NVMFS024N06CT1G - ON SEMICONDUCTOR

December, 2019 − Rev. 1

1Publication Order Number:

NVMFS024N06C/D

MOSFET - Power, Single

N-Channel, SO-8 FL

60 V, 22 mW, 25 A

NVMFS024N06C

Features

•Small Footprint (5x6 mm) for Compact Design

•Low RDS(on) to Minimize Conduction Losses

•Low QG and Capacitance to Minimize Driver Losses

•NVMFWS024N06C − Wettable Flank Option for Enhanced Optical

Inspection

•AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

•Power Tools, Battery Operated Vacuums

•UAV/Drones, Material Handling

•BMS/Storage, Home Automation

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS ±20 V

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°CID25 A

TC = 100°C 17

Power Dissipation

RqJC (Note 1) Steady

State

TC = 25°CPD28 W

TC = 100°C 14

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°CID8A

TA = 100°C 6

Power Dissipation

RqJA (Notes 1, 2) Steady

State

TA = 25°CPD3.4 W

TA = 100°C 1.7

Pulsed Drain Current TA = 25°C, tp = 10 msIDM 158 A

Operating Junction and Storage Temperature

Range

TJ, TSTG −55 to

+175

°C

Source Current (Body Diode) IS23 A

Single Pulse Drain−to−Source Avalanche

Energy (IL = 5.3 Apk)

EAS 14 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case – Steady State (Note 1) RqJC 5.3 °C/W

Junction−to−Ambient – Steady State (Note 1) RqJA 43.4

MARKING

DIAGRAM

www.onsemi.com

V(BR)DSS RDS(ON) MAX ID MAX

60 V 22 mW @ 10 V 25 A

N−CHANNEL MOSFET

G (4)

S (1,2,3)

D (5−8)

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

XXXXXX = 24N06C

XXXXXX = (NVMFS024N06C) or

XXXXXX = 24N06W

XXXXXX = (NVMFWS024N06C)

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

NVMFS024N06C

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

ID = 250 mA, ref to 25°C27 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 60 V

TJ = 25°C 10

TJ = 125°C 250

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 20 mA2.0 4.0 V

Negative Threshold Temperature Coefficient VGS(TH)/TJID = 17 mA, ref to 25°C−7.8 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 3 A 18.3 22 mW

Forward Transconductance gFS VDS = 5 V, ID = 3 A 10 S

Gate Resistance RGTA = 25°C 0.8 W

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS = 0 V, f = 1 MHz, VDS = 30 V

333

Output Capacitance COSS 225

Reverse Transfer Capacitance CRSS 5.05

Total Gate Charge QG(TOT)

VGS = 10 V, VDS = 48 V; ID = 3 A

5.7

Threshold Gate Charge QG(TH) 1.3

Gate−to−Source Charge QGS 2.0

Gate−to−Drain Charge QGD 0.68

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)

Turn−On Delay Time td(ON)

VGS = 10 V, VDS = 48 V,

ID = 3 A, RG = 6.0 W

6.6

Rise Time tr1.3

Turn−Off Delay Time td(OFF) 10

Fall Time tf3.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 3 A

TJ = 25°C 0.8 1.2

TJ = 125°C 0.66

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

VDS = 30 V, IS = 3 A

Charge Time ta11

Discharge Time tb12

Reverse Recovery Charge QRR 11 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

NVMFS024N06C

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TYPICAL CHARACTERISTICS

0 0.5 1.0 2.0 2.5 3.0

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)

RDS(on), NORMALIZED DRAIN−TO−

SOURCE RESISTANCE

IDSS, LEAKAGE (nA)

