IN1IN2
D1D2
S1S2
V– V+
GND NC
S4S3
D4D3
IN4IN3
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top View
DG201B
Dual-In-Line, SOIC and TSSOP
DG201B/202B
Siliconix
S-52896—Rev. F 14-Jul-97 1
Improved Quad CMOS Analog Switches
Features Benefits Applications
22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—rDS(on): 45
Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: 120 ns
Low Glitching—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Superior to DG201A/202
Space Savings (TSSOP)
Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
Description
The DG201B/202B analog switches are highly improved
versions of the industry-standard DG201A/202. These
devices are fabricated in Siliconix’ proprietary silicon gate
CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG201B and DG202B
can handle up to 22-V input signals, and have an
improved continuous current rating of 30 mA. An epitaxial
layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in
the off condition.
The DG201B is a normally closed switch and the DG202B
is a normally open switch. (See Truth Table.)
Functional Block Diagram and Pin Configuration
0 ON OFF
1 OFF ON
Logic “0” 0.8 V
Logic “1” 2.4 V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70037.
DG201B/202B
2 Siliconix
S-52896—Rev. F 14-Jul-97
Ordering Information
Temp Range Package Part Number
16
-
Pin Plastic DIP
DG201BDJ
16
-
Pi
n
Pl
as
ti
c
DIP
DG202BDJ
16
-
Pin CerDIP
DG201BDK
–
40 to 85
_
C
16
-
Pi
n
C
er
DIP
DG202BDK
–
40
t
o
85_C
16
-
Pin Narrow SOIC
DG201BDY
16
-
Pi
n
N
arrow
SOIC
DG202BDY
16
-
Pin TSSOP
DG201BDQ
16
-
Pi
n
TSSOP
DG202BDQ
DG201BAK
–
55 to 125
_
C
16
-
Pin CerDIP
DG201BAK/883
–
55
t
o
125_C
16
-
Pi
n
C
er
DIP
DG202BAK
DG202BAK/883
Absolute Maximum Ratings
Voltages Referenced to V–
V+ 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD(V–) –2 V to (V+) +2 V . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Current, Any Terminal 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) 100 mA. . . . . . . . . . . . . . . . . . . .
Storage Temperature (AK, DK Suffix) –65 to 150_C. . . . . . . . . .
(DJ, DY, DQ Suffix) –65 to 125_C. . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc470 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Narrow SOIC and TSSOPd640 mW. . . . . . . . . . . . . . . . . . . . . .
16-Pin CerDIPe900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by
internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
Schematic Diagram (Typical Channel)
Figure 1.
DX
SX
V+
INX
V–
Level
Shift/
GND
V+
V–
5 V
Reg
Drive
DG201B/202B
Siliconix
S-52896—Rev. F 14-Jul-97 3
Specificationsa
Test Conditions
Unless Otherwise Specified
V15VV 15V
A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V
Drain-Source On-Resistance rDS(on) VD = 10 V, IS = 1 mA
Room
Full 45
W
rDS(on) Match DrDS(on)
D,S
Room 2
