Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA !# " ! . . . for general-purpose power amplifier and switching applications. * * * * 25 A Collector Current Low Leakage Current -- ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain -- hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product -- hfe = 3.0 min @ IC = 1.0 A, f = 1.0 MHz IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIII III IIII III III IIIIIIIIIII IIII III IIII III IIIIIIIIIII III IIII III IIII III IIIIIIIIIII III IIIIIIIII III IIII III IIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III III IIIIIIIIIII IIIIIIIII III IIIIIIIIIII III IIIIIIIII III IIIIIIIIIII III IIIIIIIII III III IIIIIIIIIII IIIIIIIII III IIIIIIIIIII III IIIIIIIII III III IIIIIIIIIII IIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III v MAXIMUM RATINGS Symbol TIP35A TIP36A TIP35B TIP36B TIP35C TIP36C Unit *Motorola Preferred Device VCEO 60 V 80 V 100 V Vdc Collector-Base Voltage VCB 60 V 80 V 100 V Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak (1) IC 25 40 Adc 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 125 WATTS Base Current -- Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 125 1.0 Watts W/_C TJ, Tstg - 65 to + 150 _C ESB 90 mJ Rating Collector-Emitter Voltage Operating and Storage Junction Temperature Range Unclamped Inductive Load THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Junction-To-Free-Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle Symbol Max Unit RJC 1.0 _C/W RJA 35.7 _C/W CASE 340D-02 TO-218AC 10%. PD, POWER DISSIPATION (WATTS) 125 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (C) 150 175 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII v IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 100 -- -- -- -- -- 1.0 1.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 30 mA, IB = 0) VCEO(sus) TIP35A, TIP36A TIP35B, TIP36B TIP35C, TIP36C Collector-Emitter Cutoff Current (VCE = 30 V, IB = 0) (VCE = 60 V, IB = 0) Vdc ICEO mA TIP35A, TIP36A TIP35B, TIP35C, TIP36B, TIP36C Collector-Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES -- 0.7 mA Emitter-Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO -- 1.0 mA 25 15 -- 75 -- -- 1.8 4.0 -- -- 2.0 4.0 ON CHARACTERISTICS (1) DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) hFE -- Collector-Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) VCE(sat) Base-Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe 25 -- -- Current-Gain -- Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 -- MHz (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. VCC TURN-ON TIME RL + 2.0 V 0 3.0 TO SCOPE tr 20 ns 10 RB tr 20 ns - 30 V -11.0 V 2.0 10 TO 100 S DUTY CYCLE 2.0% RL + 9.0 V 3.0 TO SCOPE tr 20 ns 10 RB VBB + 4.0 V FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. Figure 2. Switching Time Equivalent Test Circuits 2 0.3 tr 0.2 0.1 -11.0 V tr 20 ns 10 to 100 s DUTY CYCLE 2.0% 0.7 0.5 - 30 V t, TIME ( s) VCC TURN-OFF TIME 0 TJ = 25C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 td (PNP) (NPN) 0.07 0.05 0.03 0.02 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) 20 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 30 1000 (PNP) (NPN) 3.0 ts t, TIME ( s) 2.0 500 200 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 hFE , DC CURRENT GAIN 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 tf 0.2 VCE = 4.0 V TJ = 25C 100 50 20 10 PNP NPN 5.0 2.0 0.1 0.3 0.5 0.7 1.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 0.1 30 0.2 100 IC, COLLECTOR CURRENT (AMPS) FORWARD BIAS w 300 s 50 30 20 TC = 25C 1.0 ms 10 10 ms 5.0 2.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT 1.0 0.5 0.3 0.2 0 REVERSE BIAS TIP35A, 36A TIP35B, 36B TIP35C, 36C 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 Figure 6. Maximum Rated Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. 100 50 Figure 5. DC Current Gain Figure 4. Turn-Off Time There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) TJ 100C 30 25 20 TIP35C TIP36C 15 TIP35B TIP36B 10 TIP35A TIP36A 5.0 0 0 10 40 60 80 20 30 50 70 90 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 7. Maximum Rated Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 TEST CIRCUIT VCE MONITOR L1 (SEE NOTE A) RBB1 MJE180 TUT 20 INPUT L2 (SEE NOTE A) 50 RBB2 = 100 50 - VCC = 10 V + IC MONITOR VBB2 = 0 - RS = 0.1 VBB1 = 10 V + VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms COLLECTOR CURRENT 0 - 3.0 A 0 -10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 , Chicago Standard Transformer Corporation C-2688, or equivalent. B. Input pulse width is increased until ICM = - 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching 4 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR CASE 340D-02 ISSUE B Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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