SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO
M68710EL
MITSUBISHI RF POWER MODULE
Nov. ´97
1
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO: RF OUTPUT
GND: FIN
BLOCK DIAGRAM
1
2
3
4
5
4
5
3
2
Symbol Parameter Test conditions Limits
Min Max Unit
f
PO
ηT
2fO
ρin
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Load VSWR tolerance
VDD=6V,
VGG=3.5V,
Pin=20mW
VDD=9V, Pin=20mW,
PO=3W (VGG adjust), ZL=20:1
290 330
2
40 -20
No degradation or
destroy
MHz
W
%
dBc
-
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Note. Above parameters are guaranteed independently.
V9VDD Supply voltage V4VGG Gate bias voltage mW30Pin Input power W3PO Output power
°C
-30 to +110TC (OP) Operation case temperature
°C
-40 to +110Tstg Storage temperature
VGG≤3.5V, ZG=ZL=50Ω
f=290-330MHz, ZG=ZL=50Ω
f=290-330MHz, VDD≤9V, ZG=ZL=50Ω
f=290-330MHz, VDD≤9V, ZG=ZL=50Ω
Stability
4
ZG=50Ω, VDD=4-9V,
Load VSWR<4:1
-
-
No parasitic oscillation
OUTLINE DRAWING
H46
Dimensions in mm
30±0.2
26.6±0.2
21.2±0.2
0.45
6±1
23.9±1
13.7±1
18.8±1
2-R1.5±0.1
1
2
3
4
5