Source Off Leakage Current IS(off) VS = 14 V, VD = 14 V Room
Full 0.01
–0.5
–5 0.5
5
Drain Off Leakage Current ID(off) VD = 14 V, VS = 14 V Room
Full 0.01
0.5
5nA
Drain On Leakage Current ID(on) VS = VD = 14 V Room
Full 0.02
0.5
10
Digital Control
Input Voltage High VINH Full
V
Input Voltage Low VINL Full
V
Input Current IINH or
IINL VINH or VINL Full – – mA
Input Capacitance CIN Room 5 pF
Dynamic Characteristics
Turn-On Time tON VS = 2 V
S Sihi Ti T Ci i
Room
Full 120
ns
Turn-Off Time tOFF
S
See Switching Time Test Circuit Room
Full 65 ns
Charge Injection Q CL = 1000 pF, Vg = 0 V
Rg = 0 WRoom 1 pC
Source-Off Capacitance CS(off)
VS=0Vf=1MHz
Room 5
Drain-Off Capacitance CD(off)
V
S =
0
V
,
f
=
1
MH
zRoom 5 pF
Channel On Capacitance CD(on) VD = VS = 0 V, f = 1 MHz Room 16
Off Isolation OIRR
CL=15pFR
L=50W
Room 90
Channel-to-Channel
Crosstalk XTALK
C
L =
15
p
F
,
R
L =
50
W
VS = 1 VRMS, f = 100 kHz Room 95 dB
Power Supply
Positive Supply Current I+
VIN =0or5V
Room
Full 50
50
mA
Negative Supply Current I–
V
IN =
0
or
5
V
Room
Full
m
A
Power Supply Range for
Continuous Operation VOP Full V
DG201B/202B
4 Siliconix
S-52896—Rev. F 14-Jul-97
Specificationsa for Single Supply
Test Conditions
Unless Otherwise Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 12 V, V– = 0 V
VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full V
Drain-Source
On-Resistance rDS(on) VD = 3 V, 8 V, IS = 1 mA Room
Full 90
W
Dynamic Characteristics
Turn-On Time tON VS = 8 V
S Sihi Ti T Ci i
Room 120
ns
Turn-Off Time tOFF
S
See Switching Time Test Circuit Room 60 ns
Charge Injection Q CL = 1 nF, Vgen= 6 V, Rgen = 0 WRoom 4 pC
Power Supply
Positive Supply Current I+
VIN =0or5V
Room
Full 50
50
mA
Negative Supply Current I–
V
IN =
0
or
5
V
Room
Full
m
A
Power Supply Range for
Continuous Operation VOP Full V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG201B/202B
Siliconix
S-52896—Rev. F 14-Jul-97 5
Typical Characteristics
–20 –16 –12 –8 –4 0 4 8 12 16 20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
–15 –10 –5 0 5 10 15
0246810121416
0
25
50
75
100
125
150
175
200
225
0
0.5
1
1.5
2
2.5
rDS(on) ()
5 V
rDS(on) vs. VD and Power Supply Voltages
VD – Drain Voltage (V)
10 V
15 V
20 V
rDS(on) ()
r
DS(on) vs. VD and Temperature
VD – Drain Voltage (V)
125_C
85_C
25_C
–55_C
V+ = 15 V
V– = –15 V
rDS(on) ()
r
DS(on) vs. VD and Single Power Supply Voltages
VD – Drain Voltage (V)
VIN ()V
Input Switching Threshold vs. Supply Voltage
46810 12 14 16 18 20
V+ = 5 V
7 V
10 V 12 V 15 V
30
20
10
60
70
80
90
100
250
IS(off), ID(off)
ID(on)
–20 –15 –10 –5 0 5 10 15 20
80
60
40
20
0
–20
–40
–60
–80
Temperature (_C)
Leakage Currents vs. Analog Voltage
IS, ID– Current (pA)
–55 25 455–15 65
1 nA
100 pA
10 pA
–35
1 pA 85 105 125
V+ = 15 V
V– = –15 V
VS, VD = 14 V
IS(off), ID(off)
Temperature (_C)
Leakage Currents vs. Temperature
– CurrentI , I
SD
