BCM857BS 45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data * BVCEO > -45V * * IC = -100mA High Collector Current * * * Pair of PNP Transistors That Are Intrinsically Matched (Note 1) 10% Matching on Current Gain (hFE) * Moisture Sensitivity: Level 1 per J-STD-020 * 2mV Matching on Base-Emitter Voltage (VBE) * * Fully Internally Isolated in a Small Surface Mount Package Terminals: Finish -- Matte Tin Finish. Solderable per MIL-STD-202, Method 208 e3 * Totally Lead-Free & Fully RoHS compliant (Notes 2 & 3) * Weight: 0.006 grams (approximate) * Halogen and Antimony Free. "Green" Device (Note 4) * Qualified to AEC-Q101 for High Reliability Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 C1 SOT363 C2 B2 B1 SOT363 E1 E2 Top View Top View Pin-Out Device Symbol Ordering Information (Note 5) Product BCM857BS-7-F Notes: Compliance AEC-Q101 Marking M3W Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 4. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information M3W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 BCM857BS Datasheet Number DS37299 Rev. 1 - 2 Mar 3 2016 D Apr 4 2017 E May 5 Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D June 2014 (c) Diodes Incorporated BCM857BS Absolute Maximum Ratings (@TA = +25C unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V mA Collector Current IC -100 Peak Collector Current ICM -200 mA Peak Base Current IBM -200 mA Symbol Value Unit PD 200 mW RJA 625 C/W TJ, TSTG -65 to +150 C Thermal Characteristics (@TA = +25C unless otherwise specified.) Characteristic Power Dissipation (Note 6) Total Device Thermal Resistance, Junction to Ambient Air (Note 6) Operating and Storage Temperature Range ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C Electrical Characteristics (@TA = +25C unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic (Note 8) BVCBO -50 -- -- V IC = 100A, IB = 0 Collector-Emitter Breakdown Voltage BVCEO -45 -- -- V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -5 -- -- V IE = 100A, IC = 0 hFE 220 -- 475 -- VCE = -5.0V, IC = -2.0mA hFE1/ hFE2 0.9 1 -- -- VCE = -5.0V, IC = -2.0mA -- -- -100 -400 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA DC Current Gain DC Current Gain matching (Note 9) Test Condition Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) -- -700 -- mV IC = -10mA, IB = -0.5mA Base-Emitter Voltage VBE(on) -580 -665 -750 mV VCE = -5.0V, IC = -2.0mA VBE1(on) VBE2(on) -- -- 2 mV VCE = -5.0V, IC = -2.0mA VBE(on) -580 -665 -750 mV VCE = -5.0V, IC = -2.0mA Collector-Cutoff Current ICBO -- -- -- -- -15 -4.0 nA A VCB = -30V VCB = -30V, TA = +150C Emitter Cutoff Current IEBO -- -- -100 nA Base-Emitter Voltage matching (Note 10) Base-Emitter Voltage VEB = -5.0V, IC = 0 fT 100 -- -- MHz VCE = -5.0V, IC = -10mA, f = 100MHz Collector-Base Capacitance CCBO -- 2 3 pF VCB = -10V, f = 1.0MHz Emitter-Base Capacitance CEBO -- 11 -- pF VEB = -0.5V, f = 1.0MHz Gain Bandwidth Product Notes: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 8. Short duration pulse test used to minimize self-heating effect. 9. The smaller of the two values is taken as the numerator. 10. The smaller of the two values is subtracted from the larger value. BCM857BS Datasheet Number DS37299 Rev. 1 - 2 2 of 5 www.diodes.com June 2014 (c) Diodes Incorporated BCM857BS Typical Electrical Characteristics (@TA = +25C unless otherwise specified.) 1,000 200 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 250 150 100 10 50 0 1 0 100 200 TA, AMBIENT TEMPERATURE ( C) Fig. 1 Power Dissipation vs. Ambient Temperature 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 0.5 VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100 0.4 0.3 100 0.2 0.1 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current BCM857BS Datasheet Number DS37299 Rev. 1 - 2 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current 3 of 5 www.diodes.com June 2014 (c) Diodes Incorporated BCM857BS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0 8 All Dimensions in mm B C H K M J D L F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X BCM857BS Datasheet Number DS37299 Rev. 1 - 2 4 of 5 www.diodes.com June 2014 (c) Diodes Incorporated BCM857BS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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