DG201B/202B Improved Quad CMOS Analog Switches Features Benefits Applications 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 45 Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 120 ns Low Glitching--Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG201A/202 Space Savings (TSSOP) Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits Description The DG201B/202B analog switches are highly improved versions of the industry-standard DG201A/202. These devices are fabricated in Siliconix' proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG201B and DG202B can handle up to 22-V input signals, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply voltages in the off condition. The DG201B is a normally closed switch and the DG202B is a normally open switch. (See Truth Table.) Functional Block Diagram and Pin Configuration DG201B Dual-In-Line, SOIC and TSSOP IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 0 ON OFF 1 OFF ON Logic "0" 0.8 V Logic "1" 2.4 V Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70037. Siliconix S-52896--Rev. F 14-Jul-97 1 DG201B/202B Ordering Information Temp Range Package Part Number DG201BDJ 16-Pin Plastic DIP DG202BDJ DG201BDK 16-Pin CerDIP -40 to 85_C 16-Pin Narrow SOIC 16-Pin TSSOP DG202BDK DG201BDY DG202BDY DG201BDQ DG202BDQ DG201BAK DG201BAK/883 -55 to 125_C 16-Pin CerDIP DG202BAK DG202BAK/883 Absolute Maximum Ratings Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, DK Suffix) . . . . . . . . . . -65 to 150_C (DJ, DY, DQ Suffix) . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C Schematic Diagram (Typical Channel) V+ 5V Reg SX Level Shift/ Drive INX V- V+ DX GND V- Figure 1. 2 Siliconix S-52896--Rev. F 14-Jul-97 DG201B/202B Specificationsa Test Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V V- V = -15 15 V V+ VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix -55 to 125_C -40 to 85_C Mind Maxd Mind Maxd Unit Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance rDS(on) Match rDS(on) Full VD = 10 V,, IS = 1 mA DrDS(on) Room Full 45 Room 2 V Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room Full 0.01 -0.5 -5 0.5 5 Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room Full 0.01 0.5 5 Drain On Leakage Current ID(on) VS = VD = 14 V Room Full 0.02 0.5 10 W nA Digital Control Input Voltage High VINH Full Input Voltage Low VINL Full Input Current Input Capacitance IINH or IINL VINH or VINL CIN Full - V - Room 5 Room Full 120 Room Full 65 Room 1 Room 5 Room 5 Room 16 Room 90 Room 95 mA pF Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance tON VS = 2 V S Switching See S i hi Time Ti T Test Ci Circuit i tOFF Q CS(off) Drain-Off Capacitance CD(off) Channel On Capacitance CD(on) Off Isolation OIRR Channel-to-Channel Crosstalk XTALK CL = 1000 pF, Vg = 0 V Rg = 0 W VS = 0 V V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 pF pF, RL = 50 W VS = 1 VRMS, f = 100 kHz ns pC pF dB Power Supply Room Full 50 Positive Supply Current I+ Negative Supply Current I- Room Full Power Supply Range for Continuous Operation VOP Full VIN = 0 or 5 V Siliconix S-52896--Rev. F 14-Jul-97 50 mA V 3 DG201B/202B Specificationsa for Single Supply Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 Vf Tempb Typc A Suffix D Suffix -55 to 125_C -40 to 85_C Mind Maxd Mind Maxd Unit V W Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG Full Room Full 90 VS = 8 V S Switching See S i hi Time Ti T Test Ci Circuit i Room 120 Room 60 CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room 4 rDS(on) VD = 3 V, 8 V, IS = 1 mA Turn-On Time tON Turn-Off Time tOFF Dynamic Characteristics Charge Injection Q ns pC Power Supply Room Full 50 Positive Supply Current I+ Negative Supply Current I- Room Full Power Supply Range for Continuous Operation VOP Full VIN = 0 or 5 V 50 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. 