VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES * Low VCE(on) trench IGBT technology * 5 s short circuit capability * VCE(on) with positive temperature coefficient * Maximum junction temperature 175 C * Low inductance case * Fast and soft reverse recovery antiparallel FWD * Isolated copper baseplate using DCB (direct copper bonding) technology INT-A-PAK * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS TYPICAL APPLICATIONS VCES 600 V * UPS (uninterruptable power supply) IC at TC = 80 C 50 A * Electronic welders VCE(on) (typical) at IC = 50 A, 25 C 1.65 V * Switching mode power supplies Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit configuration Half bridge DESCRIPTION Vishay's IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 600 Gate to emitter voltage VGES 20 Collector current Pulsed collector current TC = 25 C IC ICM (1) Diode continuous forward current IF Diode maximum forward current IFM (1) UNITS V 85 TC = 80 C 50 tp = 1 ms 100 TC = 80 C 50 tp = 1 ms 100 A Maximum power dissipation PD TJ = 175 C 208 W Short circuit withstand time tSC TC = 125 C 5 s 4000 V RMS isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature IGBT ELECTRICAL SPECIFICATIONS (TC = 25 C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS TJ = 25 C MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 50 A, TJ = 25 C - 1.65 2.10 VGE = 15 V, IC = 50 A, TJ = 175 C - 2.05 6.5 UNITS V VGE(th) VCE = VGE, IC = 1.4 mA, TJ = 25 C 4.0 4.9 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 C - - 1.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 C - - 400 nA Revision: 18-Sep-17 Document Number: 94666 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP60N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time TEST CONDITIONS td(on) Rise time tr Turn-off delay time td(off) Fall time tf VCC = 300 V, IC = 50 A, Rg = 3.3 , VGE = 15 V, TJ = 25 C MIN. TYP. MAX. - 58 - - 31 - - 80 - - 100 - Turn-on switching loss Eon - 0.41 - Turn-off switching loss Eoff - 0.42 - Turn-on delay time td(on) - 64 - tr - 37 - - 90 - Rise time Turn-off delay time td(off) Fall time tf VCC = 300 V, IC = 50 A, Rg = 3.3 , VGE = 15 V, TJ = 125 C - 117 - Turn-on switching loss Eon - 0.69 - Turn-off switching loss Eoff - 0.69 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Stray inductance Module lead resistance, terminal to chip VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 5 s, VGE = 15 V, TJ = 125 C, VCC = 360 V, VCEM 600 V - 3.03 - - 0.25 - - 0.09 - - 450 - UNITS ns mJ ns mJ nF A LCE - - 30 nH RCC'+EE' - 0.75 - m UNITS DIODE ELECTRICAL SPECIFICATIONS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL Forward voltage VF Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery energy TEST CONDITIONS IF = 50 A IF = 50 A, VR = 300 V, RG = 3.3 VGE = -15 V Erec MIN. TYP. MAX. TJ = 25 C - 1.35 1.75 TJ = 125 C - 1.37 - TJ = 25 C - 2.3 - TJ = 125 C - 4.3 - TJ = 25 C - 33 - TJ = 125 C - 58 - TJ = 25 C - 0.56 - TJ = 125 C - 1.11 - V C A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range Storage temperature range Junction to case per 1/2 module IGBT Diode Case to sink (Conductive grease applied) Mounting torque Weight MIN. TYP. MAX. TJ TEST CONDITIONS - - 175 C TStg -40 - 125 C RthJC RthCS - - 0.72 - - 1.02 - 0.05 - Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Weight of module - 150 UNITS K/W Nm - g Revision: 18-Sep-17 Document Number: 94666 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP60N www.vishay.com Vishay Semiconductors 100 100 90 90 VGE = 15 V 70 70 25 C 60 60 IC (A) IC (A) VCE (V) = 50 V 80 80 50 40 175 C 50 175 C 40 30 30 20 20 10 10 25 C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 6 VCE (V) 8 9 10 11 VGE (V) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 1.8 2.4 VCC = 300 V RG = 3.3 VGE = 15 V TJ = 125 C 1.6 1.4 2.2 1.8 1.6 1.0 0.8 0.6 1.4 Eon 1.2 1.0 0.8 Eoff Eoff 0.6 0.4 0.4 Eon 0.2 VCC = 300 V IC = 50 A VGE = 15 V TJ = 125 C 2.0 E (mJ) 1.2 E (mJ) 7 0.2 0 0 0 10 20 30 40 50 60 70 80 0 90 100 5 10 15 20 25 30 35 RG () IC (A) Fig. 2 - IGBT Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. RG 120 Module 100 IC (A) 80 60 40 RG = 3.3 VGE = 15 V TJ = 125 C 20 0 0 100 200 300 400 500 600 700 VCE (V) Fig. 5 - RBSOA Revision: 18-Sep-17 Document Number: 94666 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP60N www.vishay.com Vishay Semiconductors 1 ZthJC (K/W) IGBT 0.1 1 2 3 4 i: r i [K/W]: 0.0432 0.2376 0.2304 0.2088 0.01 0.02 0.05 0.1 i [s]: 0.01 0.001 0.01 0.1 1 10 t (s) Fig. 6 - IGBT Transient Thermal Impedance 100 1.8 90 1.6 80 1.4 1.2 60 E (mJ) IF (A) 70 VCC = 300 V RG = 3.3 VGE = - 15 V TJ = 125 C 50 40 1.0 Erec 0.8 0.6 30 125 C 20 0.4 25 C 0.2 10 0 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 0 2 10 20 30 40 50 60 70 80 90 100 IF (A) VF (V) Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 1.2 1.1 Erec E (mJ) 1.0 0.9 0.8 VCC = 300 V IF = 50 A VGE = - 15 V TJ = 125 C 0.7 0.6 0 5 10 15 20 25 30 35 RG () Fig. 9 - Diode Switching Loss vs. RG Revision: 18-Sep-17 Document Number: 94666 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP60N www.vishay.com Vishay Semiconductors 10 Diode ZthJC (K/W) 1 0.1 1 2 3 4 i: ri [K/W]: 0.0612 0.3366 0.3264 0.2958 i [s]: 0.01 0.02 0.05 0.1 0.01 0.001 0.01 0.1 1 10 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 18-Sep-17 Document Number: 94666 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK DIMENSIONS in millimeters (inches) Revision: 06-Aug-12 Document Number: 95524 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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