3.6 V

4.5 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 25°C

ID = 3 A

TJ = 25°C

VGS = 10 V

ID = 3 A

TJ = 125°C

TJ = 85°C

TJ = 175°C

VGS = 10 V to 7 V

0 0.5 1.0 1.5 2.0 3.0

5.0 V

5 6 7 8 9 10 3 6 9 12 15 27

0.5

1.0

1.5

2.5

−50 −25 0 25 50 75 100 125 150 175

1.E−01

1.E+02

1.E+03

515 35 55

3.5 5.0

18 2421

25 45

4.0

VGS = 10 V

2.0

TJ = 150°C

TJ = 25°C

1.E+01

1.E+04

2.5

6.0 V

1.E+00

3.5

4.54.0 5.0 1.5 4.5

NVMFS024N06C

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total

Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)

C, CAPACITANCE (pF)

VGS, GATE−TO−SOURCE VOLTAGE (V)

t, TIME (ns)

IS, SOURCE CURRENT (A)

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS VDS = 48 V

ID = 3 A

TJ = 25°C

QGS QGD

VGS = 10 V

VDS = 48 V

ID = 3 A

td(off)

td(on)

TJ = 25°CTJ = −55°C

100

1000

010 30 60

0245

10 100

0.4 0.5 0.6 0.7 0.8 0.9

20 40 50 1 3

0.3

TJ = 125°C

VGS = 0 V

100

10 0.1

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Current vs. Time in

Avalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)

ID, DRAIN CURRENT (A)

IPEAK, (A)

RDS(on) Limit

Thermal Limit

Package Limit

1 ms

10 ms

TC = 25°C

VGS ≤ 10 V

Single Pulse

1 10 1000.1

100

0.1

10 ms

100 ms

100 ms & 1 sec

TJ(initial) = 100°C

TJ(initial) = 25°C

1E−06

100

1E−05 1E−04 1E−03 1E−02

NVMFS024N06C

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TYPICAL CHARACTERISTICS

0.1

0.000001 0.00001 0.0001 0.001 0.01 0.1 1

Figure 13. Thermal Response

t, PULSE TIME (s)

ZqJC, (°C/W)

Single Pulse

50% Duty Cycle

20%

10%

0.01

DEVICE ORDERING INFORMATION

Device Marking Package Shipping

†

NVMFS024N06CT1G 24N06C DFN5

(Pb−Free)

1500 / Tape & Reel

NVMFWS024N06CT1G 24N06W DFN5

(Pb−Free, Wettable Flanks)

1500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

M3.00 3.40

q0 −−−

3.80

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA

ISSUE N DATE 25 JUN 201

SCALE 2:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE

MOLD FLASH PROTRUSIONS OR GATE

BURRS.

XXXXXX = Specific Device Code

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

1234

TOP VIEW

SIDE VIEW

BOTTOM VIEW

E1 q

0.20 C

2 X

DIM MIN NOM

MILLIMETERS

A0.90 1.00

A1 0.00 −−−

b0.33 0.41

c0.23 0.28

D5.15

D1 4.70 4.90

D2 3.80 4.00

E6.15

E1 5.70 5.90

E2 3.45 3.65

e1.27 BSC

G0.51 0.575

K1.20 1.35

L0.51 0.575

L1 0.125 REF

0.10 C

DETAIL A

e/2

A0.10 B

0.05 cL

DETAIL A

4 X

SEATING

PLANE

GENERIC

MARKING DIAGRAM*

XXXXXX

AYWZZ

MAX

1.10

0.05

0.51

0.33

5.10

4.20

6.10

3.85

0.71

1.50

0.71

STYLE 1:

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.270

0.750

1.000

0.905

4.530

1.530

4.5600.495

3.200

1.330

0.965

PIN 5

(EXPOSED PAD)

STYLE 2:

PIN 1. ANODE

2. ANODE

3. ANODE

4. NO CONNECT

5. CATHODE

5.00 5.30

6.00 6.30

PITCH

DIMENSIONS: MILLIMETERS

RECOMMENDED

0.475

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some product

may not follow the Generic Marking.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

DESCRIPTION:

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

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DFN5 5x6, 1.27P (SO−8FL)

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