4 Siliconix S-52896--Rev. F 14-Jul-97 mA V DG201B/202B Typical Characteristics rDS(on) vs. VD and Power Supply Voltages rDS(on) vs. VD and Temperature 110 100 100 90 90 80 5 V 70 rDS(on) ( ) 80 rDS(on) ( ) V+ = 15 V V- = -15 V 70 10 V 60 15 V 50 40 20 V 30 60 125_C 50 85_C 40 25_C 30 -55_C 20 20 10 0 -15 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 -10 -5 0 5 10 15 VD - Drain Voltage (V) VD - Drain Voltage (V) rDS(on) vs. VD and Single Power Supply Voltages Input Switching Threshold vs. Supply Voltage 250 2.5 225 V+ = 5 V 200 2 150 VIN ( V ) rDS(on) ( ) 175 7V 125 10 V 100 12 V 1.5 1 15 V 75 50 0.5 25 0 0 2 4 6 8 10 12 14 0 4 16 Leakage Currents vs. Analog Voltage 10 12 14 16 18 20 Leakage Currents vs. Temperature 80 1 nA V+ = 22 V V- = -22 V TA = 25_C V+ = 15 V V- = -15 V VS, VD = 14 V 40 I S , I D - Current I S, I D - Current (pA) 8 V+, V- Positive and Negative Supplies (V) VD - Drain Voltage (V) 60 6 20 0 -20 IS(off), ID(off) ID(on) 100 pA IS(off), ID(off) 10 pA -40 -60 -80 -20 -15 -10 -5 0 5 Temperature (_C) Siliconix S-52896--Rev. F 14-Jul-97 10 15 20 1 pA -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C) 5 DG201B/202B Typical Characteristics (Cont'd) Switching Time vs. Single Supply Voltage Switching Time vs. Power Supply Voltage 400 500 V- = 0 V 400 Switching Time (ns) Switching Time (ns) 300 300 200 ton 200 ton 100 100 toff toff 0 0 2 4 6 8 10 12 14 16 18 20 0 V+ - Positive Supply (V) 4 8 12 16 20 V+, V- Positive and Negative Supplies (V) QS, QD - Charge Injection vs. Analog Voltage Off Isolation vs. Frequency 30 120 V+ = 15 V V- = -15 V 110 20 10 0 V+ = 15 V V- = -15 V OIRR (dB) Q - Charge (pC) 100 V+ = 12 V V- = 0 V 90 RL = 50 80 70 -10 60 -20 -30 -15 50 -10 -5 0 5 10 40 10 k 15 100 k VANALOG - Analog Voltage (V) 1M 10 M f - Frequency (Hz) Supply Current vs. Switching Frequency I+ - Supply Current (mA) 4 3 2 1 0 1k 10 k 100 k 1M f - Frequency (Hz) 6 Siliconix S-52896--Rev. F 14-Jul-97 DG201B/202B Test Circuits +15 V V+ D S VS = +2 V VO IN GND tr <20 ns tf <20 ns 50% 0V tOFF CL 35 pF RL 1 kW 3V 3V Logic Input V- 90% Switch Output -15 V VO = VS VO tON RL RL + rDS(on) Figure 2. Switching Time +15 V C +15 V C V+ S1 VS V+ S VS VO D 50 W IN1 Rg = 50 W 0V, 2.4 V D1 Rg = 50 W 0V, 2.4 V RL IN S2 NC GND V- C VO D2 RL IN2 0V, 2.4 V GND V- C -15 V C = RF bypass Off Isolation = 20 log VS XTALK Isolation = 20 log VO Figure 3. Off Isolation VS -15 V VO Figure 4. Channel-to-Channel Crosstalk +15 V DVO Rg VO V+ S D IN Vg 3V GND V- VO CL 1000 pF INX ON OFF ON DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V Figure 5. Charge Injection Siliconix S-52896--Rev. F 14-Jul-97 7 DG201B/202B Applications +15 V V+ Logic Input Low = Sample High = Hold 1 kW +15 V +15 V -15 V - LM101A VIN + J202 2N4400 5 MW 200 W 50 pF VOUT 5.1 MW 1000 pF DG201B V- J500 30 pF J507 -15 V = 25 ms = 1 ms = 5 mV = 5 mV/s Aquisition Time Aperature Time Sample to Hold Offset Droop Rate -15 V Figure 6. Sample-and-Hold +15 V 160 V1 C4 TTL Control fC3 Select fC2 Select 150 pF 120 C3 Voltage Gain - dB fC4 Select 1500 pF C2 0.015 mF C1 fC1 Select 0.15 mF 80 40 fC1 fC2 fC3 fL1 0 V- fC4 fL2 fL3 fL4 DG201B GND -40 1 -15 V 10 100 1k 10 k -15 V R1 = 10 kW LM101A + R2 = 10 kW VOUT AL (Voltage Gain Below Break Frequency) = fC (Break Frequency) = 2pR C 3 X fL (Unity Gain Frequency) = 30 pF 1M f - Frequency (Hz) R3 = 1 MW +15 V - 100 k Max Attenuation = rDS(on) 10 kW R3 R1 = 100 (40 dB) 2pR1CX -47 dB Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency 8 Siliconix S-52896--Rev. F 14-Jul-97 DG201B/202B Applications (Cont'd) VIN1 +5 V +15 V VL V+ 30 pF +15 V + LM101A VIN2 - +15 V DG419 -15 V DG202B RF1 18 k RF1 9.9 k RF1 100 k RG1 2 k RG2 100 RG3 100 CH GND V- -15 V Gain = RF + RG RG Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- GND Logic High = Switch On -15 V Figure 8. A Precision Amplifier with Digitally Programable Input and Gains Siliconix S-52896--Rev. F 14-Jul-97 9