BCM857BS-7-F - DIODES INC - Datasheet.Live

BCM857BS

Datasheet Number DS37299 Rev. 1 - 2

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June 2014

BCM857BS

45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363

Features

• BVCEO > -45V

• I

C = -100mA High Collector Current

• Pair of PNP Transistors That Are Intrinsically Matched (Note 1)

• 10% Matching on Current Gain (hFE)

• 2mV Matching on Base-Emitter Voltage (VBE)

• Fully Internally Isolated in a Small Surface Mount Package

• Totally Lead-Free & Fully RoHS compliant (Notes 2 & 3)

• Halogen and Antimony Free. "Green" Device (Note 4)

• Qualified to AEC-Q101 for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin Finish. Solderable per

MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

BCM857BS-7-F AEC-Q101 M3W 7 8 3,000

Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer.

2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

4. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020 2021

Code B C D E F G H I

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Device Symbol

M3W = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: B = 2014)

M = Month (ex: 9 = September)

Top View

SOT363

Top View

Pin-Out

SOT363

BCM857BS

Datasheet Number DS37299 Rev. 1 - 2

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June 2014

BCM857BS

Absolute Maximum Ratings (@TA = +25°C unless otherwise specified.)

Characteristic Symbol Value Unit

Collector-Base Voltage VCBO -50 V

Collector-Emitter Voltage VCEO -45 V

Emitter-Base Voltage VEBO -5.0 V

Collector Current IC -100 mA

Peak Collector Current ICM -200 mA

Peak Base Current IBM -200 mA

Thermal Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 6) Total Device PD 200 mW

Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 625 °C/W

Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C

ESD Ratings (Note 7)

Characteristic Symbol Value Unit JEDEC Class

Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A

Electrostatic Discharge - Machine Model ESD MM 400 V C

Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition

Collector-Base Breakdown Voltage BVCBO -50 — — V

IC = 100µA, IB = 0

Collector-Emitter Breakdown Voltage BVCEO -45 — — V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage BVEBO -5 — — V

IE = 100µA, IC = 0

DC Current Gain hFE 220 — 475 —

VCE = -5.0V, IC = -2.0mA

DC Current Gain matching (Note 9) hFE1/ hFE2 0.9 1 — —

VCE = -5.0V, IC = -2.0mA

Collector-Emitter Saturation Voltage VCE(sat) — —

-100

-400 mV IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base-Emitter Saturation Voltage VBE(sat) — -700 — mV

IC = -10mA, IB = -0.5mA

Base-Emitter Voltage VBE(on) -580 -665 -750 mV

VCE = -5.0V, IC = -2.0mA

Base-Emitter Voltage matching (Note 10) VBE1(on) -

VBE2(on) — — 2 mV

VCE = -5.0V, IC = -2.0mA

Base-Emitter Voltage VBE(on) -580 -665 -750 mV

VCE = -5.0V, IC = -2.0mA

Collector-Cutoff Current ICBO —

—

-15

-4.0

µA

VCB = -30V

VCB = -30V, TA = +150°C

Emitter Cutoff Current IEBO — — -100 nA

VEB = -5.0V, IC = 0

Gain Bandwidth Product fT 100 — — MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector-Base Capacitance CCBO — 2 3 pF

VCB = -10V, f = 1.0MHz

Emitter-Base Capacitance CEBO — 11 — pF

VEB = -0.5V, f = 1.0MHz

Notes: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured

under still air conditions whilst operating in a steady-state.

7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

8. Short duration pulse test used to minimize self-heating effect.

9. The smaller of the two values is taken as the numerator.

10. The smaller of the two values is subtracted from the larger value.

BCM857BS

Datasheet Number DS37299 Rev. 1 - 2

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BCM857BS

Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.)

100

150

200

250

0100200

DISSI

(mW)

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature

100

1,000

10 100

FE,

I , COLLECTOR CURRENT (mA)

Fig. 2 Typical DC Current Gain vs. Collector Current

0.1

0.2

0.3

0.4

0.5

0.1 110

100 1,000

LLE

-EMI

SATURATION VOLTAGE (V)

I , COLLECTOR CURRENT (mA)

Fig. 3 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

100

1,000

110100

-BA

(

I , COLLECTOR CURRENT (mA)

Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current

BCM857BS

Datasheet Number DS37299 Rev. 1 - 2

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BCM857BS

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT363

Dim Min Max Typ

A 0.10 0.30 0.25

B 1.15 1.35 1.30

C 2.00 2.20 2.10

D 0.65 Typ

F 0.40 0.45 0.425

H 1.80 2.20 2.15

J 0 0.10 0.05

K 0.90 1.00 1.00

L 0.25 0.40 0.30

M 0.10 0.22 0.11

α 0° 8° -

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5

G 1.3

X 0.42

Y 0.6

C1 1.9

C2 0.65

B C

BCM857BS

Datasheet Number DS37299 Rev. 1 - 2

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BCM857BS

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final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

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labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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