30CPU04PBF - Vishay [Semiconductors]

VS-30CPU04PbF, VS-30CPU04-N3

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Ultrafast Rectifier, 2 x 15 A FRED Pt®

FEATURES

• Ultrafast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Designed and qualified according to

JEDEC-JESD47

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

DESCRIPTION/APPLICATION

FRED Pt® series are the state of the art ultrafast recovery

rectifiers specifically designed with optimized performance

of forward voltage drop and ultrafast recovery time.

The planar structure and the platinum doped life time

control, guarantee the best overall performance,

ruggedness and reliability characteristics.

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well

as freewheeling diodes in low voltage inverters and chopper

motor drives.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

PRODUCT SUMMARY

Package TO-247AC

IF(AV) 2 x 15 A

VR400 V

VF at IF1.25 V

trr typ. See Recovery table

TJ max. 175 °C

Diode variation Common cathode

Base

common

cathode

Common

cathode

Anode

TO-247AC

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Peak repetitive reverse voltage VRRM 400 V

Average rectified forward current per leg IF(AV)

total device Rated VR, TC = 149 °C 30

Non-repetitive peak surge current per leg IFSM TC = 25 °C 200

Peak repetitive forward current per leg IFRM Rated VR, TC = 149 °C, square wave, 20 kHz 30

Operating junction and storage temperatures TJ, TStg - 65 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,

blocking voltage

VBR,

IR = 100 μA 400 - -

Forward voltage VF

IF = 15 A - 1.17 1.25

IF = 15 A, TJ = 150 °C - 0.93 1.12

Reverse leakage current IR

VR = VR rated - 0.3 10 μA

TJ = 150 °C, VR = VR rated - 30 500

Junction capacitance CTVR = 400 V - 28 - pF

Series inductance LSMeasured lead to lead 5 mm from package body - 12 - nH

VS-30CPU04PbF, VS-30CPU04-N3

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Revision: 26-Jun-12 2Document Number: 94013

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time trr

IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 36 60

nsTJ = 25 °C

IF = 15 A

dIF/dt = 200 A/μs

VR = 200 V

-46-

TJ = 125 °C - 80 -

Peak recovery current IRRM

TJ = 25 °C - 3.6 - A

TJ = 125 °C - 8.7 -

Reverse recovery charge Qrr

TJ = 25 °C - 84 - nC

TJ = 125 °C - 345 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction and

storage temperature range TJ, TStg - 65 - 175 °C

Thermal resistance,

junction to case per leg RthJC -0.81.5

°C/W

Thermal resistance,

junction to ambient per leg RthJA Typical socket mount - - 40

Thermal resistance,

case to heatsink RthCS

Mounting surface, flat, smooth and

greased -0.4 -

Weight -6.0 - g

-0.21- oz.

Mounting torque 6.0

(5.0) -12

(10)

kgf · cm

(lbf · in)

Marking device Case style TO-247AC 30CPU04

VS-30CPU04PbF, VS-30CPU04-N3

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Revision: 26-Jun-12 3Document Number: 94013

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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

0.1

100

0.2 0.6 2.01.41.0 1.8

VF - Forward Voltage Drop (V)

IF - Instantaneous

Forward Current (A)

1.61.20.8

TJ = 175 °C

TJ = 150 °C

TJ = 25 °C

0.4

0.01

0.1

1000

0 100 200 300 400

0.0001

VR - Reverse Voltage (V)

IR - Reverse Current (µA)

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 25 °C

0.001

100

1000

0 100 200 300 400

VR - Reverse Voltage (V)

CT - Junction Capacitance (pF)

TJ = 25 °C

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

ZthJC - Thermal Impedance (°C/W)

Single pulse

(thermal resistance)

PDM

Notes:

1. Duty factor D = t1/t2

2. Peak TJ = PDM x ZthJC + TC

100 1 10

D = 0.50

D = 0.20

D = 0.10

D = 0.05

D = 0.02

D = 0.01

VS-30CPU04PbF, VS-30CPU04-N3

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Revision: 26-Jun-12 4Document Number: 94013

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Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 6 - Forward Power Loss Characteristics

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 8 - Typical Stored Charge vs. dIF/dt

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR

See note (1)

Square wave (D = 0.50)

Rated VR applied

05 25201510

180

170

150

140

130

IF(AV) - Average Forward Current (A)

Allowable Case Temperature (°C)

160

D = 0.01

D = 0.02

D = 0.05

D = 0.1

D = 0.2

D = 0.5

05 252010

IF(AV) - Average Forward Current (A)

Average Power Loss (W)

RMS limit

IF = 30 A

IF = 16 A

IF = 8 A

100

100 1000

trr (ns)

dIF/dt (A/µs)

VR = 200 V

TJ = 125 °C

TJ = 25 °C

IF = 30 A

IF = 16 A

IF = 8 A

1000

100 1000

Qrr (nC)

dIF/dt (A/µs)

100

VR = 200 V

TJ = 125 °C

TJ = 25 °C

VS-30CPU04PbF, VS-30CPU04-N3

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Revision: 26-Jun-12 5Document Number: 94013

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Fig. 9 - Reverse Recovery Parameter Test Circuit

Fig. 10 - Reverse Recovery Waveform and Definitions

IRFP250

D.U.T.

L = 70 μH

= 200 V

0.01 Ω

dIF/dt

adjust

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

/dt

(1)

(2)

(3)

(4)

(5)

(1) dIF/dt - rate of change of current

through zero crossing

(2) IRRM - peak reverse recovery current

(3) trr - reverse recovery time measured

from zero crossing point of negative

going IF to point where a line passing

through 0.75 IRRM and 0.50 IRRM

extrapolated to zero current.

(4) Qrr - area under curve dened by trr

and IRRM

trr x IRRM

Qrr =

(5) dI(rec)M/dt - peak rate of change of

current during tb portion of trr

VS-30CPU04PbF, VS-30CPU04-N3

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Revision: 26-Jun-12 6Document Number: 94013

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ORDERING INFORMATION TABLE

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-30CPU04PbF 25 500 Antistatic plastic tube

VS-30CPU04-N3 25 500 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95223

Part marking information TO-247ACPbF www.vishay.com/doc?95226

TO-247AC-N3 www.vishay.com/doc?95007

- Current rating (30 = 30 A)

- Circuit configuration: C = Common cathode

- TO-247AC

- Ultrafast recovery

- Voltage rating (04 = 400 V)

1- Vishay Semiconductors product

Device code

51 32 4 6 7

VS- 30 C P U 04 PbF

- Environmental digit:

PbF = Lead (Pb)-free and RoHS compliant

-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free

Outline Dimensions

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Revision: 16-Jun-11 1Document Number: 95223

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DIMENSIONS in millimeters and inches

Notes

(1) Dimensioning and tolerancing per ASME Y14.5M-1994

(2) Contour of slot optional

(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body

(4) Thermal pad contour optional with dimensions D1 and E1

(5) Lead finish uncontrolled in L1

(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c

SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051

A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3

A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC

b1 0.99 1.35 0.039 0.053 FK 2.54 0.010

b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634

b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169

b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3

b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216

D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

0.10 AC

M M

(2)

(3)

(4)

(2) R/2

2 x R

See view B

2 x e

3 x b

2 x b2

(5) L1

123

Ø K BD

M M

(6) Ø P (Datum B)

FP1

D1 (4)

0.01 BD

M M

View A - A

Thermal pad

DDE E

View B

(b1, b3, b5) Base metal

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

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