MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 300.2 2 26.60.2 21.20.2 3 2-R1.50.1 1 4 5 1 2 3 4 5 0.45 61 13.71 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN 18.81 23.91 H46 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG3.5V, ZG=ZL=50 f=290-330MHz, ZG=ZL=50 f=290-330MHz, VDD9V, ZG=ZL=50 f=290-330MHz, VDD9V, ZG=ZL=50 Ratings 9 4 30 3 -30 to +110 -40 to +110 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO T 2fO in Parameter Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Test conditions VDD=6V, VGG=3.5V, Pin=20mW Limits Min 290 2 40 Max 330 -20 4 Unit MHz W % dBc - - Stability ZG=50, VDD=4-9V, Load VSWR<4:1 No parasitic oscillation - - Load VSWR tolerance VDD=9V, Pin=20mW, PO=3W (VGG adjust), ZL=20:1 No degradation or destroy - Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97