HAF2011(L),HAF2011(S) Silicon N Channel MOS FET Series Power Switching ADE-208-738A (Z) 2nd. Edition July 2000 This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features * * * * Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shut-down circuit Latch type shut-down operation (Need 0 voltage recovery) Outline LDPAK D 4 Gate resistor G Tempe- rature Sencing Circuit Latch Circuit 4 1 1 Gate Shut- down Circuit S 2 2 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF2011(L), HAF2011(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 16 V Gate to source voltage VGSS -2.5 V Drain current ID 40 A 80 A 40 A 50 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 1. PW 10s, duty cycle 1 % 2. Value at Ta = 25C Typical Operation Characteristics Item Symbol Min Typ Max Unit Input voltage VIH 3.5 -- -- V VIL -- -- 1.2 V Input current I IH1 -- -- 100 A Vi = 8V, VDS = 0 (Gate non shut down) I IH2 -- -- 50 A Vi = 3.5V, VDS = 0 I IL -- -- 1 A Vi = 1.2V, VDS = 0 Input current I IH(sd)1 -- 0.8 -- mA Vi = 8V, VDS = 0 (Gate shut down) I IH(sd)2 -- 0.35 -- mA Vi = 3.5V, VDS = 0 Shut down temperature Tsd -- 175 -- C Channel temperature Gate operation voltage VOP 3.5 -- 12 V 2 Test Conditions HAF2011(L), HAF2011(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain current I D1 15 -- -- A VGS = 3.5V, VDS = 2V Drain current I D2 -- -- 10 mA VGS = 1.2V, VDS = 2V Drain to source breakdown voltage V(BR)DSS 60 -- -- V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 16 -- -- V I G = 300A, VDS = 0 Gate to source breakdown voltage V(BR)GSS -2.5 -- -- V I G = -100A, VDS = 0 Gate to source leak current I GSS1 -- -- 100 A VGS = 8V, VDS = 0 I GSS2 -- -- 50 A VGS = 3.5V, VDS = 0 I GSS3 -- -- 1 A VGS = 1.2V, VDS = 0 I GSS4 -- -- -100 A VGS = -2.4V, VDS = 0 I GS(op)1 -- 0.8 -- mA VGS = 8V, VDS = 0 I GS(op)2 -- 0.35 -- mA VGS = 3.5V, VDS = 0 I DSS -- -- 10 A VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.25 V I D = 1mA, VDS = 10V Static drain to source on state RDS(on) resistance -- 25 33 m I D = 20A, VGS = 4V Note3 Static drain to source on state RDS(on) resistance -- 15 20 m I D = 20A, VGS = 10V Note3 Forward transfer admittance |yfs| 8 16 -- S I D = 20A, VDS = 10V Note3 Output capacitance Coss -- 940 -- pF VDS = 10V , VGS = 0 f = 1 MHz Turn-on delay time t d(on) -- 10.7 -- s I D = 20A, VGS = 5V Rise time tr -- 66 -- s RL = 1.5 Turn-off delay time t d(off) -- 15.5 -- s Fall time tf -- 19 -- s Body-drain diode forward voltage VDF -- 1 -- V I F = 40A, VGS = 0 Body-drain diode reverse recovery time t rr -- 200 -- ns I F = 40A, VGS = 0 diF/ dt =50A/s Over load shut down operation time Note4 t os1 -- 1 -- ms VGS = 5V, VDD = 16V Input current (shut down) Zero gate voltage drain current Note: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition. See characteristic curve of HAF2005. 3 HAF2011(L), HAF2011(S) Main Characteristics Power vs. Temperature Derating Thermal shut down 200 Operation area Drain Current I D (A) Pch (W) Channel Dissipation Maximum Safe Operation Area 500 80 60 40 20 0 50 100 150 Case Temperature 50 1 20 DC 10 PW Op er 5 10 0 m s = 10 s m s at ion ( 2 Operation in this area Tc = 25 1 is limited by R DS(on) C ) 0.5 Ta = 25C 0.3 200 10 s 100 0.5 1 2 5 10 20 50 100 Drain to Source Voltage V DS (V) Tc (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C 0.1 0.05 0.03 0.01 10 PDM 0.02 1 lse 0.0 t pu o h 1s 100 PW T PW T 1m 10 m Pulse Width PW (S) 4 D= 100 m 1 10 HAF2011(L), HAF2011(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 5 HAF2011(L), HAF2011(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 6 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g HAF2011(L), HAF2011(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 7 HAF2011(L), HAF2011(S) Cautions 1. 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