V+, V- Positive and Negative Supplies (V)
V+ = 22 V
V– = –22 V
TA = 25_C
DG201B/202B
6 Siliconix
S-52896—Rev. F 14-Jul-97
Typical Characteristics (Cont’d)
02 4 6 8 10 12 14 16 18 20
100
200
300
400
500
V– = 0 V
ton
toff
Switching T ime (ns)
Switching Time vs. Single Supply Voltage
0
100
200
300
400
ton
toff
Switching T ime (ns)
Switching Time vs. Power Supply Voltage
04812 16 20
–15 –10 –5 0 5 10 15
30
20
10
0
–10
–20
–30
V+ = 15 V
V– = –15 V V+ = 12 V
V– = 0 V
Q – Charge (pC)
QS, QD – Charge Injection vs. Analog Voltage
10 k 100 k 1 M 10 M
40
50
60
70
80
90
100
110
120 Off Isolation vs. Frequency
OIRR (dB)
V+ = 15 V
V– = –15 V
RL = 50
1 k 10 k 100 k 1 M
4
3
2
1
0
I+ – Supply Current (mA)
Supply Current vs. Switching Frequency
V+ – Positive Supply (V) V+, V– Positive and Negative Supplies (V)
VANALOG – Analog Voltage (V)
f – Frequency (Hz)
f – Frequency (Hz)
DG201B/202B
Siliconix
S-52896—Rev. F 14-Jul-97 7
Test Circuits
Figure 2. Switching Time
Figure 3. Off Isolation
50%
0 V
3 V
tOFF
tON
VO
tr <20 ns
tf <20 ns
Logic
Input
Switch
Output
90%
CL
35 pF
RL
1 kW
VO = VSRL + rDS(on)
RL
VS = +2 V VO
V–
V+
IN
SD
3 V
–15 V
GND
+15 V
S
IN RL
D
Rg = 50 W
VSVO
0V, 2.4 V
Off Isolation = 20 log VS
VO
V+
–15 V
GND V– C
C
+15 V
IN1
0V, 2.4 V
VO
+15 V
–15 V
GND
RL
V+
V–
NC
XTALK Isolation = 20 log
C
VS
C
VO
0V, 2.4 V
50 W
VSS1
IN2
S2
Rg = 50 W
D1
D2
C = RF bypass
Figure 4. Channel-to-Channel Crosstalk
Figure 5. Charge Injection
CL
1000 pF
Vg3 V
D
V+
V–
Rg
–15 V
GND
IN
SVO
+15 V
VO
DVO
INXON ONOFF
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
DG201B/202B
8 Siliconix
S-52896—Rev. F 14-Jul-97
Applications
Figure 6. Sample-and-Hold
LM101A
+15 V
–15 V
30 pF
+15 V
–15 V
V+
V– DG201B
50 pF
1000 pF
J202
J500
J507
+15 V
2N4400
–15 V
VIN VOUT
1 kW
200 W
5 MW
5.1 MW
Aquisition Time = 25 ms
Aperature Time = 1 ms
Sample to Hold Offset = 5 mV
Droop Rate = 5 mV/s
Logic Input
Low = Sample
High = Hold
–
+
fC1 fC2 fC3
TTL
Control
150 pF
1500 pF
+15 V
DG201B GND
30 pF
LM101A
+15 V
–15 V
1 10 100 1 k 10 k 100 k 1 M
–40
0
160
120
80
Voltage Gain – dB
fC4
Select
fC3
Select
fC2
Select
fC1
Select
R1 = 10 kW
R2 = 10 kW
R3 = 1 MW
VOUT
V1
V–
C4
C3
C2
C1
fL1
fC4
fL2 fL3 fL4
AL (Voltage Gain Below Break Frequency) = = 100 (40 dB)
R3
R1
fC (Break Frequency) =
2pR3CX
2pR1CX
fL (Unity Gain Frequency) =
Max Attenuation = rDS(on)
10 kW
–47 dB
0.015 mF
0.15 mF
Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency
–15 V
–
+
40
f – Frequency (Hz)
DG201B/202B
Siliconix
S-52896—Rev. F 14-Jul-97 9
Applications (Cont’d)
Figure 8. A Precision Amplifier with Digitally Programable Input and Gains
Gain = Gain 1 (x1)
Gain 2 (x10)
Gain 3 (x100)
Gain 4 (x1000)
–15 V
+15 V
–15 V
GND
DG419
30 pF
+15 V
+15 V
–15 V DG202B
Logic High = Switch On
+
–
LM101A
RF + RG
RG
VIN1
VIN2
CH
RF1
18 k
RF1
9.9 k
RF1
100 k
RG3
100
RG2
100
RG1
2 k
V+
V–
GNDV–
+5 V
VL
