

10 s

NTF3055L175

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100

0.1 1001010.10.001 1000

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

t, TIME (s)

Figure 13. Thermal Response

0.010.00010.00001

TEST TYPE > MIN PAD 1 OZ

(Cu Area = 0.272 sq in)

< DIE SIZE 56 X 56 MILS

RJC = MIN PAD 1 OZ

(Cu Area = 0.272 sq in) °C/W

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.1

0.05

0.01

SINGLE PULSE

ORDERING INFORMATION

Device Package Shipping†

NTF3055L175T1 SOT−223 (TO−261) 1000 / Tape & Reel

NTF3055L175T1G SOT−223 (TO−261)

(Pb−Free) 1000 / Tape & Reel

NTF3055L175T3 SOT−223 (TO−261) 4000 / Tape & Reel

NTF3055L175T3G SOT−223 (TO−261)

(Pb−Free) 4000 / Tape & Reel

NTF3055L175T3LF SOT−223 (TO−261) 4000 / Tape & Reel

NTF3055L175T3LFG SOT−223 (TO−261)

(Pb−Free) 4000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTF3055L175

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PACKAGE DIMENSIONS

STYLE 3:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

123

0.08 (0003)

DIM

MIN MAX MIN MAX

MILLIMETERS

0.249 0.263 6.30 6.70

INCHES

B0.130 0.145 3.30 3.70

C0.060 0.068 1.50 1.75

D0.024 0.035 0.60 0.89

F0.115 0.126 2.90 3.20

G0.087 0.094 2.20 2.40

H0.0008 0.0040 0.020 0.100

J0.009 0.014 0.24 0.35

K0.060 0.078 1.50 2.00

L0.033 0.041 0.85 1.05

M0 10 0 10

S0.264 0.287 6.70 7.30

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.



SOT−223 (TO−261)

CASE 318E−04

ISSUE K

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.5

0.059

SOT−223

mm

inches

SCALE 6:1

3.8

0.15

2.0

0.079

6.3

0.248

2.3

0.091 2.3

0.091

2.0

0.079

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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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Phone: 81−3−5773−3850

NTF3055L175/D

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