TIP36C - Motorola / Freescale Semiconductor

1

Motorola Bipolar Power Transistor Device Data

!# 

"   !

. . . for general–purpose power amplifier and switching applications.

•25 A Collector Current

•Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V

•Excellent DC Gain — hFE = 40 Typ @ 15 A

•High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A,

f = 1.0 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Î

ÎÎ

ÎÎÎ

Symbol

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TIP35A

TIP36A

ÎÎÎ

Î

ÎÎÎ

TIP35B

TIP36B

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TIP35C

TIP36C

ÎÎÎ

Î

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

60 V

ÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

60 V

ÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎ

Î

ÎÎ

ÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

25

40

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎ

IB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

_

C

Derate above 25

_

C

ÎÎÎ

Î

ÎÎ

ÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

125

1.0

ÎÎÎ

Î

ÎÎÎ

Watts

W/

_

C

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

Î

ÎÎ

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

Î

ÎÎÎ

_

C

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load

ÎÎÎ

ESB

ÎÎÎÎÎÎÎÎÎ

90

ÎÎÎ

mJ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.0

ÎÎÎ

_

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Junction–To–Free–Air Thermal Resistance

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

35.7

ÎÎÎ

_

C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

v

10%.

Figure 1. Power Derating

TC, CASE TEMPERATURE (

°

C)

0 125

0

25

175

75

100

75 100

50

125

25 150

PD, POWER DISSIPA TION (WATTS)

50

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP35A/D

 Motorola, Inc. 1996













25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–100 VOLTS

125 WATTS

*Motorola Preferred Device





 



CASE 340D–02

TO–218AC

REV 1

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

_

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0) TIP35A, TIP36A

TIP35B, TIP36B

TIP35C, TIP36C

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

60

80

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 30 V, IB = 0) TIP35A, TIP36A

(VCE = 60 V, IB = 0) TIP35B, TIP35C, TIP36B, TIP36C

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

ICEO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 5.0 V, IC = 0)

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎÎ

IEBO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎ

Î

ÎÎÎ

mA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.5 A, VCE = 4.0 V)

(IC = 15 A, VCE = 4.0 V)

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

25

15

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

75

ÎÎÎ

ÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation V oltage

(IC = 15 A, IB = 1.5 A)

(IC = 25 A, IB = 5.0 A)

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.8

4.0

ÎÎÎ

ÎÎ

Î

ÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 15 A, VCE = 4.0 V)

(IC = 25 A, VCE = 4.0 V)

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

4.0

ÎÎÎ

ÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎÎ

hfe

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

25

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)

ÎÎÎÎ

ÎÎÎ

Î

ÎÎÎÎ

fT

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

3.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

ÎÎ

Î

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

v

2.0%.

Figure 2. Switching Time Equivalent Test Circuits

0.3

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMPERES)

0.02 1.0 30

0.07

1.0

10

TJ = 25

°

C

IC/IB = 10

VCC = 30 V

VBE(off) = 2 V

t, TIME ( s)

µ

0.5

0.3

0.1

0.05

0.5 3.0 5.0

0.03

0.7

2.0

0.7 7.0

tr

0.2

2.0 20

td(PNP)

(NPN)

TURN–ON TIME

TURN–OFF TIME

+2.0 V

0

tr

≤

20 ns

–11.0 V

10 TO 100

µ

S

3.0RL

–30 VVCC

DUTY CYCLE

≈

2.0%

10

RB

TO SCOPE

tr

≤

20 ns

VBB +4.0 V

FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN, REVERSE ALL POLARITIES.

0

+9.0 V

–11.0 V

10 to 100

µ

s

tr

≤

20 ns

DUTY CYCLE

≈

2.0%

3.0RL

–30 VVCC

10

RB

TO SCOPE

tr

≤

20 ns

     

3

Motorola Bipolar Power Transistor Device Data

0.5 1.0 2.0 7.00.3 3.0 5.00.7 IC, COLLECTOR CURRENT (AMPERES)

Figure 4. Turn–Off Time

10

t, TIME ( s)

µ

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1 10 20 30

TJ = 25

°

C

VCC = 30 V

IC/IB = 10

IB1 = IB2

ts

tf

(PNP)

(NPN)

ts

tf

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

Figure 5. DC Current Gain

200

500

0.2 0.5 2.0 1000.1

100

50

20

10

1.0

VCE = 4.0 V

TJ = 25

°

C

5.0

10 205.0 50

PNP

NPN

1000

2.0

1.0

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 6 is based on TC = 25

_

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC

w

25

_

C. Second breakdown limitations do not der-

ate the same as thermal limitations.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 7 gives RBSOA characteristics.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0 201.0 50 100

0.2

0

0.5

SECONDAR Y BREAKDOWN

THERMAL LIMIT

BONDING WIRE LIMIT

1.0 ms

dc

300

µ

s

2.0

1.0

100

30

IC, COLLECTOR CURRENT (AMPS)

10 ms

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

50

20

10

5.0

0.3

2.0 3.0 5.0 10 30 70

TC = 25

°

C

TIP35A, 36A

TIP35B, 36B

TIP35C, 36C

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40 600 80 100

5.0

0

15

20

40

30

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

25

10

10 20 30 50 70 90

TJ

≤

100

°

C

TIP35A

TIP36A

TIP35B

TIP36B

TIP35C

TIP36C

     

4 Motorola Bipolar Power Transistor Device Data

Figure 8. Inductive Load Switching

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

NOTES:

A. L1 and L2 are 10 mH, 0.11 Ω, Chicago Standard Transformer Corporation C–2688, or equivalent.

B. Input pulse width is increased until ICM = –3.0 A.

C. For NPN, reverse all polarities.

INPUT 50

MJE180 RBB1

20

RBB2 = 100

VBB2 = 0

VBB1 = 10 V

VCE MONITOR

L1

(SEE NOTE A)

L2

(SEE NOTE A)

TUT

VCC = 10 V IC MONITOR

+

–

RS = 0.1

Ω

50

+

–

5.0 V

0

–3.0 A

–10 V

tw = 6.0 ms

(SEE NOTE B)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

V(BR)CER

0

100 ms

     

5

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340D–02

ISSUE B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

A

D

VG

K

SL

U

BQEC

J

H

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A––– 20.35 ––– 0.801

B14.70 15.20 0.579 0.598

C4.70 4.90 0.185 0.193

D1.10 1.30 0.043 0.051

E1.17 1.37 0.046 0.054

G5.40 5.55 0.213 0.219

H2.00 3.00 0.079 0.118

J0.50 0.78 0.020 0.031

K31.00 REF 1.220 REF

L––– 16.20 ––– 0.638

Q4.00 4.10 0.158 0.161

S17.80 18.20 0.701 0.717

U4.00 REF 0.157 REF

V1.75 REF 0.069

123

4

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

     

6 Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

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TIP35/D

*TIP35/D*

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